FREESCALE MHW9182CN

Freescale Semiconductor
Technical Data
Document Number: MHW9182CN
Rev. 4, 10/2006
CATV Amplifier Module
Features
• Specified for 110 - and 152 - Channel Loading
• Excellent Distortion Performance
• Superior Gain, Return Loss and DC Current Stability over Temperature
• Silicon Bipolar Transistor Technology
• Unconditionally Stable Under All Load Conditions
Applications
• CATV Systems Operating in the 40 to 1000 MHz Frequency Range
• Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
• Driver Amplifier in Linear General Purpose Applications
• Output Stage Amplifier on Applications Requiring Low Power Dissipation
Description
• 24 Vdc Supply, 40 to 1000 MHz, CATV Forward Amplifier Module
• Replaced MHW9182C. There are no form, fit or function changes with this
part replacement.
• RoHS Compliant
MHW9182CN
1000 MHz
19.4 dB GAIN
152 - CHANNEL
CATV AMPLIFIER MODULE
CASE 1302 - 01, STYLE 1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
RF Voltage Input (Single Tone)
Vin
+70
dBmV
DC Supply Voltage
VCC
+28
Vdc
Operating Case Temperature Range
TC
- 20 to +100
°C
Storage Temperature Range
Tstg
- 40 to +100
°C
Table 2. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
Characteristic
Frequency Range
Symbol
Min
Typ
Max
Unit
BW
40
—
1000
MHz
Power Gain
50 MHz
1000 MHz
Gp
18
18.7
18.5
19.4
19
20.7
dB
Slope
40 - 1000 MHz
S
0.4
0.9
1.4
dB
GF
—
0.4
0.8
dB
20
—
—
—
—
0.006
dB
dB/MHz
—
—
- 70
- 69
- 63
- 63
Gain Flatness (40 - 1000 MHz, Peak to Valley)
Return Loss — Input/Output (Zo = 75 Ohms)
@ 40 MHz
@ f > 40 MHz (Derate)
Composite Second Order
(Vout = + 40 dBmV/ch., Worst Case)
(Vout = + 38 dBmV/ch., Worst Case)
dBc
110 - Channel FLAT
152 - Channel FLAT
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
IRL/ORL
CSO110
CSO152
MHW9182CN
1
Table 2. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) (continued)
Characteristic
Cross Modulation Distortion @ Ch 2
(Vout = + 40 dBmV/ch., FM = 55 MHz)
(Vout = + 38 dBmV/ch., FM = 55 MHz)
Composite Triple Beat
(Vout = + 40 dBmV/ch., Worst Case)
(Vout = + 38 dBmV/ch., Worst Case)
Noise Figure
DC Current (VDC = 24 V, TC = 30°C)
Symbol
Min
Typ
Max
Unit
110 - Channel FLAT
152 - Channel FLAT
XMD110
XMD152
—
—
- 66
- 65
- 64
- 61
110 - Channel FLAT
152 - Channel FLAT
CTB110
CTB152
—
—
- 68
- 64
- 66
- 61
NF
—
—
—
—
4.0
4.5
5.5
6.0
5.0
—
—
7.5
dB
IDC
180
210
240
mA
dBc
dBc
50 MHz
550 MHz
860 MHz
1000 MHz
MHW9182CN
2
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
A
S
B
A
Z
0.010
M
T F
M
A
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
M
V
J
F
Q
2X
R
DIM
A
B
C
D
E
F
G
J
K
L
N
P
Q
R
S
U
V
W
X
Y
Z
F
2X 6−32UNC−2B
L
2X
0.010
U
Z T A
M
M
E
1 2
3
5
7 8 9
C
N
K
E
T
4X
7X
Y
2X
0.010
M
Z
T A
MILLIMETERS
MIN
MAX
−−−− 45.085
−−−− 27.559
−−−− 21.336
0.381 0.533
11.811 12.954
7.620 8.255
2.540 BSC
3.962 BSC
8.001
9.017
25.400 BSC
4.191 BSC
2.540 BSC
3.759 4.267
−−−− 15.240
38.100 BSC
5.080 BSC
−−− 6.350
11.049 −−−
10.160 BSC
3.861 4.140
0.229 0.279
Z
X
G
W
INCHES
MIN
MAX
−−−− 1.775
−−−− 1.085
−−−− 0.840
0.015
0.021
0.465
0.510
0.300
0.325
0.100 BSC
0.156 BSC
0.315
0.355
1.000 BSC
0.165 BSC
0.100 BSC
0.148
0.168
−−−− 0.600
1.500 BSC
0.200 BSC
−−− 0.250
−−−−
0.435
0.400 BSC
0.152
0.163
0.009
0.011
P
D
0.02
M
X
T
A
M
X
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
RF INPUT
GROUND
GROUND
DELETED
VDC
DELETED
GROUND
GROUND
RF OUTPUT
CASE 1302 - 01
ISSUE E
MHW9182CN
RF Device Data
Freescale Semiconductor
3
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
4
Oct. 2006
Description
•
Added missing minus sign to CSO110 Typ value, p. 1
MHW9182CN
4
RF Device Data
Freescale Semiconductor
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MHW9182CN
Document
Number:
RF
Device
DataMHW9182CN
Rev. 4, 10/2006
Freescale
Semiconductor
5