ADVANCEDPHOTONIX PDB-V110

Blue Enhanced Photovoltaic Silicon Photodiode
PDB-V110
.084 [2.13]
.076 [1.93]
±.005 [0.13]
.053 [1.35]
PACKAGE DIMENSIONS
INCH
[mm]
PACKAGE
DIMENSIONS
INCH
[mm]
ANODE INDEX
2X Ø.017 [0.43]
ANODE
120°
VIEWING
ANGLE
.657 [16.69]
.643 [16.33]
.484 [12.29]
CATHODE
.596 [15.14]
.584 [14.83]
2X .50 [12.7]
CHIP DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
.005 [0.13] MAX
EPOXY ABOVE PACKAGE
.408 [10.36]
CERAMIC PACKAGE
.402 [10.21]
CERAMIC PACKAGE
.371 [9.42] ACTIVE AREA
.391 [9.93] ACTIVE AREA
DESCRIPTION
APPLICATIONS
The PDB-V110 is a blue enhanced PIN silicon
photodiode in a photovoltaic mode, packaged in a
ceramic package.
• Instrumentation
• Industrial
• Medical
SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
0.10
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
ISC
ID
RSH
CJ
lrange
R
VBR
NEP
tr
CHARACTERISTIC
Short Circuit Current
Dark Current
Shunt Resistance
Junction Capacitance
Spectral Application Range
Responsivity
Breakdown Voltage
Noise Equivalent Power
Response Time**
TEST CONDITIONS
H = 100 fc, 2850 K
VR = 10 mV
VR = 10 mV
VR = 0 V, f = 1 MHz
Spot Scan
l= 450 nm V, VR = 0 V
I = 10 μA
VR = 0V @ l=Peak
RL = 50 Ω,VR = 0 V
RL = 50 Ω,VR = 10 V
MIN
0.9
30
350
0.15
20
TYP
1.2
200
50
10000
0.17
30
2X10-14
190
13
MAX
333
12000
1100
UNITS
mA
pA
MW
pF
nm
A/W
V
W/ √ Hz
nS
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
1150
1100
Wavelength (nm)
1050
0.00
250
* 1/16 inch from case for 3 seconds max.
0.20
950
°C
1000
+240
0.30
900
+60
0.40
850
Soldering Temperature*
-20
°C
°C
800
TS
+80
0.50
750
Operating Temperature
-20
0.60
700
TO
V
650
Storage Temperature
75
600
TSTG
UNITS
550
Reverse Voltage
MAX
500
VBR
MIN
300
PARAMETER
Responsivity (A/W)
SYMBOL
0.70
450
Low noise
Blue enhanced
High shunt resistance
High response
400
•
•
•
•
350
FEATURES