2N4918 − 2N4920* Series Preferred Device Medium−Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. http://onsemi.com Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construction, 3.0 A, 40−80 V, 30 W GENERAL PURPOSE POWER TRANSISTORS PD = 30 W @ TC = 25C • Excellent Safe Operating Area • Gain Specified to IC = 1.0 A • Complement to NPN 2N4921, 2N4922, 2N4923 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N4918 2N4919 2N4920 Collector − Base Voltage Vdc 40 60 80 3 VCBO 2N4918 2N4919 2N4920 Emitter − Base Voltage Vdc 5.0 Vdc IC (Note 2) 1.0 3.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 30 0.24 W W/°C TJ, Tstg −65 to +150 °C Operating and Storage Junction Temperature Range 2 1 MARKING DIAGRAM 40 60 80 VEBO Collector Current − Continuous (Note 1) TO−225 CASE 077 STYLE 1 Unit Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The 1.0 A max IC value is based upon JEDEC current gain requirements. The 3.0 A max value is based upon actual current−handling capability of the device (See Figure 5). 2. Indicates JEDEC Registered Data for 2N4918 Series. YWW 2N 49xx xx Y WW = 18, 19, 20 = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *Preferred devices are recommended choices for future use and best overall value. THERMAL CHARACTERISTICS (Note 3) Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit JC 4.16 °C/W 3. Recommend use of thermal compound for lowest thermal resistance. **For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev. 11 1 Publication Order Number: 2N4918/D 2N4918 − 2N4920* Series ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 40 60 80 − − − − − − 0.5 0.5 0.5 − − 0.1 0.5 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 4) (IC = 0.1 Adc, IB = 0) VCEO(sus) 2N4918 2N4919 2N4920 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Vdc ICEO 2N4918 2N4919 2N4920 mAdc Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125C ICEX mAdc Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO − 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc 40 30 10 − 150 − ON CHARACTERISTICS DC Current Gain (Note 4) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE − Collector−Emitter Saturation Voltage (Note 4) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.6 Vdc Base−Emitter Saturation Voltage (Note 4) (IC = 1.0 Adc, IB = 0.1 Adc) VBE(sat) − 1.3 Vdc Base−Emitter On Voltage (Note 4) (IC = 1.0 Adc, VCE = 1.0 Vdc) VBE(on) − 1.3 Vdc fT 3.0 − MHz SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Cob − 100 pF Small−Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 − − 4. Pulse Test: PW 300 s, Duty Cycle 2.0% ORDERING INFORMATION Package Shipping† 2N4918 TO−225 500 Unit / Bulk 2N4919 TO−225 500 Unit / Bulk 2N4920 TO−225 500 Unit / Bulk TO−225 (Pb−Free) 500 Unit / Bulk Device 2N4920G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2N4918 − 2N4920* Series PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (°C) 125 150 Figure 1. Power Derating VBE(off) 5.0 0 APPROX −11 V VCC Vin t1 t2 Vin RB APPROX −11 V 0 t1 < 15 ns 100 < t2 < 500 s t3 < 15 ns t3 TURN−OFF PULSE IC/IB = 10, UNLESS NOTED TJ = 25°C TJ = 150°C 2.0 SCOPE Cjd<<Ceb APPROX 9.0 V VCC = 30 V IC/IB = 20 3.0 RC t, TIME (s) µ Vin +4.0 V RB and RC varied to obtain desired current levels 1.0 0.7 0.5 tr VCC = 60 V 0.3 0.2 0.1 0.07 0.05 DUTY CYCLE ≈ 2.0% VCC = 30 V td VCC = 60 V VBE(off) = 2.0 V VCC = 30 V VBE(off) = 0 10 Figure 2. Switching Time Equivalent Test Circuit 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 3. Turn−On Time http://onsemi.com 3 500 700 1000 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N4918 − 2N4920* Series 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) JC(t) = r(t) JC JC = 4.16°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) − TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.05 0.1 0.07 0.05 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 TJ = 150°C 2.0 100 s 1.0 ms 5.0 ms 5.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. dc 1.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMIT @ TC = 25°C 0.5 PULSE CURVES APPLY BELOW RATED VCEO 0.2 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active−Region Safe Operating Area 5.0 5.0 IC/IB = 20 3.0 1.0 IC/IB = 10 0.7 0.5 ts′ = ts − 1/8 tf 0.3 0.2 0.1 0.07 0.05 IC/IB = 20 2.0 t f , FALL TIME (s) µ t s′, STORAGE TIME (s) µ 3.0 2.0 TJ = 25°C TJ = 150°C IB1 = IB2 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 1.0 0.7 0.5 IC/IB = 10 0.3 0.2 0.1 0.07 0.05 500 700 1000 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 7. Fall Time Figure 6. Storage Time http://onsemi.com 4 TJ = 25°C TJ = 150°C VCC = 30 V IB1 = IB2 500 700 1000 2N4918 − 2N4920* Series hFE, DC CURRENT GAIN 1000 700 500 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) TYPICAL DC CHARACTERISTICS VCE = 1.0 V TJ = 150°C 300 200 25°C 100 70 50 −55 °C 30 20 10 2.0 3.0 5.0 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) 1000 2000 1.0 IC = 0.1 A 108 TJ = 25°C 0.4 0.2 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA) 100 50 200 1.5 VCE = 30 V IC = 10 ICES 107 1.2 106 VOLTAGE (VOLTS) RBE , EXTERNAL BASE−EMITTER RESISTANCE (OHMS) 1.0 A Figure 9. Collector Saturation Region IC ≈ ICES 105 IC = 2x ICES ICES VALUES OBTAINED FROM FIGURE 13 104 0 30 60 TJ = 25°C 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 VCE(sat) @ IC/IB = 10 90 120 0 2.0 3.0 5.0 150 10 20 30 50 100 200 300 500 1000 2000 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA) Figure 10. Effects of Base−Emitter Resistance Figure 11. “On” Voltage 102 +2.5 TEMPERATURE COEFFICIENTS (mV/ °C) IC, COLLECTOR CURRENT (A) µ 0.5 A 0.6 Figure 8. Current Gain 103 0.25 A 0.8 101 TJ = 150°C 100 10−1 100°C 10− 2 IC = ICES VCE = 30 V 104 REVERSE 103 −0.2 −0.1 25°C FORWARD 0 +0.1 +0.2 +0.3 +0.4 +2.0 *APPLIES FOR IC/IB < +1.5 +1.0 TJ = 100°C to 150°C +0.5 *VC FOR VCE(sat) 0 TJ = −55°C to +100°C −0.5 −1.0 −1.5 VB FOR VBE −2.0 −2.5 2.0 3.0 5.0 +0.5 hFE@VCE 1.0V 2 10 20 30 50 100 200 300 500 1000 2000 VBE, BASE−EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 12. Collector Cut−Off Region Figure 13. Temperature Coefficients http://onsemi.com 5 2N4918 − 2N4920* Series PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F Q −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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