FAIRCHILD FGA120N30D

FGA120N30D
300V PDP IGBT
Features
Description
• High Current Capability
Employing Unified IGBT Technology, FGA120N30D provides
low conduction and switching loss. FGA120N30D offers the
optimum solution for PDP applications where low condution loss
is essential.
• Low saturation voltage: VCE(sat), Typ = [email protected] IC = 25A
• High Input Impedance
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
TC = 25°C unless otherwise noted
Description
FGA120N30D
Units
VCES
Collector-Emitter Voltage
300
V
VGES
Gate-Emitter Voltage
± 30
V
@ TC = 25°C
120
A
@ TC = 25°C
300
A
IC
Collector Current
ICM
Pulsed Collector Current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
PD
(Note 1)
@ TC = 100°C
10
A
40
A
Maximum Power Dissipation
@ TC = 25°C
290
W
Maximum Power Dissipation
@ TC = 100°C
116
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
°C
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Typ.
Max.
Units
RθJC(IGBT)
Symbol
Thermal Resistance, Junction-to-Case for IGBT
Parameter
--
0.43
°C/W
RθJC(DIODE)
Thermal Resistance, Junction-to-Case for Diode
--
1.56
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
©2006 Fairchild Semiconductor Corporation
FGA120N30D Rev. A
1
www.fairchildsemi.com
FGA120N30D 300V PDP IGBT
June 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA120N30D
FGA120N30D
TO-3P
--
--
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250µA
300
--
--
V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
--
0.6
--
V/°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
100
µA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
± 250
nA
2.5
4.0
5.0
V
IC = 25A, VGE = 15V
--
1.1
1.4
V
IC = 120A, VGE = 15V
--
1.9
--
V
IC = 120A, VGE = 15V,
TC = 125°C
--
2.0
--
V
--
2310
-
pF
VCE = 30V, VGE = 0V,
f = 1MHz
--
360
-
pF
--
100
-
pF
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 250uA, VCE = VGE
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
--
30
--
ns
tr
Rise Time
--
270
--
ns
td(off)
Turn-Off Delay Time
--
100
--
ns
tf
Fall Time
--
130
300
ns
Eon
Turn-On Switching Loss
--
0.17
--
mJ
Eoff
Turn-Off Switching Loss
--
0.56
--
mJ
Ets
Total Switching Loss
--
0.73
--
mJ
td(on)
Turn-On Delay Time
--
30
--
ns
tr
Rise Time
--
280
--
ns
td(off)
Turn-Off Delay Time
--
105
--
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
--
0.9
--
mJ
Ets
Total Switching Loss
--
1.08
--
mJ
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC = 200V, IC = 25A,
RG = 8.7Ω, VGE = 15V,
Resistive Load, TC = 25°C
VCC = 200V, IC = 25A,
RG = 8.7Ω, VGE = 15V,
Resistive Load, TC = 125°C
VCE = 200V, IC = 25A,
VGE = 15V
2
FGA120N30D Rev. A
--
180
--
ns
--
0.18
--
mJ
--
120
180
nC
--
15
22
nC
--
60
90
nC
www.fairchildsemi.com
FGA120N30D 300V PDP IGBT
Package Marking and Ordering Information
C
Symbol
= 25°C unless otherwise noted
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 10A
trr
Diode Reverse Recovery Time
IF = 10A
dI/dt = 200A/µs
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
3
FGA120N30D Rev. A
Min.
Typ.
Max.
