RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 4/6/2005 MAPLST2122-090CF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power amplifier applications. 90W Output Power at P1dB (CW) 11dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dB ACPR @ 4.096MHz) Q Output Power: 12W (typ.) Q Gain: 12dB (typ.) Q Efficiency: 16% (typ.) 10:1 VSWR Ruggedness (CW @ 60W, 28V, 2110MHz) MAPLST2122-090CF Maximum Ratings Parameter Symbol Rating Units Drain—Source Voltage VDSS 65 Vdc Gate—Source Voltage VGS 20 Vdc ID 20 Adc PD 206 W Storage Temperature TSTG -40 to +150 °C Junction Temperature TJ +200 °C Symbol Max Unit RΘJC 0.85 ºC/W Drain Current — Continuous Total Power Dissipation @ TC = 25 °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 2110 — 2170 MHz, 90W, 28V MAPLST2122-090CF 4/6/2005 Preliminary Characteristic Symbol Min Symbol V(BR)DSS Min 65 Typ — Max — Unit Vdc Zero Gate Voltage Drain Leakage Current 28 Vdc, VGS (VDS DS = 65 GS = 0) IDSS IDSS —— —— 101 µAdc µAdc Gate—Source Leakage Zero Gate Voltage DrainCurrent Leakage Current (VGS == 26 5 Vdc, VVDS ==0)0) (V Vdc, DS GS IGSS IDSS —— —— 11 µAdc µAdc Gate Threshold Voltage Gate—Source Leakage Current (VDS = 10 Vdc, ID = 60 mA) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON CHARACTERISTICS (VDS = 28 Vdc, ID = 750 mA) VGS(th) IGSS — 2 2.6 — 1 4 Vdc µAdc VDS(Q) 3 — 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) VDS(on) — TBD — Vdc Forward Transconductance (VGS = 10 Vdc, ID = 1 A) Gm — 4.0 — S Output Capacitance DYNAMIC CHARACTERISTICS (1) Coss — 98 — pF Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 4.5 — pF Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Gps — 11 — dB Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) EFF (ŋ) — 33 — % Two-Tone Common-Source Amplifier Intermodulation (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) IMD — -30 — dBc Input Return Loss (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) IRL — -13 — dB Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Gps — 11 — dB Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) EFF (ŋ) — 33 — % Two-Tone Common-Source Amplifier Intermodulation (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IMD — -30 — dBc Input Return Loss (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL — -13 -9 dB Output VSWR Tolerance (VDD = 28 Vdc, POUT = 90 W PEP. IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage GS = 0 Vdc, ID = 100 µAdc) OFF(V CHARACTERISTICS Typ Max Unit DYNAMIC CHARACTERISTICS @ 25ºC (VDS = 28 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS TESTS @ (In M/A-COM Fixture) FUNCTIONAL (In25ºC M/A-COM Test Test Fixture) (2) No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 2110 — 2170 MHz, 90W, 28V MAPLST2122-090CF 4/6/2005 Preliminary C1 Tantalum Electrolytic Surface Mt. Cap., 22 µF C2,C13 Ceramic Chip Capacitor, 0.1 µF C3,C12 Ceramic Chip Capacitor, 1000 pF C4,C5,C9,C10,C11 Chip Capacitor, 8.2 pF ATC100B C6,C7 Chip Capacitor, 1.0 pF ATC100B C8 Chip Capacitor, 0.3 pF, ATC100B C14 Electrolytic Surface Mount Capacitor, 220 µF J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 8 nH, CoilCraft A03T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST2122-090CF R1 Chip Resistor, 10 Ohm 1/4 Watt R2 Chip Resistor, 100K Ohm 1/4 Watt Z1-Z7 Distributed Microstrip Element PC Board (74350133-01), Arlon Woven Glass Teflon .030” Thick, Er=2.54, 2 Oz Copper Both Sides Figure 1. 2110—2170 MHz Test Fixture Schematic Figure 2. 2110—2170 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 2110 — 2170 MHz, 90W, 28V MAPLST2122-090CF 4/6/2005 Preliminary 25 14 VDD = 28V, f = 2.17GHz, IDQ = 850mA, 3.84MHz BW, 16 DPCH 20 Gain (dB) 12 11 Gain 15 10 10 9 8 Efficiency Efficiency (%) 13 5 7 0 6 27 32 37 42 POUT (dBm) Avg. Graph 1. W-CDMA: Power Gain and Drain Efficiency vs. Output Power -30 VDD = 28V, f = 2.17GHz, IDQ = 850mA, 3.84MHz BW, 16 DPCH -35 ACPR (dBc) -40 -45 -50 5MHz Offset -55 -60 -65 10MHz Offset -70 -75 -80 27 29 31 33 35 37 39 41 43 POUT (dBm) Avg. Graph 2. W-CDMA: Adjacent Channel Power Ratio vs. Output Power 4 RF Power LDMOS Transistor, 2110 — 2170 MHz, 90W, 28V MAPLST2122-090CF 4/6/2005 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 5 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020