2N5109 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5109J) • JANTX level (2N5109JX) • JANTXV level (2N5109JV) • JANS level (2N5109JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Features • Radiation testing (total dose) upon request • • • • Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 1009 Reference document: MIL-PRF-19500/453 Benefits • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter TC = 25°C unless otherwise specified Symbol Rating Collector-Emitter Voltage VCEO 20 Collector-Base Voltage VCBO 40 Unit Volts Volts Emitter-Base Voltage VEBO 3 Volts IC 400 mA 1 5.71 2.9 16.6 Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 25°C Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2002 Rev. D RθJA 175 W mW/°C W mW/°C °C/W TJ -65 to +200 °C TSTG -65 to +200 °C PT PT Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N5109 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Collector-Base Breakdown Voltage V(BR)CBO IC = 100 µA 40 Units Volts Collector-Emitter Breakdown Voltage V(BR)CEO IC = 5 mA 20 Volts Collector-Emitter Breakdown Voltage V(BR)CER IC = 5 mA, RBE = 10 Ω 40 Volts Emitter-Base Breakdown Voltage V(BR)EBO 3 Volts Collector-Emitter Cutoff Current ICEO1 ICEO2 IE = 100 µA VCE = 15 Volts VCE = 15 Volts, TA = 175°C On Characteristics Min Typ Max 20 5 µA mA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol hFE1 hFE2 DC Current Gain Collector-Emitter Saturation Voltage VCEsat Test Conditions IC = 50 mA, VCE = 15 Volts IC = 50 mA, VCE = 5 Volts TA = -55°C IC = 100 mA, IB = 10 mA Min 40 15 Test Conditions VCE = 15 Volts, f = 200 MHz, IC = 25 mA IC = 50 mA IC = 100 mA VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCC = 15 Volts, IC = 50 mA, f = 200 MHz, Pin = -10 dB VCC = 15 Volts, IC = 50 mA, 54 dB output VCC = 15 Volts, IC = 10 mA, f = 200 MHz, Pin = -10 dB VCC = 15 Volts, IC = 50 mA, 50 MHz < f < 216 MHz, Pin = -10dB Min Typ Max 150 Units 0.5 Volts Max Units Dynamic Characteristics Parameter Symbol Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE1| |hFE2| |hFE3| Open Circuit Output Capacitance COBO Power Gain (narrow band) current GPE Cross Modulation cm Noise Figure NF Voltage Gain (wideband) G Copyright 2002 Rev. D Typ 5 6 5 10.0 11.0 10.5 3.5 dB 11 11 pF -57 dB 3.5 dB dB Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2