Units
TC = 25°C
--
1.1
1.4
V
TC = 125°C
--
0.9
--
TC = 25°C
--
21
--
TC = 125°C
--
35
--
TC = 25°C
--
2.8
--
TC = 125°C
--
5.6
--
TC = 25°C
--
29.4
--
TC = 125°C
--
98
--
ns
A
nC
www.fairchildsemi.com
FGA120N30D 300V PDP IGBT
Electrical Characteristics of DIODE T
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
180
180
o
o
T C = 125 C
T C = 25 C
20V
15V
120
10V
12V
90
60
V G E =8V
15V
120
10V
90
V G E =8V
60
30
30
0
0
0
2
4
0
6
2
Collector-Em itter Voltage, V CE [V]
4
6
C ollector-E m itter V oltage, V C E [V ]
Figure3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer characteristics
150
200
C o m m o n E m itte r
V GE = 15V
TC =
120
C o m m o n E m itte r
V CE = 2 0V
100
o
25 C
TC =
Ic , Collector Current [A]
Collector Current, IC [A]
12V
20V
150
Collector Current, IC [A]
Collector Current, IC [A]
150
o
TC = 125 C
90
60
o
25 C
o
T C = 125 C
10
30
1
0
0 .0
0 .5
1 .0
1 .5
2 .0
2 .5
0
3 .0
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4
6
8
10
Figure 6. Saturation Voltage vs. VGE
6
2 .4
C o m m o n E m it t e r
o
TC = 25 C
[V]
C o m m o n E m itte r
V GE = 15V
12 0 A
5
CE
2 .0
Collector - Emitter Voltage, V
Collector-Emitter Voltage, VCE [V]
2
V C E , G a te T o E m itte r V o lta g e [V ]
C o llecto r-E m itte r V o lta g e , V C E [V ]
1 .6
50A
1 .2
25A
I C = 1 2.5 A
0 .8
4
3
120A
2
50A
25A
1
1 2 .5 A
0
0 .4
25
50
75
100
4
125
C ase Te m pera ture , T C [ C ]
4
FGA120N30D Rev. A
8
12
16
20
G a t e - E m it t e r V o lt a g e , V G E [ V ]
o
www.fairchildsemi.com
FGA120N30D 300V PDP IGBT
Typical Performance Characteristics
(Continued)
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Charaacteristics
6
5000
o
T C = 25 C
4000
Capacitance [pF]
Collector - Emitter Voltage, V
4
3
120A
2
50A
C oes
3000
C res
2000
25A
1000
1
1 2 .5 A
0
0
4
8
12
16
20
0.1
Figure 9. Gate Charge Characteristics
1000
Ic M A X (P ulsed)
50 µ s
o
T C = 25 C
Ic M A X (C ontinuous)
10
Collector Current, Ic [A]
12
30
10
Figure 10. SOA Characteristics
C om m on E m itter
RL = 8Ω
14
1
C ollector-Em itter V oltage, V C E [V ]
G a t e - E m it te r V o lta g e , V G E [V ]
Gate-Emitter Voltage, VGE [V]
C om m on E m itter
V G E = 0V , f = 1M H z
C ies
5
CE
[V]
C o m m o n E m itte r
o
TC = 125 C
V cc = 200V
8
6
4
100 µ s
100
1m s
D C O peration
10
S ingle N onrepetitive
o
P ulse Tc = 25 C
C urves m ust be derated
linearly w ith increase
in tem perature
1
2
0.1
0
0
30
60
90
120
0.1
150
G a te C h a rg e, Q g [n C ]
1
10
100
1000
C ollector - E m itter V o ltage, V C E [V ]
Figure 11. Turn-On Characteristics vs. Gate
Resistance
Figure 12. Turn-Off Characteristics vs. Gate
Resistance
1000
10 00
td (off)
Switching Time [ns]
Switching Time [ns]
tr
100
td(on)
C om m on Em itter
V C C = 200V, V G E = 15V
tf
1 00
C o m m o n E m itte r
V C C = 2 00 V , V G E = 15 V
I C = 25A
I C = 25A
o
T C = 25 C
o
T C = 25 C
o
T C = 125 C
o
T C = 12 5 C
10
10
0
10
20
30
40
0
50
20
30
40
50
G a te R e sista nce, R G [ Ω ]
Gate R esistance, R G [Ω ]
5
FGA120N30D Rev. A
10
www.fairchildsemi.com
FGA120N30D 300V PDP IGBT
Typical Performance Characteristics
(Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
Figure 14.Turn-Off Characteristics vs.
