MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA02M8087MD RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the 806 to 869 MHz range. BLOCK DIAGRAM 2 3 4 1 FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V) • Pout>34dBm @ VDD=7.2V, Pin=16dBm Idq1=20mA(Vgg1adjust.),Idq2=300mA(Vgg2 adjust.) , @ VDD=7.2V, Pout=34dBm (Pin adjust.), • ηT>30% Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.) • IMD3<-26dBc @ VDD=7.2V, Pout (average) =31dBm (Pin adjust.) Two tone test at 1KHz separation Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.) • Broadband Frequency Range: 806-869MHz • Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm 5 6 1 RF Input (Pin) 2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg1） 3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg2） 4 Drain Voltage (VDD), Battery 5 RF Output (Pout) 6 RF Ground (Case) PACKAGE CODE: H46S RoHS COMPLIANT • RA02M8087MD-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA02M8087MD-101 Antistatic tray, 25 modules/tray RA02M8087MD MITSUBISHI ELECTRIC 1/7 31 Jan 2007 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANT RA02M8087MD MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT 9.2 V VDD Drain Voltage VGG<3.5V VGG1 Gate Voltage VDD<7.2V, Pin=0mW 4 V VGG2 Gate Voltage VDD<7.2V, Pin=0mW 4 V Pin Input Power 100 mW Pout Output Power f=806-869MHz, ZG=ZL=50Ω Tcase(OP) Tstg 5 W Operation Case Temperature Range -30 to +90 °C Storage Temperature Range -40 to +110 °C TYP MAX UNIT 869 MHz The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER f Frequency Range Pout Output Power ηT Total Efficiency nd 2fo 2 ρin Input VSWR IGG Gate Current Harmonic rd IMD3 3 Inter Modulation Distortion IMD5 5 Inter Modulation Distortion th GV — — CONDITIONS MIN 806 VDD=7.2V,Pin(Single Carrier)=+16dBm, Idq1=20mA(Vgg1 adjust.), Idq2=300mA(Vgg2 adjust.) VDD=7.2V,Pout (Single Carrier) =34dBm (,Pin adjust.), Idq1=20mA(Vgg1 adjust.), Idq2=300mA(Vgg2 adjust.) 34 dBm 30 % -30 dBc 5.8:1 — 1 VDD=7.2V,Pout (average)=31dBm(Pin adjust.), Idq1=20mA(Vgg1 adjust.), Idq2=300mA(Vgg2 adjust.) , Two tone test at 1KHz separation Gain Variation VDD=7.2V,Pout (Single Carrier)=34dBm(Pin adjust.), Across specified frequency range Idq1=20mA(Vgg1 adjust.), Idq2=300mA(Vgg2 adjust.) Stability Vdd=6.0/7.2/9.2V, Idq1=20mA(Vgg1 adjust), Idq2=300mA(Vgg2 adjust) , Po(Single Carrier)=15-34dBm(Pin control) LOAD VSWR=2:1(All Phase),Zg=50Ω Load VSWR Tolerance Vdd=9.2V, Pout(Single Carrier)=34dBm (Pin adjust.), LOAD VSWR=2:1(All Phase),Zg=50Ω, Idq1=20mA(Vgg1 adjust.@Vdd=7.2V), Idq2=300mA(Vgg2 adjust.@Vdd=7.2V) 0 mA -26 dBc -30 dBc 4 dB No parasitic oscillation — No degradation or destroy — All parameters, conditions, ratings, and limits are subject to change without notice. RA02M8087MD MITSUBISHI ELECTRIC 2/7 31 Jan 2007 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA02M8087MD RoHS COMPLIANT TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) RA02M8087MD IMD3,IMD5 vs. Po RA02M8087MD Effi vs. Po T c=+25deg.C, Vdd=7.2V f=806MHz, Idq 1st stager=20mA Idq Final Stage=300mA T c=+25deg.C, Vdd=7.2V