GaAlAs High power IR LED Emitters PDI-E813 PACKAGE DIMENSIONS INCH [mm] .257 [6.5] .223 [5.7] .045 [1.1] .030 [0.8] .047 [1.2] .035 [0.9] CL .015 [0.38] MAX WINDOW CAP (WELDED) HEADER Ø.019 [0.5] TYP 45° CL Ø.188 [4.8] CL Ø.180 [4.6] CATHODE .100 [2.54] CL ANODE & CASE Ø.215 [5.5] Ø.207 [5.3] 880 nm LED CHIP .028 [0.7] MAX 2X 1.000 [25.4] .214 [5.4] .192 [4.9] .019 [0.48] CATHODE TO-46 CAN PACKAGE CHIP DIMENSIONS INCH [mm] FEATURES DESCRIPTION APPLICATIONS • High output power • High reliability • Medium emission angle The PDI-E813 is a high power GaAlAs infrared emitter, packaged in a hermetic TO-46 metal header with a dome window glass. • Photoelectric switches • Infrared sources • Optical readers ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL PARAMETER MIN MAX UNITS Pd Power Dissipation 360 mW If Continuous Forward Current 180 mA Ip Peak Forward Current 3.0 A Vr Reverse Voltage 3 V TSTG Storage Temperature -55 +125 TO Operating Temperature -55 +125 °C °C TS Soldering Temperature* +240 °C * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL Po Vf Ir lp Δl Rd tr tf CHARACTERISTIC Output Power Forward Voltage Reverse current Peak Wavelength Spectral Halfwidth Dynamic Resistance Rise Time Fall Time TEST CONDITIONS If = 100 mA If = 100 mA Vr = -3V If = 50 mA If = 50 mA If = 100mA If = 20 mA If = 20 mA MIN 7.0 865 TYP 15 1.5 880 80 1.2 0.6 0.5 MAX 1.9 10 895 UNITS mW V uA nm nm Ohms uS uS Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com