Collector Current
1000
C om m on E m itter
V CC = 200V, V GE = 15V
R G = 8.7 Ω
1000
o
T C = 25 C
Switching Time [ns]
Switching Time [ns]
tr
o
T C = 125 C
100
td(on)
tf
100
td(off)
C om m on Em itter
V C C = 200V,V G E = 15V
R G =8.7 Ω
o
T C = 25 C
o
T C = 125 C
10
10
0
20
40
60
80
100
0
120
20
Figure 15. Switching Loss vs. Gate Resistance
60
80
100
120
Figure 16. Switching Loss vs.
Collector Current
C om m on E m itter
V C C = 200V , V G E = 15V
I D = 25A
C om m on E m itter
V C C = 200V ,V G E = 15V
RG = 5Ω
10
o
E off
o
T C = 25 C
T C = 25 C
o
T C = 125 C
o
E off
Switching Loss [mJ]
Switching Loss [mJ]
40
C ollector C urrent, I C [A ]
C ollector C urrent, I C [A ]
1
E on
0.1
T C = 125 C
E on
1
0.1
0
10
20
30
40
50
0
G a te R e sista n ce , R G [ Ω ]
20
40
60
80
100
120
C o lle cto r C urre n t, I C [A ]
Figure 17. Turn-Off SOA Figure
1000
Collector Current, IC [A]
Safe O perating Area
o
V GE = 20V, T C = 100 C
100
10
1
10
100
1000
Collector-Emitter Voltage, V C E [V]
6
FGA120N30D Rev. A
www.fairchildsemi.com
FGA120N30D 300V PDP IGBT
Typical Performance Characteristics
FGA120N30D 300V PDP IGBT
Typical Performance Characteristics
(Continued)
Figure 18. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.05
Pdm
0.01
0.02
t1
0.01
t2
single pulse
1E-3
1E-5
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Figure 19. Forward Characteristics
Figure 20. Typical Reverse Recovery
Current
5
100
I F = 10A
o
10
Reverse Recovery Current , Irr [A]
Forward Current , IF [A]
T J = 125 C
o
T J = 25 C
1
o
T C = 25 C
o
T C = 125 C
0.1
0.0
0.5
1.0
1.5
2.0
o
T C = 25 C
4
3
2
1
0
100
2.5
Forw ard Voltage , V F [V]
500
di/dt [A/ µ s]
Figure 21. Typical Reverse Recovery Time
36
Reverse Recovery Time , trr [ns]
IF = 10A
o
Tc = 25 C
32
28
24
100
500
di/dt [A/µ s]
7
FGA120N30D Rev. A
www.fairchildsemi.com
TO-3P
15.60 ±0.20
3.80 ±0.20
+0.15
3.50 ±0.20
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
1.50 –0.05
16.50 ±0.30
9.60 ±0.20
19.90 ±0.20
13.90 ±0.20
ø3.20 ±0.10
4.80 ±0.20
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
8
FGA120N30D Rev. A
0.60 –0.05
www.fairchildsemi.com
FGA120N30D 300V PDP IGBT
Mechanical Dimensions
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™
FAST®
ActiveArray™
FASTr™
Bottomless™
FPS™
Build it Now™
FRFET™
CoolFET™
GlobalOptoisolator™
CROSSVOLT™
GTO™
DOME™
HiSeC™
EcoSPARK™
I2C™
2
E CMOS™
i-Lo™
ImpliedDisconnect™
EnSigna™
IntelliMAX™
FACT™
FACT Quiet Series™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
mSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
UltraFET®
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT
EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life support device
1. Life support devices or systems are devices or systems which,
or system whose failure to perform can be reasonably expected
(a) are intended for surgical implant into the body, or (b) support
to cause the failure of the life support device or system, or to
or sustain life, or (c) whose failure to perform when properly used
affect its safety or effectiveness.
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
9
FGA120N30D Rev. A
www.fairchildsemi.com
FGA120N30D 300V PDP IGBT
TRADEMARKS