1N5802US thru 1N5806US SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MILPRF-19500/477 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. They are also available in axialleaded package configurations for thru-hole mounting (see separate data sheet for 1N5802 thru 1N5806). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. Package “A” or D-5A IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Surface mount package series equivalent to the JEDEC registered 1N5802 to 1N5806 series • Voidless hermetically sealed glass package • Extremely robust construction • Triple-layer passivation • Internal “Category I” Metallurgical bonds • JAN, JANTX, JANTXV, and JANS available per MIL-PRF19500/477 • Axial-leaded equivalents available (see 1N5802 thru 1N5806) • Ultrafast recovery 2.5 Amp rectifier series 50 to 150 V • Military and other high-reliability applications • Switching power supplies or other applications requiring extremely fast switching & low forward loss • High forward surge current capability • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • • • • • • • • o o Junction Temperature: -65 C to +175 C Storage Temperature: -65oC to +175oC Average Rectified Forward Current (IO): 2.5 A @ TEC = 75ºC Thermal Resistance: 20 ºC/W junction to end cap Thermal Impedance: 4.5oC/W @ 10 ms heating time Forward Surge Current: 35 Amps @ 8.3 ms half-sine Capacitance: 25 pF @ VR = 10 Volts, f = 1 MHz Solder temperature: 260ºC for 10 s (maximum) WWW . Microsemi .C OM DESCRIPTION • CASE: Hermetically sealed voidless hard glass with Tungsten slugs • TERMINALS: End caps are Copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver end caps with Tin/Lead (Sn/Pb) finish. • MARKING and POLARITY: Cathode band only • Tape & Reel option: Standard per EIA-481-B • Weight: 193 mg • See package dimensions and recommended pad layout on last page ELECTRICAL CHARACTERISTICS BREAKDOWN VOLTAGE (MIN.) @ 100μA VBR VOLTS VOLTS AVERAGE RECTIFIED CURRENT IO1 @ TEC=+75ºC (NOTE 1) AMPS AVERAGE RECTIFIED CURRENT IO2 @ TA=+55ºC (Note 2) AMPS MAXIMUM FORWARD VOLTAGE @1A (8.3 ms pulse) VF VOLTS o o 25 C 100 C 0.875 0.800 REVERSE CURRENT (MAX) @ VRWM IR o 25 C 1 1 1 1 1 μA o 100 C 50 50 50 50 50 SURGE CURRENT (MAX) IFSM (NOTE 3) REVERSE RECOVERY TIME (MAX) (NOTE 4) trr AMPS ns 1N5802US 50 55 2.5 1.0 35 1N5803US 75 80 2.5 1.0 35 1N5804US 100 110 2.5 1.0 0.875 0.800 35 1N5805US 125 135 2.5 1.0 35 1N5806US 150 160 2.5 1.0 0.875 0.800 35 NOTE 1: IO1 is rated at 2.5 A @ TEC = 75º. Derate at 50 mA/ºC for TEC above 125ºC. NOTE 2: IO2 is rated at 1.0 A @ TA = 55ºC for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for TA above 55ºC. o NOTE 3: TA = 25 C @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals NOTE 4: IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A Copyright © 2007 1-15-2007 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 25 25 25 25 25 Page 1 1N5802US – 1N5806US TYPE WORKING PEAK REVERSE VOLTAGE VRWM 1N5802US thru 1N5806US SCOTTSDALE DIVISION VRWM IO VF IR C trr Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range Average Rectified Output Current: Output Current Averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs. WWW . Microsemi .C OM SYMBOLS & DEFINITIONS Definition Symbol VBR SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS PACKAGE DIMENSIONS AND PAD LAYOUT NOTE: This Package Outline has also previously been identified as “D-5A” PAD LAYOUT INCHES mm 0.246 6.25 MAX MIN MAX B 0.067 1.70 BD .097 .103 2.46 2.62 C 0.105 2.67 BL .185 .200 4.70 5.08 ECT .019 .028 0.48 0.71 S .003 --- 0.08 --- INCHES Copyright © 2007 1-15-2007 REV A mm 1N5802US – 1N5806US A MIN Note: If mounting requires adhesive separate from the solder, an additional 0.060 inch diameter contact may be placed in the center between the pads as an optional spot for cement. Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2