SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V) • Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±12 V ID −1.3 IDP (Note 2) −2.6 PD (Note 1) 300 mW DC Drain current Pulse Drain power dissipation A Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C JEDEC ― Using continuously under heavy loads (e.g. the application of JEITA ― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2J1D reliability significantly even if the operating conditions (i.e. Weight: 6.8 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Note 1: Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6) Fig: 1. Note 2: The pulse width limited by max channel temperature. Marking 6 Equivalent Circuit 5 4 6 5 Fig 1: 25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6 4 0.8 mm 0.4 mm KDD 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM6J08FU Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current IGSS Drain-Source breakdown voltage Drain Cut-off current Forward transfer admittance Drain-Source ON resistance VGS = ±12 V, VDS = 0 Min Typ. Max Unit ⎯ ⎯ ±1 μA V (BR) DSS ID = −1 mA, VGS = 0 −20 ⎯ ⎯ V (BR) DSX ID = −1 mA, VGS = 12 V −8 ⎯ ⎯ IDSS Gate threshold voltage Test Condition VDS = −20 V, VGS = 0 ⎯ ⎯ −1 μA −0.5 ⎯ −1.1 V (Note 3) 1.3 2.7 ⎯ S ID = −0.65 A, VGS = −4 V (Note 3) ⎯ 140 180 ID = −0.65 A, VGS = −2.5 V (Note 3) ⎯ 200 260 ID = −0.65 A, VGS = −2.0 V (Note 3) ⎯ 260 460 Vth VDS = −3 V, ID = −0.1 mA ⏐Yfs⏐ VDS = −3 V, ID = −0.65 A RDS (ON) V mΩ Input capacitance Ciss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 370 ⎯ pF Reverse transfer capacitance Crss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 73 ⎯ pF Output capacitance Coss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 116 ⎯ pF Switching time Turn-on time ton VDD = −10 V, ID = −0.65 A, ⎯ 33 ⎯ ns Turn-off time toff VGS = 0~−2.5 V, RG = 4.7 Ω ⎯ 47 ⎯ ns Note 3: Pulse test Switching Time Test Circuit (a) Test circuit ID 0 (b) VIN 0V OUT IN −2.5 V 90% −2.5 V RG 10 μs 10% VDD (c) VOUT VDD = −10 V RG = 4.7 Ω < 1% D.U. = VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25°C VDS (ON) VDD 90% 10% tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. 2 2007-11-01 SSM6J08FU ID – VDS ID – VGS −3.0 −10000 Common Source −2.5 −4.0 (A) −2.5 Drain current ID Common Source Ta = 25°C −2.0 −1000 Drain current ID (mA) −10 −2.0 −1.8 −1.5 −1.0 −1.6 −0.5 −0.5 −1.0 −1.5 Drain-Source voltage 100°C −100 Ta = 25°C −10 −25°C −1 −0.1 VGS = −1.4 V 0 0 VDS = −3 V −0.01 0 −2.0 VDS (V) −0.5 −1.0 −1.5 Gate-Source voltage RDS (ON) – ID −2.0 VGS (V) RDS (ON) – VGS 1.0 1.0 Common Source Common Source Ta = 25°C 0.8 Drain-Source on resistance RDS (ON) (Ω) Drain-Source on resistance RDS (ON) (Ω) −2.5 0.6 VGS = −2 V 0.4 −2.5 0.2 ID = −0.65 A 0.8 Ta = 25°C 0.6 0.4 0.2 −4 0 0 −0.5 −1.0 −1.5 −2.0 −2.5 0 0 −3.0 Drain current ID (A) −2 −4 −6 Gate-Source voltage −8 −10 −12 VGS (V) |Yfs| – ID 10 RDS (ON) – Ta 0.5 Common Source Forward transfer admittance |Yfs| (S) Drain-Source on resistance RDS (ON) (Ω) ID = −0.65 A 0.4 VGS = −2 V 0.3 −2.5 0.2 −4 1 0.1 Common Source 0.1 VDS = −3 V Ta = 25°C 0 −25 0 25 50 75 100 125 0.01 −0.01 150 Ambient temperature Ta (°C) −0.1 −1 −10 Drain current ID (A) 3 2007-11-01 SSM6J08FU Vth – Ta C – VDS −1.0 600 Common Source VDS = −3 V −0.8 VGS = 0 500 f = 1 MHz (pF) ID = −0.1 mA −0.6 Capacitance C Gate threshold voltage Vth (V) Common Source −0.4 −0.2 Ta = 25°C 400 Ciss 300 200 Coss 100 Crss 0 −25 0 25 50 75 100 125 0 0 150 −4 Ambient temperature Ta (°C) −8 −12 Drain-Source voltage t – ID −16 −20 VDS (V) IDR – VDS −2.0 1000 Drain reverse current IDR (A) Switching time t (ns) Common Source 100 toff tf ton tr 10 Common Source VDD = −10 V VGS = 0 D Ta = 25°C −1.5 IDR G S −1.0 −0.5 VGS = 0~−2.5 V Ta = 25°C 0 0 RG = 4.7 Ω 1 −0.01 −0.1 −1 0.5 Drain-Source voltage −10 1 VDS (V) Drain current ID (A) Safe operating area −10 Dynamic Input Characteristic Mounted on FR4 board (25.4 mm × 25.4 mm ×1.6 t 2 Cu pad: 0.32 mm × 6) Fig: 1 −10 ID = −1.3 A Ta = 25°C (A) −8 ID max (pulsed) −10 V VDD = −16 V Drain current ID Gate-Source voltage VGS (V) Common Source −6 −4 −2 0 0 2 4 6 ID max (continuous) −1 DC operation Ta = 25°C −0.1 *: Single nonrepetitive Pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.01 −0.1 8 Total gate charge Qg (nC) 10 ms* 100 ms* −1 Drain-Source voltage 4 VDSS max −10 −100 VDS (V) 2007-11-01 SSM6J08FU rth – tw Transient thermal impedance rth (°C /W) 1000 100 Single pulse 10 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, 2 Cu pad: 0.32 mm × 6) Fig: 1 1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) PD – Ta 350 Drain power dissipation PD (mW) Mounted on FR4 board 300 (25.4 mm × 25.4 mm × 1.6 t, 2 Cu pad: 0.32 mm × 6) 250 Fig: 1 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 5 2007-11-01 SSM6J08FU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01