PBRP113ZT PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 16 January 2008 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ZT. 1.2 Features n 800 mA repetitive peak output current n High current gain hFE n Built-in bias resistors n Simplifies circuit design n Low collector-emitter saturation voltage VCEsat n Reduces component count n Reduces pick and place costs n ±10 % resistor ratio tolerance 1.3 Applications n Digital application in automotive and industrial segments n Medium current peripheral driver n Switching loads 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VCEO collector-emitter voltage open base Min Typ Max Unit - - −40 V [1][2] - - −600 mA [3] - - −800 mA kΩ IO output current IORM repetitive peak output current tp ≤ 1 ms; δ ≤ 0.33 R1 bias resistor 1 (input) 0.7 1 1.3 R2/R1 bias resistor ratio 9 10 11 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm2. [2] Device mounted on a ceramic PCB, Al2O3, standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PBRP113ZT NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ 2. Pinning information Table 2. Pinning Pin Description 1 input (base) 2 GND (emitter) 3 Simplified outline Symbol 3 3 R1 output (collector) 1 1 2 R2 2 sym003 3. Ordering information Table 3. Ordering information Type number PBRP113ZT Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PBRP113ZT *7M [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −40 V VCEO collector-emitter voltage open base - −40 V VEBO emitter-base voltage open collector - −5 V VI input voltage - +5 V positive - −10 V [1][2] - −600 mA [3] - −800 mA negative IO IORM output current repetitive peak output current tp ≤ 1 ms; δ ≤ 0.33 PBRP113ZT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 16 January 2008 2 of 12 PBRP113ZT NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Ptot total power dissipation Tamb ≤ 25 °C Min Max Unit [3] - 250 mW [1] - 370 mW [2] - 570 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [2] Device mounted on a ceramic PCB, Al2O3, standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 006aaa998 600 (1) Ptot (mW) 400 (2) (3) 200 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3 standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves for SOT23 (TO-236AB) PBRP113ZT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 16 January 2008 3 of 12 PBRP113ZT NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - - 500 K/W [2] - - 338 K/W [3] - - 219 K/W - - 105 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aab000 103 δ=1 Zth(j-a) (K/W) 0.75 0.50 102 0.33 0.20 0.10 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB); typical values PBRP113ZT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 16 January 2008 4 of 12 PBRP113ZT NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ 006aab001 103 Zth(j-a) (K/W) δ=1 102 0.75 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB); typical values 006aab002 103 Zth(j-a) (K/W) δ=1 102 0.75 0.50 0.33 0.20 0.10 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3 standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB); typical values PBRP113ZT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 16 January 2008 5 of 12 PBRP113ZT NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −30 V; IE = 0 A - - −100 nA ICEO collector-emitter cut-off VCE = −30 V; current IB = 0 A - - −0.5 µA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −0.8 mA hFE DC current gain VCE = −5 V; IC = −50 mA 190 270 - VCEsat collector-emitter saturation voltage VCE = −5 V; IC = −300 mA [1] 230 320 - VCE = −5 V; IC = −600 mA [1] 190 270 - IC = −50 mA; IB = −2.5 mA - −35 −45 mV IC = −200 mA; IB = −10 mA - −70 −100 mV IC = −500 mA; IB = −10 mA [1] - −200 −300 mV IC = −600 mA; IB = −6 mA [1] - −450 −750 mV VI(off) off-state input voltage VCE = −5 V; IC = −100 µA −0.3 −0.5 −1 V VI(on) on-state input voltage VCE = −0.3 V; IC = −20 mA −0.4 −0.7 −1.4 V R1 bias resistor 1 (input) 0.7 1 1.3 kΩ R2/R1 bias resistor ratio 9 10 11 Cc collector capacitance - 11 - [1] VCB = −10 V; IE = ie = 0 A; f = 1 MHz Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBRP113ZT_1 Product data sheet pF © NXP B.V. 2008. All rights reserved. Rev. 01 — 16 January 2008 6 of 12 PBRP113ZT NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ 006aab079 103 006aab080 −10−1 (1) (2) hFE (3) VCEsat (V) 102 (1) 10 (2) (3) 1 −10−1 −1 −10 −102 −103 −10−2 −1 −10 −103 −102 IC (mA) IC (mA) VCE = −5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 5. DC current gain as a function of collector current; typical values 006aab081 −1 Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values 006aab082 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (1) (2) (3) (2) (3) −10−2 −1 −10 −103 −102 −10−2 −1 IC (mA) −103 −102 IC (mA) IC/IB = 50 IC/IB = 100 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values PBRP113ZT_1 Product data sheet −10 © NXP B.V. 2008. All rights reserved. Rev. 01 — 16 January 2008 7 of 12 PBRP113ZT NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ 006aab083 −10 006aab084 −10 VI(on) (V) VI(off) (V) −1 −1 (1) (1) (2) (2) (3) (3) −10−1 −10−1 −1 −10 −102 −10−1 −10−1 −103 −1 −10 IC (mA) −102 IC (mA) VCE = −0.3 V VCE = −5 V (1) Tamb = −40 °C (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 9. On-state input voltage as a function of collector current; typical values Fig 10. Off-state input voltage as a function of collector current; typical values 8. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 Dimensions in mm 0.48 0.38 0.15 0.09 04-11-04 Fig 11. Package outline SOT23 (TO-236AB) PBRP113ZT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 16 January 2008 8 of 12 PBRP113ZT NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBRP113ZT [1] Package Description SOT23 Packing quantity 4 mm pitch, 8 mm tape and reel 3000 10000 -215 -235 For further information and the availability of packing methods, see Section 13. 10. Soldering 2.90 2.50 0.85 2 1 solder lands 1.30 3.00 2.70 0.85 solder resist solder paste 3 occupied area 0.60 (3x) Dimensions in mm 0.50 (3x) 0.60 (3x) 1.00 3.30 sot023 Fig 12. Reflow soldering footprint SOT23 (TO-236AB) 3.40 1.20 (2x) solder lands solder resist occupied area 2 1 4.60 4.00 1.20 3 Dimensions in mm 2.80 preferred transport direction during soldering 4.50 sot023 Fig 13. Wave soldering footprint SOT23 (TO-236AB) PBRP113ZT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 16 January 2008 9 of 12 PBRP113ZT NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBRP113ZT_1 20080116 Product data sheet - - PBRP113ZT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 16 January 2008 10 of 12 PBRP113ZT NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] PBRP113ZT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 16 January 2008 11 of 12 PBRP113ZT NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 January 2008 Document identifier: PBRP113ZT_1