PH3075L N-channel TrenchMOS™ logic level FET Rev. 01 — 25 February 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features ■ Logic level threshold ■ 175 °C rated ■ Very low on-state resistance ■ Surface mounted package. 1.3 Applications ■ DC-to-DC converters ■ DC motor speed control. ■ General purpose power switching 1.4 Quick reference data ■ VDS ≤ 75 V ■ RDSon ≤ 28 mΩ ■ ID ≤ 30 A ■ Qgd = 9 nC (typ). 2. Pinning information Table 1: Pinning Pin Description 1, 2, 3 source 4 gate mb mounting base; connected to drain Simplified outline Symbol D mb G mbb076 1 2 3 4 SOT669 (LFPAK) S PH3075L Philips Semiconductors N-channel TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Type number PH3075L Package Name Description Version LFPAK plastic single-ended surface mounted package; 4 leads SOT669 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 175 °C - 75 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 75 V VGS gate-source voltage (DC) - ±15 V ID drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 - 30 A Tmb = 100 °C; VGS = 5 V; Figure 2 - 21 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 120 A Ptot total power dissipation Tmb = 25 °C; Figure 1 - 75 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode IS source (diode forward) current (DC) Tmb = 25 °C - 30 A ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 120 A - 89 mJ - 0.89 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy unclamped inductive load; ID = 30 A; VDD ≤ 75 V; RGS = 50 Ω; VGS = 10 V starting at Tj = 25 °C EDS(AL)R repetitive drain-source avalanche energy unclamped inductive load; ID = 3 A; VDD ≤ 75 V; RGS = 50 Ω; VGS = 10 V [1] [2] [1] Duty cycle is limited by the maximum junction temperature. [2] Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short bursts, not every switching cycle. 9397 750 14603 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 February 2005 2 of 12 PH3075L Philips Semiconductors N-channel TrenchMOS™ logic level FET 03aa16 120 03aa24 120 Ider Pder (%) (%) 80 80 40 40 0 0 0 50 100 150 Tmb (°C) 200 P tot P der = ----------------------- × 100 % P ° 0 50 100 150 200 Tmb (°C) ID I der = ------------------- × 100 % I ° tot ( 25 C) D ( 25 C) Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Normalized continuous drain current as a function of mounting base temperature 003aaa699 103 ID (A) Limit RDSon = VDS / ID 102 tp = 10 µs 100 µs 10 1 ms DC 10 ms 100 ms 1 1 102 10 VDS (V) 103 Tmb = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9397 750 14603 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 February 2005 3 of 12 PH3075L Philips Semiconductors N-channel TrenchMOS™ logic level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to mounting base Figure 4 Rth(j-mb) Min Typ Max Unit - - 2 K/W 003aaa700 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 δ= P 10-1 0.02 t tp single shot 10 T -2 10-6 tp T 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration 9397 750 14603 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 February 2005 4 of 12 PH3075L Philips Semiconductors N-channel TrenchMOS™ logic level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 75 - - V Tj = −55 °C 70 - - V Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage gate-source threshold voltage drain-source leakage current ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 °C 1 1.5 2 V Tj = 175 °C 0.5 - - V Tj = −55 °C - - 2.3 V Tj = 25 °C - - 1 µA Tj = 175 °C - - 500 µA - 2 100 nA Tj = 25 °C - 25 30 mΩ Tj = 175 °C - - 72 mΩ VGS = 4.5 V; ID = 15 A; Figure 6 and 8 - - 34 mΩ VGS = 10 V; ID = 15 A; Figure 6 and 8 - 23 28 mΩ ID = 25 A; VDD = 60 V; VGS = 5 V; Figure 11 - 19 - nC - 5 - nC - 9 - nC - 1550 2070 pF - 150 179 pF - 60 80 pF - 16 - ns VDS = 75 V; VGS = 0 V IGSS gate-source leakage current VGS = ±15 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 5 V; ID = 15 A; Figure 6 and 8 Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 Crss reverse transfer capacitance td(on) turn-on delay time tr rise time - 106 - ns td(off) turn-off delay time - 51 - ns tf fall time - 83 - ns VDD = 30 V; RL = 1.2 Ω; VGS = 5 V; RG = 10 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 15 A; VGS = 0 V; Figure 13 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs; VGS = −10 V; VR = 30 V 9397 750 14603 Product data sheet - 0.85 1.2 V - 100 - ns - 115 - nC © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 February 2005 5 of 12 PH3075L Philips Semiconductors N-channel TrenchMOS™ logic level FET 003aaa701 100 ID (A) 003aaa703 60 10 7 5 Label = VGS (V) 3.4 RDSon (mΩ) 3.6 3.8 4 5 10 50 75 4.2 4 40 3.8 50 3.6 30 3.4 25 3.2 20 3 0 2.8 2.6 0 2 4 6 8 Label is VGS (V) VDS (V) 10 10 Tj = 25 °C 0 20 40 60 ID (A) 80 Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values 003aaa702 60 ID (A) 003aaa704 3 a 40 2 20 1 Tj = 175 °C 0 0 1 2 Tj = 25 °C 3 4 5 0 -60 0 60 Tj = 25 °C and 175 °C; VDS > ID × RDSon 180 R DSon a = ---------------------------R DSon ( 25 °C) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 9397 750 14603 Product data sheet 120 Tj (°C) VGS (V) © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 February 2005 6 of 12 PH3075L Philips Semiconductors N-channel TrenchMOS™ logic level FET 03aa33 2.5 VGS(th) (V) 2 1.5 03aa36 10-1 ID (A) max 10-2 typ 10-3 min max 10-4 min 1 typ 10-5 0.5 0 -60 10-6 0 60 120 0 180 Tj (°C) 1 2 3 Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aaa707 5 2500 C (pF) VDD = 14 V VGS (V) VGS (V) VDD = 60 V 4 2000 3 1500 2 1000 1 500 003aaa705 Ciss Coss Crss 0 0 5 10 15 QG (nC) 20 ID = 25 A; VDD = 14 V and 60 V 0 -1 10 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Gate-source voltage as a function of gate charge; typical values Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 9397 750 14603 Product data sheet 1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 February 2005 7 of 12 PH3075L Philips Semiconductors N-channel TrenchMOS™ logic level FET 003aaa706 100 IS (A) 75 50 25 Tj = 175 °C 0 0 0.3 0.6 Tj = 25 °C 1.2 0.9 VSD (V) Tj = 25 °C and 175 °C; VGS = 0 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical value 9397 750 14603 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 February 2005 8 of 12 PH3075L Philips Semiconductors N-channel TrenchMOS™ logic level FET 7. Package outline Plastic single-ended surface mounted package (LFPAK); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-09-15 04-10-13 MO-235 Fig 14. Package outline SOT669 (LFPAK) 9397 750 14603 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 February 2005 9 of 12 PH3075L Philips Semiconductors N-channel TrenchMOS™ logic level FET 8. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PH3075L_1 20050225 Product data sheet - - 9397 750 14603 Product data sheet 9397 750 14603 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 February 2005 10 of 12 PH3075L Philips Semiconductors N-channel TrenchMOS™ logic level FET 9. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14603 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 February 2005 11 of 12 PH3075L Philips Semiconductors N-channel TrenchMOS™ logic level FET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 25 February 2005 Document number: 9397 750 14603 Published in The Netherlands