FGH30N60LSD tm Features General Description • Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. • High Input Impedance • Low Conduction Loss Applications • Solar Inverters • UPS, Welder E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description FGH30N60LSD Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 25°C 60 A Collector Current @ TC = 100°C 30 A ICM (1) Pulsed Collector Current 90 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 150 A PD Maximum Power Dissipation @ TC = 25°C 480 W Maximum Power Dissipation @ TC = 100°C 192 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.26 °C/W RθJC(Diode) Thermal Resistance, Junction-to-Case -- 0.92 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ©2006 Fairchild Semiconductor Corporation FGH30N60LSD Rev. A1 1 www.fairchildsemi.com FGH30N60LSD August 2007 Device Marking Device Package Packaging Type FGH30N60LSD FGH30N60LSDTU TO-247 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V -- 0.6 -- V/°C Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250uA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±250 nA 4.0 5.5 7.0 V On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC = 30A, VGE = 15V -- 1.1 1.4 V IC = 30A, VGE = 15V, TC = 125°C -- 1.0 -- V IC = 60 A, VGE = 15V -- 1.3 -- V -- 3550 -- pF VCE = 30V, VGE = 0V, f = 1MHz -- 245 -- pF -- 90 -- pF 18 -- ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time -- tr Rise Time -- 46 -- ns td(off) Turn-Off Delay Time -- 250 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff td(on) VCC = 400 V, IC = 30A, RG = 6.8Ω, VGE = 15V, Inductive Load, TC = 25°C -- 1.3 2.0 us -- 1.1 -- mJ Turn-Off Switching Loss -- 21 -- mJ Turn-On Delay Time -- 17 -- ns tr Rise Time -- 45 -- ns td(off) Turn-Off Delay Time -- 270 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge Le Internal Emitter Inductance VCC = 400 V, IC = 30A, RG =6.8Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 600 V, IC = 30A, VGE = 15V Measured 5mm from PKG 2 FGH30N60LSD Rev. A1 -- 2.6 -- us -- 1.1 -- mJ -- 36 -- mJ -- 225 -- nC -- 30 -- nC -- 105 -- nC -- 7 -- nH www.fairchildsemi.com FGH30N60LSD Package Marking and Ordering Information Parameter TC = 25°C unless otherwise noted Min. Typ. Max Units VFM IF = 15A IF = 15A Conditions TC = 25 °C TC = 125 °C - 1.8 1.6 2.2 - V V IRM VR = 600V TC = 25 °C - - 100 µA trr IF =1A, di/dt = 100A/µs, VCC = 30V IF =15A, di/dt = 100A/µs, VCC = 390V TC = 25 °C TC = 25 °C - - 35 40 ns ns ta tb Qrr IF =15A, di/dt = 100A/µs, VCC = 390V TC = 25 °C TC = 25 °C TC = 25 °C - 18 13 27.5 - ns ns nC 3 FGH30N60LSD Rev. A1 www.fairchildsemi.com FGH30N60LSD Electrical Characteristics of the Diode FGH30N60LSD Typical Performance Characteristics Figure 1.Typical Output Characteristics Figure 2. Typical Saturation Voltage Characteristics 90 90 o 60 30 15V 12V 10V 8V 60 30 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 0 Figure 3. Typical Saturation Voltage Characteritics 4 90 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C o TC = 125 C 60 TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 1 2 3 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer characteristics 90 o TC = 125 C 60 30 30 0 0 0 1 2 Collector-Emitter Voltage, VCE [V] 0 3 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. Vge 20 1.4 Common Emitter VGE = 15V Common Emitter Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] VGE = 20V TC = 125 C 15V 12V 10V 8V Collector Current, IC [A] Collector Current, IC [A] o VGE = 20V TC = 25 C 60A 1.2 30A 1.0 IC = 15A 0.8 0.6 25 o T = 25 C C 16 12 8 4 60A 30A IC = 15A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 4 FGH30N60LSD Rev. A1 