FAIRCHILD RB751S40_08

RB751S40
Schottky Barrier Diodes
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Low Forward Voltage Drop
Flat Lead, Surface Mount Device at 0.60mm Height
Extremely Small Outline Plastic Package SOD523F
Moisture Level Sensitivity 1
Pb-free Version and RoHS Compliant
Matte Tin (Sn) Lead Finish
Green Mold Compound
SOD-523F
Band Indicates Cathode*
Marking: 4B
Absolute Maximum Ratings* Ta=25qC unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
40
V
IF(AV)
Average Rectified Forward Current
30
mA
IFSM
Non-Repetitive Peak Forward Current
500
mA
TJ
Operating Junction Temperature Range
-55 to +125
qC
TSTG
Storage Temperature Range
-55 to +125
qC
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Unit
RTJA
Thermal Resistance, Junction to Ambient
500
qC/W
PD
Total Device Dissipation(TC=25qC)
200
mW
*Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics* Ta=25qC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
30
Units
V
BVR
Breakdown Voltage
IR = 500 PA
IR
Reverse Current
VR = 10 V
0.5
PA
VF
Forward Voltage
IF = 1mA
0.37
V
© 2007 Fairchild Semiconductor Corporation
RB751S40 Rev. 1.0
www.fairchildsemi.com
1
RB751S40 — Schottky Barrier Diodes
March 2008
RB751S40 — Schottky Barrier Diodes
Typical Performance Characteristics
Capacitance vs Reverse Bias Voltage
1.2
1.0
Capacitance [pF]
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
VR-Reverse Voltage [V]
Forward Voltage vs Temperature
101
IF - Forward Current [A]
100
10-1
10-2
10-3
-25°C
25°C
10-4
75°C
10-5
10-6
10-7
0.0
125°C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VF-Forward Voltage [V]
© 2007 Fairchild Semiconductor Corporation
RB751S40 Rev. 1.0
www.fairchildsemi.com
2
RB751S40 — Schottky Barrier Diodes
Typical Performance Characteristics
Power Derating Curve
PD - Power Dissipation [mW]
250
200
150
100
50
0
0
25
50
75
100
125
150
Temperature [°C]
Reverse Leakage Current vs Temperature
IR - Reverse Leakage Current [A]
10-3
10-4
125°C
10-5
75°C
10-6
10-7
25°C
10-8
-25°C
10-9
10-10
0
10
20
30
40
VR-Reverse Voltage[V]
© 2007 Fairchild Semiconductor Corporation
RB751S40 Rev. 1.0
www.fairchildsemi.com
3
RB751S40 — Schottky Barrier Diodes
Package Dimension
SOD-523F
© 2007 Fairchild Semiconductor Corporation
RB751S40 Rev. 1.0
www.fairchildsemi.com
4
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when properly used in accordance with instructions for use
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I30
© 2007 Fairchild Semiconductor Corporation
RB751S40 Rev. 1.0
www.fairchildsemi.com
5
RB751S40 Schottky Barrier Diodes
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