2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.) • Low leakage current: IDSS = −100 μA (max) (VDS = −100 V) • Enhancement mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −100 V Drain-gate voltage (RGS = 20 kΩ) VDGR −100 V Gate-source voltage VGSS ±20 V (Note 1) ID −12 Pulse (Note 1) IDP −48 Drain power dissipation (Tc = 25°C) PD 35 W Single pulse avalanche energy (Note 2) EAS 312 mJ Avalanche current IAR −12 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C DC Drain current A JEDEC ― JEITA TOSHIBA SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.57 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.94 mH, RG = 25 Ω, IAR = −12 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2007-02-01 2SJ380 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = −100 V, VGS = 0 V ⎯ ⎯ −100 μA ID = −10 mA, VGS = 0 V −100 ⎯ ⎯ V VDS = −10 V, ID = −1 mA V Drain-source breakdown voltage V (BR) DSS Gate threshold voltage Vth Drain-source ON resistance RDS (ON) Forward transfer admittance ⎪Yfs⎪ Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time −0.8 ⎯ −2.0 VGS = −4 V, ID = −6 A ⎯ 0.25 0.32 VGS = −10 V, ID = −6 A ⎯ 0.15 0.21 VDS = −10 V, ID = −6 A 4.5 7.7 ⎯ S ⎯ 1100 ⎯ pF ⎯ 200 ⎯ pF ⎯ 440 ⎯ pF ⎯ 18 ⎯ ⎯ 30 ⎯ ⎯ 18 ⎯ ⎯ 65 ⎯ ⎯ 48 ⎯ nC ⎯ 29 ⎯ nC ⎯ 19 ⎯ nC VDS = −10 V, VGS = 0 V, f = 1 MHz tr ID = −6 A 0V ton Fall time 50 Ω Switching time tf VOUT RL = 8.3 Ω Turn-on time VGS −10 V Ω ns VDD ∼ − −50 V Turn-off time toff Total gate charge Qg (gate-source plus gate-drain) Gate-source charge Qgs Gate-drain (“miller”) charge Qgd Duty < = 1%, tw = 10 μs VDD ∼ − −80 V, VGS = −10 V, ID = −12 A Source-Drain Ratings and Characteristics (Tc = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Symbol Test Condition Min Typ. Max Unit IDR ⎯ ⎯ ⎯ −12 A IDRP ⎯ ⎯ ⎯ −48 A Forward voltage (diode) VDSF IDR = −12 A, VGS = 0 V ⎯ ⎯ 1.7 V Reverse recovery time trr IDR = −12 A, VGS = 0 V ⎯ 160 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 50 A/μs ⎯ 0.5 ⎯ μC Marking J380 Characteristics indicator Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2007-02-01 2SJ380 ID – VDS Common source Tc = 25°C Pulse test −4 −3 −8 −10 −16 −6 Common source Tc = 25°C Pulse test −8 −6 (A) Drain current ID (A) −4 ID – VDS −20 Drain Current ID −5 −3 −2.5 −2 −1 −4 −12 −10 −3.5 −8 −3 −4 −2.5 VGS = −2 V VGS = −2 V 0 0 −0.4 −1.2 −0.8 Drain-source voltage −1.6 0 0 −2.0 VDS (V) −2 −4 VDS (V) Common source 25 Tc = −55°C 100 −6 −4 −2 −1 −2 −3 −4 Gate-source voltage −5 Tc = 25°C Pulse test −2.4 −1.6 −4 −0.8 −2 0 0 −6 ID = −8 A VGS (V) −4 −8 −16 −20 VGS (V) RDS (ON) – ID 30 2.0 Common source VDS = −10 V Pulse test 10 Drain–source ON resistance RDS (ON) (Ω) (S) −12 Gate-source voltage ⎪Yfs⎪ – ID Forward transfer admittance ⎪Yfs⎪ VDS (V) VDS – VGS Common source VDS = −10 V Pulse test 0 0 −10 −3.2 Drain-source voltage Drain current ID (A) −8 −8 Drain-source voltage ID – VGS −10 −6 Tc = −55°C 25 100 5 3 1.0 Common source Tc = 25°C Pulse test 0.5 0.3 VGS = −4 V −10 0.1 0.05 1 −0.3 −1.0 −3 −10 0.03 −0.1 −20 Drain current ID (A) −0.3 −1.0 −3 −10 −20 Drain current ID (A) 3 2007-02-01 2SJ380 IDR – VDS −30 Common source Common source Pulse test Tc = 25°C −4 (A) ID = −8 A 0.4 −8 Drain reverse current IDR Drain-source ON resistance RDS (ON) (Ω) RDS (ON) – Tc 0.5 0.3 −2, −4 VGS = −4 V 0.2 −2 0.1 0 −80 −10 −5 −3 −1 −0.5 −40 −0.3 0 40 80 120 160 VGS = −10 V −3 VGS = −10 V 0 Pulse test −2 −5 0, 1 −1 0.4 0.2 Case temperature Tc (°C) 0.6 Drain-source voltage Capacitance – VDS Vth (V) 500 Gate threshold voltage (pF) Capacitance C Ciss 1000 Coss 300 Common source 100 VGS = 0 V Crss f = 1 MHz Tc = 25°C −0.3 −1 −3 Drain-source voltage VDS (V) Common source VDS = −10 V ID = −1 mA Pulse test 3000 30 −0.1 1.0 Vth – Tc −4 5000 50 0.8 −10 −30 −100 VDS (V) −3 −2 −1 0 −80 −40 0 40 80 120 160 Case temperature Tc (°C) Dynamic Input/Output Characteristics VDS (V) Drain-source voltage Drain power dissipation PD (W) 30 20 10 0 0 40 80 120 −80 −60 VDS VDD = −80 V −20 −16 −12 −20 V −40 −8 −40 V −20 −4 VGS 0 0 160 Common source ID = −12 A Tc = 25°C Pulse test 20 40 60 80 VGS (V) −100 Gate-source voltage PD – Tc 40 0 100 Total gate charge Qg (nC) Case temperature Tc (°C) 4 2007-02-01 2SJ380 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.5 0.3 0.2 0.1 0.05 0.05 0.02 0.1 0.03 PDM t 0.01 Single pulse T 0.01 Duty = t/T Rth (ch-c) = 3.57°C/W 0.005 0.003 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 (s) Safe Operating Area EAS – Tch −100 500 IC max (pulsed)* 100 μs* −30 1 ms* ID max (continuous) Drain current ID (A) Avalanche energy EAS (mJ) −50 10 10 ms* −10 −5 −3 DC operation Tc = 25°C 400 300 200 100 −1 −0.5 −0.3 0 25 *: Single nonrepetitive pulse Tc = 25°C −3 −10 75 100 125 150 Channel temperature (initial) Tch (°C) Curves must be derated linearly with increase in temperature. −0.1 −1 50 VDSS max −30 Drain-source voltage −100 −300 VDS (V) 15 V BVDSS IAR −15 V VDS VDD Test circuit RG = 25 Ω VDD = −25 V, L = 2.94 mH 5 Wave form ⎞ 1 2 ⎛ B VDSS ⎟ Ε AS = ·L·I · ⎜⎜ ⎟ 2 − B V DD ⎠ ⎝ VDSS 2007-02-01 2SJ380 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-02-01