FDB8860 tm N-Channel Logic Level PowerTrench® MOSFET 30V, 80A, 2.6mΩ Features Applications RDS(ON) = 1.9mΩ (Typ), VGS = 5V, ID = 80A 12V Automotive Load Control Qg(5) = 89nC (Typ), VGS = 5V Start / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Converters Qualified to AEC Q101 RoHS Compliant ©2008 Fairchild Semiconductor Corporation FDB8860 Rev A1 1 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET May 2008 Symbol VDSS Drain to Source Voltage Parameter Ratings 30 Units V VGS Gate to Source Voltage ±20 V Drain Current Continuous (VGS = 10V, TC < 163oC) 80 A 80 A Continuous (VGS = 5V, TC < 162oC) ID Continuous (VGS = 10V, TC = 25oC, with RθJA = 43oC/W) 31 A Figure 4 A Single Pulse Avalanche Energy (Note 1) 947 mJ Power Dissipation 254 W Derate above 25oC 1.7 W/oC -55 to +175 oC 0.59 oC/W Pulsed EAS PD TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient (Note 2) RθJA Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area 62 o 43 oC/W C/W Package Marking and Ordering Information Device Marking FDB8860 Device FDB8860 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 30 - - - V - 1 - - 250 ±100 nA V Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 24V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V - - VDS = VGS, ID = 250μA 1 1.7 3 ID = 80A, VGS = 10V - 1.6 2.3 ID = 80A, VGS = 5V - 1.9 2.6 ID = 80A, VGS = 4.5V - 2.1 2.7 ID = 80A, VGS = 10V, TJ = 175°C - 2.5 3.6 - 9460 12585 pF - 1710 2275 pF - 1050 1575 pF TJ = 150°C μA On Characteristics VGS(th) RDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance RG Gate Resistance f = 1MHz - 1.8 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V - 165 214 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 89 115 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 9.1 12 nC Qgs Gate to Source Gate Charge - 26 - nC Qgs2 Gate Charge Threshold to Plateau - 18 - nC Qgd Gate to Drain “Miller” Charge - 33 - nC FDB8860 Rev A1 VDS = 15V, VGS = 0V, f = 1MHz 2 VDD = 15V ID = 80A Ig = 1.0mA www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units ns Switching Characteristics t(on) Turn-On Time - - 340 td(on) Turn-On Delay Time - 14 - ns tr Turn-On Rise Time - 213 - ns td(off) Turn-Off Delay Time - 79 - ns tf Turn-Off Fall Time - 49 - ns toff Turn-Off Time - - 192 ns ISD = 80A - - 1.25 V ISD = 40A - - 1.0 V VDD = 15V, ID = 80A VGS = 5V, RGS = 1Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time ISD = 80A, dISD/dt = 100A/μs - - 43 ns Qrr Reverse Recovery Charge ISD = 80A, dISD/dt = 100A/μs - - 29 nC Notes: 1: Starting TJ = 25oC, L =0.47mH, IAS = 64A , VDD = 30V, VGS = 10V. 2: Pulse width = 100s This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDB8860 Rev A1 3 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted POWER DISSIPATION MULIPLIER 1.2 300 VGS = 10V ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE( oC) NORMALIZED THERMAL IMPEDANCE ZθJA 1 CURRENT LIMITED BY PACKAGE VGS = 5V 150 75 0 25 175 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) Figure 1. Normalized Power Dissipation vs Case Temperature 2 225 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 10 10 -1 0 10 1 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 3000 I(PK), PEAK CURRENT (A) TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK 1000 CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 SINGLE PULSE 50 -5 10 -4 10 -3 10 -2 10 t, PULSE WIDTH (s) -1 10 0 10 1 10 Figure 4. Peak Current Capability FDB8860 Rev A1 4 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1000 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT(A) 10us 100 100 100us 10 CURRENT LIMITED BY PACKAGE 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0.1 1 1ms 10ms SINGLE PULSE TJ = MAX RATED TC = 25oC 100ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE(V) 120 TJ = 175oC 80 TJ = 25oC TJ = -55oC 40 1.5 2.0 2.5 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 60 40 20 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 2.5 TJ = 25oC 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDB8860 Rev A1 0.2 0.4 0.6 0.8 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.0 Figure 8. Saturation Characteristics TJ = 175oC 4 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 0.0 3.0 1.5 3 VGS = 10V 80 3.5 PULSE DURATION = 80μs DUTY CYCLE=0.5% MAX 2.0 VGS = 3V VGS = 5V 0 4.0 3.5 10000 VGS = 4V 100 Figure 7. Transfer Characteristics ID = 40A 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) Figure 6. Unclamped Inductive Switching Capability VDD = 5V 1.0 STARTING TJ = 150oC NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 120 10 1 0.1 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 STARTING TJ = 25oC 60 Figure 5. Forward Bias Safe Operating Area 0 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1.6 1.4 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE( OC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1.10 VGS = VDS ID = 250μA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.4 1.05 1.0 1.00 0.8 0.6 0.95 0.4 0.2 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE( oC) 0.90 -80 200 VGS, GATE TO SOURCE VOLTAGE(V) Ciss 10000 Coss 500 0.1 f = 1MHz VGS = 0V Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 40 80 120 160 200 10 VDD = 15V 8 6 4 2 ID = 80A ID = 1A 0 0 20 40 60 80 100 120 140 160 180 Qg, GATE CHARGE (nC) Figure 13. Capacitance vs Drain to Source Voltage FDB8860 Rev A1 0 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 20000 1000 -40 TJ, JUNCTION TEMPERATURE( oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pF) ID = 1mA Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDB8860 Rev A1 7 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET TRADEMARKS