2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium. • Reduces Board Space • High hFE, 210 −460 (Typical) • Low VCE(sat), < 0.5 V • ESD Performance: Human Body Model; 2000 V, Machine Model; 200 V • Available in 4 mm, 8000 Unit Tape & Reel • This is a Pb−Free Device http://onsemi.com PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector−Base Voltage V(BR)CBO −60 Vdc Collector−Emitter Voltage V(BR)CEO −50 Vdc Emitter−Base Voltage V(BR)EBO −6.0 Vdc IC −100 mAdc Symbol Max Unit Power Dissipation (Note 1) PD 265 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 ~ + 150 °C Rating Collector Current − Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Rating Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Device mounted on a FR−4 glass epoxy printed circuit board using the minimum recommended footprint. MARKING DIAGRAM 3 SOT−723 CASE 631AA F9 M 2 1 F9 = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† 2SA2029M3T5G SOT−723 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 November, 2004 − Rev. 1 1 Publication Order Number: 2SA2029M3/D 2SA2029M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = −50 Adc, IE = 0) V(BR)CBO −60 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Emitter−Base Breakdown Voltage (IE = −50 Adc, IE = 0) V(BR)EBO −6.0 − − Vdc Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO − − −0.5 nA Emitter−Base Cutoff Current (VEB = −7.0 Vdc, IB = 0) IEBO − − −0.1 A − − −0.5 120 − 560 − 140 − − 3.5 − Collector−Emitter Saturation Voltage (Note 2) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) DC Current Gain (Note 2) (VCE = −6.0 Vdc, IC = −1.0 mAdc) Vdc hFE Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) − fT Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz) COB 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. http://onsemi.com 2 MHz pF 2SA2029M3T5G TYPICAL ELECTRICAL CHARACTERISTICS 1000 VCE , COLLECTOR-EMITTER VOLTAGE (V) 300 A 250 200 60 150 IB = 50 A 0 3 6 12 9 10 0.1 15 1 10 100 VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 1. IC − VCE Figure 2. DC Current Gain 2 900 TA = 25°C 800 1.5 1 0.5 700 600 500 400 300 TA = 25°C VCE = 5 V 200 100 0 0.01 0.1 1 10 0 0.2 100 1 5 10 20 40 60 80 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. On Voltage 13 14 12 12 11 10 9 8 7 6 0.5 IB, BASE CURRENT (mA) Cob, CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) TA = − 25°C 100 100 30 0 DC CURRENT GAIN 90 VCE = 10 V TA = 25°C TA = 75°C COLLECTOR VOLTAGE (mV) IC, COLLECTOR CURRENT (mA) TA = 25°C 120 100 150 200 10 8 6 4 2 0 1 2 3 0 4 0 VEB (V) 10 20 VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 3 30 40 2SA2029M3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L C MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches SOT−723 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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