f=806MHz, Idq 1st stager=20mA Idq Final Stage=300mA 0 50 Gp 40 35 IMD3,IMD5(dBc) Effi(%),Gp(dB) 45 Effi 30 25 20 15 10 -10 IMD3(Delta freq=1KHz) -20 IMD5(Delta freq=1KHz) -30 -40 -50 -60 5 0 -70 10 15 20 25 30 35 40 15 20 Po(single carrie r)(dBm) Effi vs. Po 45 Gp 40 35 IMD3,IMD5(dBc) Effi(%),Gp(dB) 40 35 40 35 40 35 40 0 50 Effi 30 25 20 15 10 -10 IMD3(Delta freq=1KHz) -20 IMD5(Delta freq=1KHz) -30 -40 -50 -60 5 0 -70 10 15 20 25 30 35 40 15 20 Po(single carrie r)(dBm) 25 30 Po(2tone average)(dBm) RA02M8087MD IMD3,IMD5 vs. Po RA02M8087MD Effi vs. Po T c=+25deg.C, Vdd=7.2V f=851MHz, Idq 1st stager=20mA Idq Final Stage=300mA T c=+25deg.C, Vdd=7.2V f=851MHz, Idq 1st stager=20mA Idq Final Stage=300mA 0 50 45 Gp 40 35 IMD3,IMD5(dBc) Effi(%),Gp(dB) 35 T c=+25deg.C, Vdd=7.2V f=824MHz, Idq 1st stager=20mA Idq Final Stage=300mA T c=+25deg.C, Vdd=7.2V f=824MHz, Idq 1st stager=20mA Idq Final Stage=300mA Effi 30 25 20 15 10 -10 IMD3(Delta freq=1KHz) -20 IMD5(Delta freq=1KHz) -30 -40 -50 -60 5 0 -70 10 15 20 25 30 35 40 15 20 Po(single carrie r)(dBm) 25 30 Po(2tone average)(dBm) RA02M8087MD IMD3,IMD5 vs. Po RA02M8087MD Effi vs. Po T c=+25deg.C, Vdd=7.2V f=869MHz, Idq 1st stager=20mA Idq Final Stage=300mA T c=+25deg.C, Vdd=7.2V f=869MHz, Idq 1st stager=20mA Idq Final Stage=300mA 0 45 Gp 40 35 Effi IMD3,IMD5(dBc) 50 Effi(%),Gp(dB) 30 RA02M8087MD IMD3,IMD5 vs. Po RA02M8087MD 30 25 20 15 10 -10 IMD3(Delta freq=1KHz) -20 IMD5(Delta freq=1KHz) -30 -40 -50 -60 5 0 -70 10 15 20 25 30 35 40 15 Po(single carrie r)(dBm) RA02M8087MD 25 Po(2tone average)(dBm) 20 25 30 Po(2tone average )(dBm) MITSUBISHI ELECTRIC 3/7 31 Jan 2007 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA02M8087MD RoHS COMPLIANT OUTLINE DRAWING (mm) 30±0.2 26.6±0.2 21.2±0.2 ⑤ 6±0.2 ⑥ 7.4±0.2 ④ 6±1 ① ② ③ 2-R1.5±0.1 10±0.2 (4.4) 6±0.2 (1.7) φ0.45±0.15 1.5±0.2 (5.4) 2.3±0.4 3.5±0.2 6.1±1 9.9±1 13.7±1 18.8±1 23.9±1 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) RA02M8087MD MITSUBISHI ELECTRIC 4/7 31 Jan 2007 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANT RA02M8087MD TEST BLOCK DIAGRAM (TWO TONE) TEST BLOCK DIAGRAM (SINGLE CARRIER) 1 RF Input (Pin) 2 Gate Voltage (VGG1) 3 Gate Voltage (VGG2) 4 Drain Voltage (VDD) 5 RF Output (Pout) 6 RF Ground (Case) RA02M8087MD MITSUBISHI ELECTRIC 5/7 31 Jan 2007 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANT RA02M8087MD EQUIVALENT CIRCUIT 2 3 4 5 1 6 1 RF Input (Pin) 2 Gate Voltage (VGG1) 3 Gate Voltage (VGG2) 4 Drain Voltage (VDD) 5 RF Output (Pout) 6 RF Ground (Case) RA02M8087MD MITSUBISHI ELECTRIC 6/7 31 Jan 2007 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANT RA02M8087MD Output Power Adjust.: Depending on linearity, the following two methods are recommended to adjust. the output power: a) Non-linear FM modulation: By the gate voltage (VGG). b) Linear modulation: By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module. b) Is the load impedance ZL=50Ω. c) Is the source impedance ZG=50Ω. Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA02M8087MD MITSUBISHI ELECTRIC 7/7 31 Jan 2007