PZT2907A PNP Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 P b Lead(Pb)-Free SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Symbol VCEO VCBO VEBO IC(DC) PD Value -60 -60 -5.0 -600 1.5 Unit Vdc Vdc Vdc mAdc Junction Temperature Tj 150 C Storage, Temperature Tstg -55 to +150 C Total Device Disspation TA=25 C W Device Marking PZT2907A=2907A ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) V(BR)CEO -60 - Vdc Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0) V(BR)CBO -60 - Vdc Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0) V(BR)EBO -5.0 - Vdc Base-Emitter Cutoff Current (VCE= 60 Vdc, VBE =-3.0Vdc) IBEX - 20 nAdc Collector-Emitter Cutoff Current (VCE= -30 Vdc, VBE=-0.5 Vdc) ICEX - -50 nAdc Emitter-Base Cutoff Current (VEB= 3.0Vdc, IC =0) IEBO - 100 nAdc NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the collector lead min. 0.93 inches.2 WEITRON http://www.weitron.com.tw 1/4 Rev.A 26-Aug-05 PZT2907A ELECTRICALCHARACTERISTICS- Continued (T A = 25 C unless otherwise noted) C harac teris tic S ymbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (I C = -100 mAdc, VCE = -10 Vdc) (I C = -1.0 mAdc, VCE = -10 Vdc) (I C = -10 mAdc, VCE = -10 Vdc) (I C = -150 mAdc, VCE = -10 Vdc) (I C = -500 mAdc, VCE = -10 Vdc) h FE1 h FE2 h FE3 h FE4 h FE5 Collector-Emitter Saturation Voltages (I C = -150 mAdc, IB= -15 mAdc) (I C = -500 mAdc, IB= -50 mAdc) V CE(sat) Base-Emitter Saturation Voltages (I C = -150 mAdc, IB = -15 mAdc) (I C = -500 mAdc, IB = -50 mAdc) V BE( sat) - - 75 100 100 100 50 180 - 300 - - -0.2 -0.5 -0.4 -1.6 - - -1.3 -2.6 Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain- Bandwidth Product (I C = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) fT 5 200 - - MHz Output Capacitance (V CB = -10 Vdc, I E = 0, f = 1.0 MHz) Cc - - 8.0 pF Input Capacitance (V EB = -2.0 Vdc, I C = 0, f = 1.0 MHz) Ce - - 30 pF t on - - 45 td - - 10 tr - - 40 toff - - 100 ts - - 80 tf - - 30 SWITCHINGTIMES (T A = 25 C) Turn-On Time Delay Time (V CC = -30 Vdc, I C = -150 mAdc, I B1= -15 mAdc) Rise Time Turn-Off Time Storage Time (V CC = -6.0 Vdc, IC= -150 mAdc, I B1 = IB2 = -15 mAdc) Fall Time ns ns _ 300us, Duty Cycle < _ 2.0% 2. Pulse Test: Pulse Width < WEITRON http://www.weitron.com.tw 2/4 Rev.A 26-Aug-05 PZT2907A WEITRON http://www.weitron.com.tw 3/4 Rev.A 26-Aug-05 PZT2907A SOT-223 Outline Dimensions unit:mm A F DIM 4 S B 1 2 3 D L G J C H WEITRON http://www.weitron.com.tw M K 4/4 A B C D F G H J K L M S MILLIMETERS MIN MAX 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30 Rev.A 26-Aug-05