ZETEX ZXMP6A17E6TA

ZXMP6A17E6
ADVANCE INFORMATION
60V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -60V; RDS(ON) = 0.125
ID = -3.0A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
SOT23-6
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP6A17E6TA
7”
8mm
3000 units
ZXMP6A17E6TC
13”
8mm
10000 units
DEVICE MARKING
Top View
• 617
PROVISIONAL ISSUE B - MARCH 2005
1
ZXMP6A17E6
ADVANCE INFORMATION
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate Source Voltage
V GS
Continuous Drain
Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(b)
(c)
LIMIT
UNIT
-60
V
20
V
ID
-3.0
-2.4
-2.3
A
I DM
-13.6
A
IS
-2.5
A
I SM
-13.6
A
(a)
PD
1.1
8.8
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
Power Dissipation at T A =25°C
Linear Derating Factor
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
113
°C/W
Junction to Ambient (b)
R θJA
73
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
PROVISIONAL ISSUE B - MARCH 2005
2
ZXMP6A17E6
ADVANCE INFORMATION
CHARACTERISTICS
1.2
Max Power Dissipation (W)
-ID Drain Current (A)
10 RDS(ON)
Limited
1
DC
1s
100m
100ms
10ms
1ms
10m
100us
Single Pulse, Tamb=25°C
1
10
100
1.0
0.8
0.6
0.4
0.2
0.0
0
25
-VDS Drain-Source Voltage (V)
100
80
D=0.5
60
Single Pulse
D=0.2
D=0.05
20
D=0.1
0
100µ 1m
10m 100m
1
10
100
75
100
125
150
Derating Curve
MaximumPower (W)
Thermal Resistance (°C/W)
P-channel Safe Operating Area
40
50
Temperature (°C)
1k
Single Pulse
Tamb=25°C
100
10
1
100µ 1m
Pulse Width (s)
10m 100m
1
10
100
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
PROVISIONAL ISSUE B - MARCH 2005
3
1k
ZXMP6A17E6
ADVANCE INFORMATION
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-60
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
TYP.
MAX.
UNI
T
CONDITIONS
STATIC
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance (1)(3)
V GS(th)
(1)
V
I D =-250␮A, V GS =0V
-1.0
␮A
V DS =-60V, V GS =0V
100
nA
V GS =⫾20V, V DS =0V
-1.0
R DS(on)
0.125
0.190
V
I =-250␮A, V DS = V GS
D
⍀
⍀
V GS =-10V, I D =-2.3A
V GS =-4.5V, I D =-1.9A
V DS =-15V,I D =-2.3A
g fs
4.9
S
Input Capacitance
C iss
670
pF
Output Capacitance
C oss
46.7
pF
Reverse Transfer Capacitance
C rss
28
pF
Turn-On Delay Time
t d(on)
2.4
ns
Rise Time
tr
3.5
ns
Turn-Off Delay Time
t d(off)
30.0
ns
Fall Time
tf
7.4
ns
Gate Charge
Qg
7.3
nC
Total Gate Charge
Qg
15.1
nC
Gate-Source Charge
Q gs
1.8
nC
Gate-Drain Charge
Q gd
1.9
nC
V SD
-0.85
t rr
Q rr
DYNAMIC
(3)
SWITCHING
V DS =-30V, V GS =0V,
f=1MHz
(2) (3)
V DD =-30V, I D =-1A
R G 6.0⍀, V GS =-10V
V DS =-30V,V GS =-5V,
I D =-2.3A
V DS =-30V,V GS =-10V,
I D =-2.3A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
-0.95
V
T J =25°C, I S =-2A,
V GS =0V
26.4
ns
T J =25°C, I F =-1.7A,
di/dt= 100A/µs
32.7
nC
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE B - MARCH 2005
4
ZXMP6A17E6
ADVANCE INFORMATION
TYPICAL CHARACTERISTICS
10V
T = 25°C
3.5V
3V
2.5V
1
-VGS
2V
0.1
0.01
0.1
1
10V
T = 150°C
4.5V
1
2V
-VGS
0.1
1.5V
0.01
10
4.5V
3.5V
3V
2.5V
10
-ID Drain Current (A)
-ID Drain Current (A)
10
-VDS Drain-Source Voltage (V)
0.1
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
2.0
T = 150°C
1
T = 25°C
0.1
-VDS = 10V
1
2
3
4
1.6
1.2
1.0
0.4
-50
-ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
50
100
150
Normalised Curves v Temperature
T = 25°C
3V
3.5V
1
4.5V
10V
1
0
Tj Junction Temperature (°C)
2.5V
0.1
VGS = VDS
ID = -250uA
0.6
5
-VGS
0.1
VGS(th)
0.8
Typical Transfer Characteristics
10
RDS(on)
1.4
-VGS Gate-Source Voltage (V)
2V
VGS = -10V
ID = - 0.9A
1.8
Normalised RDS(on) and VGS(th)
-ID Drain Current (A)
10
10
T = 150°C
1
0.01
0.0
10
-ID Drain Current (A)
T = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
1.4
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
PROVISIONAL ISSUE B - MARCH 2005
5
ZXMP6A17E6
ADVANCE INFORMATION
1000
900
800
700
600
500
400
300
200
100
0
0.1
10
VGS = 0V
f = 1MHz
-VGS Gate-Source Voltage (V)
C Capacitance (pF)
TYPICAL CHARACTERISTICS
CISS
COSS
CRSS
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
ID = -2.2A
8
6
4
2
VDS = -30V
0
0
2
4
6
8
10
12
14
16
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
PROVISIONAL ISSUE B - MARCH 2005
6
ZXMP6A17E6
ADVANCE INFORMATION
PACKAGE OUTLINE
PAD LAYOUT DETAILS
CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES.
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
0.90
1.45
0.35
0.057
E
2.60
3.00
0.102
0.118
A1
0.00
0.15
0
0.006
E1
1.50
1.75
0.059
0.069
A2
0.90
1.30
b
0.35
0.50
0.035
0.051
L
0.10
0.60
0.004
0.002
0.014
0.019
e
0.95 REF
0.037 REF
C
0.09
0.20
0.0035
0.008
e1
1.90 REF
0.074 REF
D
2.80
3.00
0.110
0.118
L
0°
10°
0°
10°
© Zetex Semiconductors plc 2005
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[email protected]
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[email protected]
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
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PROVISIONAL ISSUE B - MARCH 2005
7