GI1001 to GI1004 VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability • Hermetically sealed package • High surge capability 17031 Mechanical Data Case: Sintered glass case, DO-204AP Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 560 mg Parts Table Part Type differentiation Package GI1001 VRRM = 50 V DO-204AP ( G1) GI1002 VRRM = 100 V DO-204AP ( G1) GI1003 VRRM = 150 V DO-204AP ( G1) GI1004 VRRM = 200 V DO-204AP ( G1) Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Part Symbol Value Unit see electrical characteristics Test condition GI1001 VR = VRRM 50 V see electrical characteristics GI1002 VR = VRRM 100 V see electrical characteristics GI1003 VR = VRRM 150 V see electrical characteristics GI1004 VR = VRRM 200 V Maximum average forward rectified current 0.375 " (9.5 mm) lead length at TL = 75 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method), at TL = 75 °C IFSM 30 A TJ, TSTG - 55 to + 175 °C Operating junction and storage temperature range Document Number 86073 Rev. 2, 28-Jan-03 www.vishay.com 1 GI1001 to GI1004 VISHAY Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Symbol Value Unit - RθJA 65 K/W Typical thermal resistance 1), 2) junction to lead RθJL 20 K/W Typical thermal resistance junction to ambient 1), 2) Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Maximum instantaneous forward Max Unit IF = 1.0 A Symbol VF Typ. 0.975 V VR/> = VRRM, Tamb = 25 °C IR 2.0 µA µA voltage 1) Maximum reverse current VR/> = VRRM, Tamb = 100 °C IR 50 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 25 Typical junction capacitance VR = 4 V, f = 1 MHz CJ 1) ns 45 pF Pulse test: 300 µs pulse width, 1 % duty cycle Typical Characteristics (Tamb = 25 °C unless otherwise specified) Average Forward Rectified Current (A) 0.8 x 0.8 x 0.4" Thick Copper Heatsink (20 x 20 x 10mm) TL 1.0 0.375" (9.5mm) 0.5 Resistive or Inductive Load 8.3ms Single Half Sine-Wave (JEDEC Method) at TL = 75°C 25 20 15 10 5.0 0 0 0 25 50 75 100 125 150 175 Lead Temperature (°C) ggi1001_01 Figure 1. Forward Current Derating Curve www.vishay.com 2 Peak Forward Surge Current (A) 30 1.5 ggi1001_02 1 100 10 Number of Cycles at 60 HZ Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Document Number 86073 Rev. 2, 28-Jan-03 GI1001 to GI1004 VISHAY Vishay Semiconductors Instantaneous Forward Current (A) 50 10 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage (V) ggi1001_03 Figure 3. Typical Instantaneous Forward Characteristics Instantaneous Reverse Leakage Current (µA) 1,000 100 TJ = 125°C 10 TJ = 100°C 1 0.1 TJ = 25°C 0.01 20 0 ggi1001_04 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics 105 TJ = 25°C f = 1.0MHZ Vsig = 50MVp-p Junction Capacitance (pF) 90 75 60 45 30 15 0 0.1 1 10 100 Reverse Voltage (V) ggi1001_05 Figure 5. Typical Junction Capacitance Document Number 86073 Rev. 2, 28-Jan-03 www.vishay.com 3 GI1001 to GI1004 VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. 1.0 (25.4) MIN. 17030 www.vishay.com 4 Document Number 86073 Rev. 2, 28-Jan-03 GI1001 to GI1004 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 86073 Rev. 2, 28-Jan-03 www.vishay.com 5