PBSS5160K 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 02 — 30 June 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT346 (SC-59A) Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4160K. 1.2 Features ■ ■ ■ ■ ■ Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications ■ ■ ■ ■ ■ High voltage DC-to-DC conversion High voltage MOSFET gate driving High voltage motor control High voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions VCEO collector-emitter voltage open base [1] IC collector current (DC) ICM peak collector current single pulse; tp ≤ 1 ms RCEsat collector-emitter saturation resistance IC = −1 A; IB = −100 mA [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] Min Typ Max Unit - - −60 V - - −1 A - - −2 A - 255 340 mΩ PBSS5160K Philips Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2: Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Symbol 3 3 1 1 2 2 sym013 3. Ordering information Table 3: Ordering information Type number Package Name Description Version PBSS5160K SC-59A plastic surface mounted package; 3 leads SOT346 4. Marking Table 4: Marking codes Type number Marking code PBSS5160K XA 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VCBO Min Max Unit collector-base voltage open emitter - −80 V VCEO collector-emitter voltage open base - −60 V VEBO emitter-base voltage open collector IC Conditions collector current (DC) - −5 V [1] - −0.7 A [2] - −0.86 A [3] single pulse; tp ≤ 1 ms ICM peak collector current IB base current (DC) IBM peak base current Ptot total power dissipation Tamb ≤ 25 °C single pulse; tp ≤ 1 ms 9397 750 15185 Product data sheet - −1 A - −2 A - −300 mA - −1 A [1] - 250 mW [2] - 350 mW [3] - 425 mW © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 30 June 2005 2 of 14 PBSS5160K Philips Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa497 0.5 Ptot (W) (1) 0.4 (2) 0.3 (3) 0.2 0.1 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves 9397 750 15185 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 30 June 2005 3 of 14 PBSS5160K Philips Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-sp) Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 500 K/W [2] - - 357 K/W [3] - - 294 K/W - - 150 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa498 103 δ=1 Zth(j-a) (K/W) 0.50 102 0.75 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 15185 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 30 June 2005 4 of 14 PBSS5160K Philips Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 006aaa499 103 δ=1 Zth(j-a) (K/W) 0.75 102 0.50 0.20 0.33 0.10 0.05 10 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa500 103 Zth(j-a) (K/W) δ=1 102 0.50 0.75 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 15185 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 30 June 2005 5 of 14 PBSS5160K Philips Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −60 V; IE = 0 A - - −100 nA VCB = −60 V; IE = 0 A; Tj = 150 °C - - −50 µA - - −100 nA - - −100 nA 200 350 - 150 250 - ICES collector-emitter cut-off VCE = −60 V; VBE = 0 V current IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A hFE DC current gain VCE = −5 V; IC = −1 mA VCEsat collector-emitter saturation voltage VCE = −5 V; IC = −500 mA [1] VCE = −5 V; IC = −1 A [1] IC = −100 mA; IB = −1 mA IC = −500 mA; IB = −50 mA IC = −1 A; IB = −100 mA 160 - −110 −175 mV - −135 −180 mV - −255 −340 mV - −0.95 −1.1 V - 255 mΩ VBEsat base-emitter saturation IC = −1 A; IB = −50 mA voltage RCEsat collector-emitter saturation resistance IC = −1 A; IB = −100 mA VBEon base-emitter turn-on voltage IC = −1 A; VCE = −5 V - −0.82 −0.9 V td delay time - 11 - ns tr rise time IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA - 30 - ns ton turn-on time - 41 - ns ts storage time - 205 - ns tf fall time - 55 - ns toff turn-off time - 260 - ns fT transition frequency VCE = −10 V; IC = −50 mA; f = 100 MHz 150 185 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 9 15 pF [1] [1] 340 Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 9397 750 15185 Product data sheet [1] 100 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 30 June 2005 6 of 14 PBSS5160K Philips Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 006aaa474 600 (1) 006aaa476 −1.0 VBE (V) hFE −0.8 400 (1) (2) (2) −0.6 (3) 200 (3) −0.4 0 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −5 V −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −5 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 100 °C Fig 5. DC current gain as a function of collector current; typical values 006aaa475 −1 Fig 6. Base-emitter voltage as a function of collector current; typical values 006aaa480 −1 VCEsat (mV) VCEsat (V) −10−1 −10−1 (1) (1) (2) (3) (2) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values 9397 750 15185 Product data sheet −10 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 30 June 2005 7 of 14 PBSS5160K Philips Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 006aaa477 −1.1 VBEsat (V) 006aaa479 103 RCEsat (Ω) −0.9 102 (1) −0.7 (2) 10 −0.5 (1) (2) (3) (3) 1 −0.3 −0.1 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−1 −10−1 −1 IC/IB = 20 IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = −55 °C Fig 9. Base-emitter saturation voltage as a function of collector current; typical values 006aaa478 −2.0 IB (mA) = −35.0 −31.5 −28.0 −24.5 −21.0 IC (A) −1.6 −10 −102 −103 −104 IC (mA) Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values 006aaa481 103 RCEsat (Ω) −17.5 −14.0 102 −10.5 −1.2 −7.0 (1) (2) (3) 10 −0.8 −3.5 1 −0.4 0.0 0 −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 11. Collector current as a function of collector-emitter voltage; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values 9397 750 15185 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 30 June 2005 8 of 14 PBSS5160K Philips Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω Fig 14. Test circuit for switching times 9397 750 15185 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 30 June 2005 9 of 14 PBSS5160K Philips Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 9. Package outline 1.3 1.0 3.1 2.7 3 0.6 0.2 3.0 1.7 2.5 1.3 1 2 1.9 0.50 0.35 Dimensions in mm 0.26 0.10 04-11-11 Fig 15. Package outline SOT346 (SC-59A) 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package PBSS5160K [1] SOT346 Description 4 mm pitch, 8 mm tape and reel 3000 10000 -115 -135 For further information and the availability of packing methods, see Section 17. 9397 750 15185 Product data sheet Packing quantity © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 30 June 2005 10 of 14 PBSS5160K Philips Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 11. Soldering 3.30 1.00 0.70 (3x) 0.60 (3x) solder lands 0.70 (3x) solder resist 3 0.95 occupied area 3.40 1.55 3.15 0.95 1 solder paste 2 MSA440 1.20 2.60 2.90 Dimensions in mm Fig 16. Reflow soldering footprint 4.70 2.80 solder lands solder resist occupied area 3 5.20 4.60 1.20 1 2 preferred transport direction during soldering 1.20 (2x) 3.40 MSA420 Dimensions in mm Fig 17. Wave soldering footprint 9397 750 15185 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 30 June 2005 11 of 14 PBSS5160K Philips Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 12. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBSS5160K_2 20050630 Product data sheet - 9397 750 15185 PBSS5160K_1 Modifications: PBSS5160K_1 • • • • • • • • Product status changed Table 7: Switching time parameters td, tr, ton, ts, tf and toff added Figure 13 “BISS transistor switching time definition”: added Figure 14 “Test circuit for switching times”: added Section 10 “Packing information”: added Section 11 “Soldering”: added Section 16 “Trademarks”: added Table 9: Data sheet status of PBSS5160K_1 amended to ‘Objective data sheet’ 20040624 Objective data sheet - 9397 750 15185 Product data sheet 9397 750 12705 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 30 June 2005 12 of 14 PBSS5160K Philips Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 13. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 16. Trademarks 15. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 17. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 15185 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 30 June 2005 13 of 14 PBSS5160K Philips Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 18. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 30 June 2005 Document number: 9397 750 15185 Published in The Netherlands