PANJIT 1N4151W_03

DATA SHEET
1N4151W
SOD-123
SURFACE MOUNT SWITCHING DIODES
.154 (3.90)
500 mWatts
.141 (3.60)
FEATURES
.110 (2.80)
.098 (2.50)
.055 (1.40)
POWER
.071 (1.80)
50 Volts
.028 (0.70)
.019 (0.50)
VOLTAGE
Unit: inch ( mm )
.008 (.20) MAX.
.053 (1.35)
.037 (.95)
• Fast switching Speed.
• Electrically ldentical to Standerd JEDEC
• High Conductance
• Surface Mount Package ldeally Suited for Automatic lnsertion.
MECHANICAL DATA
Case: SOD-123 plastic case.
Terminals : Solderable per MIL-STD-202,Method 208
Standard packaging: 8mm tape
Weight: approximately 0.01g
.005(.12) MAX.
.016(.40) MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)
PAR AMETER
SYMB OL
Marki ng C ode
1N4151W
UNITS
A5
VR
50
V
Peak Reverse Voltage
VRM
75
V
Maxi mum RMS Voltage
VRMS
35
V
VDC
50
V
IAV
150
mA
Peak Forward Surge C urrent, 1.0s si ngle half si ne-wave
superi mposed on rated load (JED EC method)
IFSM
0.5
A
Power D i ssi pati on D erate Above 25O C
PTOT
500
mW
VF
[email protected]
V
IR
0.05
uA
Typi cal Juncti on C apaci tance( Notes1)
CJ
2
pF
Maxi mum Reverse Recovery (Notes2)
TRR
2
ns
RqJA
400
Reverse Voltage
Maxi mum D C Blocki ng Voltage
Maxi mum Average Forward C urrent at Ta=25O C
Maxi mum Forward Voltage
Maxi mum D C Reverse C urrent at Rated D C Blocki ng Voltage
TJ= 25O C
Maxi mum Thermal Resi stance
Storage Temperature Range
TJ
O
C /W
O
C
NOTE:
1. CJ at VR=0, f=1MHZ
2.From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω
DATE : APR.02.2003
PAGE . 1
10
REVERSE CURRENT, mA
FORWARD CURRENT, mA
100
10
1.0
TA=150 OC
TA=125 OC
1.0
TA=85 OC
0.1
TA=55 OC
0.01
TA=25 OC
0.1
0.2
0.6
0.4
0.8
1.0
1.2
0.001
0
20
30
40
50
REVERSE VOLTAGE, Volts
FORWARD VOLTAGE, Volts
LEAKAGE CURRENT
FORWARD VOLTAGE
DIODE CAPACITANCE, pF
10
6.0
4.5
60 W
3.5
VRF=2V
2nF
5k W
Vo
1.5
0
0
2
4
6
8
RECTIFICATION EFFCIENCY MEASUREMENT CIRCUIT
REVERSE VOLTAGE, Volts
TYPICAL CAPATICANCE
DATE : APR.02.2003
PAGE . 2