GTM GSS4511

Pb Free Plating Product
ISSUED DATE :2005/08/29
REVISED DATE :2005/09/29B
N-CH BVDSS
35V
N-CH RDS(ON) 25m
N-CH ID
7.0A
P-CH BVDSS
-35V
N-CH RDS(ON) 40m
N-CH ID
-6.1A
G S S 4 5 11
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSS4511 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Performance
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0
0.40
0.19
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
3
ID @TA=25
Continuous Drain Current
3
ID @TA=70
Pulsed Drain Current
1
IDM
PD @TA=25
Total Power Dissipation
Linear Derating Factor
6.20
5.00
4.00
8
0.90
0.25
Ratings
N-channel P-channel
35
-35
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Unit
V
20
V
7
-6.1
A
5.7
-5
A
30
-30
A
20
2.0
0.016
Operating Junction and Storage Temperature Range
REF.
Tj, Tstg
-55 ~ +150
Symbol
Value
Rthj-a
62.5
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
GSS4511
3
Max.
Unit
/W
Page: 1/7
ISSUED DATE :2005/08/29
REVISED DATE :2005/09/29B
N-Channel Electrical Characteristics(Tj = 25
Parameter
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
35
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.02
-
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
gfs
-
9
-
S
VDS=10V, ID=7A
IGSS
-
-
100
nA
VGS=
-
-
1
uA
VDS=35V, VGS=0
-
-
25
uA
VDS=28V, VGS=0
-
18
25
-
29
37
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
20V
VGS=10V, ID=7A
VGS=4.5V, ID=5A
Total Gate Charge2
Qg
-
11
18
Gate-Source Charge
Qgs
-
3
-
Gate-Drain (“Miller”) Change
Qgd
-
6
-
Td(on)
-
12
-
Tr
-
7
-
Td(off)
-
22
-
Tf
-
6
-
Input Capacitance
Ciss
-
830
1330
Output Capacitance
Coss
-
150
-
Reverse Transfer Capacitance
Crss
-
110
-
Rg
-
1.2
1.8
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
IS=1.7A, VGS=0V
Reverse Recovery Time
Trr
-
18
-
ns
Reverse Recovery Charge
Qrr
-
12
-
nC
IS=7A, VGS=0V
dI/dt=100A/ s
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
nC
ID=7A
VDS=28V
VGS=4.5V
ns
VDS=18V
ID=1A
VGS=10V
RG=3.3
RD=18
pF
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
2
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
2
3. Surface mounted on 1 in copper pad of FR4 board; 135 /W when mounted on Min. copper pad.
GSS4511
Page: 2/7
ISSUED DATE :2005/08/29
REVISED DATE :2005/09/29B
P-Channel Electrical Characteristics(Tj = 25
Parameter
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-35
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
-0.02
-
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
gfs
-
9
-
S
VDS=-10V, ID=-6A
IGSS
-
-
100
nA
VGS=
-
-
-1
uA
VDS=-35V, VGS=0
-
-
-25
uA
VDS=-28V, VGS=0
-
32
40
-
50
60
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=-250uA
Reference to 25 , ID=-1mA
20V
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4A
Total Gate Charge2
Qg
-
10
16
Gate-Source Charge
Qgs
-
2
-
Gate-Drain (“Miller”) Change
Qgd
-
6
-
Td(on)
-
10
-
Tr
-
6
-
Td(off)
-
26
-
Tf
-
7
-
Input Capacitance
Ciss
-
690
1100
Output Capacitance
Coss
-
165
-
Reverse Transfer Capacitance
Crss
-
130
-
Rg
-
5.2
7.8
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
-1.2
V
IS=-1.7A, VGS=0V
Reverse Recovery Time
Trr
-
20
-
ns
Reverse Recovery Charge
Qrr
-
12
-
nC
IS=-6A, VGS=0V
dI/dt=100A/ s
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
nC
ID=-6A
VDS=-28V
VGS=-4.5V
ns
VDS=-18V
ID=-1A
VGS=-10V
RG=3.3
RD=18
pF
VGS=0V
VDS=-25V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
2
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
2
3. Surface mounted on 1 in copper pad of FR4 board; 135 /W when mounted on Min. copper pad.
GSS4511
Page: 3/7
ISSUED DATE :2005/08/29
REVISED DATE :2005/09/29B
Characteristics Curve N-Channel
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
GSS4511
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 4/7
ISSUED DATE :2005/08/29
REVISED DATE :2005/09/29B
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
T A =25
Single Pulse
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
GSS4511
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Page: 5/7
ISSUED DATE :2005/08/29
REVISED DATE :2005/09/29B
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
GSS4511
Page: 6/7
ISSUED DATE :2005/08/29
REVISED DATE :2005/09/29B
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
T A =25
Single Pulse
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSS4511
Page: 7/7