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com (Continued) Figure 7. Saturation Voltage vs. Vge 20 FGH30N60LSD Typical Performance Characteristics Figure 8. Capacitance characteristics 13000 10000 Common Emitter TC = 125 C Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o 12 8 30A 60A TC = 25 C Cres 4 IC = 15A 100 50 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 Figure 9. Gate Charge Characteristics 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteeristics 300 15 Common Emitter IC = 30A o 12 TC = 25 C Ic MAX (Pulsed) 100 Vcc = 100V 9 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o 1000 0 300V 200V 6 3 0 0 50 100 150 200 Gate Charge, Qg [nC] 10 1ms 1 Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linearly with increase in temperature DC Operation 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 200 Vcc = 400V load Current : peak of square wave 100 Switching Time [ns] 60 50 40 30 20 10 100µs Figure 12. Turn-On Characteristics vs. Gate Resistance 80 70 50µs Ic MAX (Continuous) 0.1 0.1 250 Figure 11. Load Current Vs. Frequency Load Current [A] Common Emitter VGE = 0V, f = 1MHz Coes tr Common Emitter VCC = 400V, VGE = 15V IC = 30A td(on) Duty cycle : 50% o Tc = 100 C Powe Dissipation = 192W 0 0.1 1 10 100 Frequency [kHz] o TC = 25 C o TC = 125 C 10 1000 0 20 30 40 50 Gate Resistance, RG [Ω] 5 FGH30N60LSD Rev. A1 10 www.fairchildsemi.com (Continued) Figure 13. Turn-Off Characteristics vs. Gate Resistance Figure 14. Turn-On Characteristics vs. Collector Current 500 3000 Common Emitter VGE = 15V, RG = 6.8Ω o TC = 25 C Switching Time [ns] Switching Time [ns] o tf 1000 Common Emitter VCC = 400V, VGE = 15V IC = 30A td(off) TC = 125 C 100 tr td(on) 10 o TC = 25 C o TC = 125 C 100 0 10 20 30 40 20 50 30 40 Figure 15. Turn-Off Characteristics vs. Collector Current 60 70 80 Figure 16. Switching Loss vs Gate Resistance 6000 500 Common Emitter VCC = 400V, VGE = 15V IC = 30A Switching Loss [mJ] tf Switching Time [ns] 50 Collector Current, IC [A] Gate Resistance, RG [Ω] 1000 Common Emitter VGE = 15V, RG = 6.8Ω o TC = 25 C o td(off) TC = 125 C o 100 TC = 25 C o Eoff TC = 125 C 10 Eon 100 20 30 40 50 60 70 1 80 Collector Current, IC [A] 5 10 15 20 25 30 35 40 45 50 Gate Resistance, RG [Ω] Figure 17.Switching Loss vs Collector Current Figure 18. Turn-Off Switching SOA Characteristics 200 100 100 Collector Current, IC [A] Switching Loss [mJ] Eoff 10 Eon 1 Common Emitter VGE = 15V, RG = 6.8Ω 10 o TC = 25 C Safe Operating Area o VGE = 15V, TC = 125 C o TC = 125 C 0.1 10 1 20 30 40 50 60 70 80 1 Collector Current, IC [A] 6 FGH30N60LSD Rev. A1 10 100 1000 Collector-Emitter Voltage, VCE [V] www.fairchildsemi.com FGH30N60LSD Typical Performance Characteristics FGH30N60LSD Figure 19. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.01 0.02 PDM t1 0.01 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] Figure 20. Typical Forward Voltage Drop 10 Figure 21. Typical Reverse Current 100 1E-4 REVERSE CURRENT, IR [A] FPRWARD CURRENT, IF [A] 1 10 o TC=125 C 1 o TC=75 C 1E-5 o TC = 125 C o 1E-6 TC = 75 C 1E-7 o TC = 25 C 1E-8 o TC=25 C 0.1 0.0 1E-9 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 FORWARD VOLTAGE, VF [V] 100 200 300 400 500 600 REVERSE VOLTAGE, VR [V] REVERSE RECOVERY TIME, trr [ns] Figure 22. Typical Reverse Recovery Time 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 100 IF = 15A o TC = 125 C o TC = 75 C o TC = 25 C 200 300 400 500 di/dt [A/µs] 7 FGH30N60LSD Rev. A1 www.fairchildsemi.com FGH30N60LSD Mechanical Dimensions TO-247AD (FKS PKG CODE 001) 8 FGH30N60LSD Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 9 FGH30N60LSD Rev. A1 www.fairchildsemi.com