SENSITRON SEMICONDUCTOR SHD123634P SHD123634N SHD123634D TECHNICAL DATA DATA SHEET 4668, REV. PRELIMINARY POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • • • Ultra Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Out Performs 200 Volt Ultra Fast Rectifiers Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Thermal Resistance Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IF(AV) IFSM EAS IAR RthJC TJ Tstg Condition 50% duty cycle, rectangular wave form Common Cathode (N)/Common Anode(P) 50% duty cycle, rectangular wave form Doubler (D) 8.3 ms, half Sine wave (per leg) TJ = 25 °C, IAS = 1.3 A, L = 40mH (per leg) IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5VR Per Package - Max. 100 150 Units V A 120 A 1000 A 27 mJ 1.3 A 0.2 -65 to +200 -65 to +200 °C/W °C °C Electrical Characteristics: Characteristics Max. Forward Voltage Drop Symbol VF1 Condition Max. Units 0.99 V @ 120A, Pulse, TJ = 25 °C (per leg) measured at the leads 0.84 V VF2 @ 120A, Pulse, TJ = 125 °C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 100V, Pulse, 0.06 mA TJ = 25 °C (per leg) 6 mA IR2 @VR = 100V, Pulse, TJ = 125 °C (per leg) 3000 pF Max. Junction Capacitance CT @VR = 5 V, TC = 25 °C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) Due to the nature of the 100V Schottky devices, some degradation in trr performance at high temperatures should be expected, unlike conventional lower voltage Schottkys. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected] • SHD123634P SHD123634N SHD123634D TECHNICAL DATA DATA SHEET 4668, REV. PRELIMINARY Mechanical Dimensions: in inches / mm 1.27 (32.26 1.23 31.24) 0.370 (9.40 0.330 8.38) 0.64 (16.26 0.60 15.24) 0.720 (18.29 0.680 17.27) 1 2 3 0.50(12.70) Min 0.167 (4.24 Dia 0.147 3.73) 0.220 (5.59 0.180 4.57) 3 Places 0.40(10.16) Typ 0.030 (0.762 0.010 0.254) 0.260(6.61) Max Epoxy Shell Heat Sink 0.180 (4.57 0.140 3.55) Typical Forward Characteristics Typical Reverse Characteristics Instantaneous Reverse Current - IR (mA) 103 102 150 °C 125 °C 101 100 °C 0 10 75 °C 10-1 50 °C 10-2 25 °C 125 °C 0 10 20 30 Reverse Voltage - VR (V) 40 50 Typical Junction Capacitance 25 °C 101 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop - VF (V) 0.8 Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) 175 °C 175 °C 102 5000 4000 3000 2000 1000 0 10 20 30 Reverse Voltage - VR (V) 40 50 Vf Curves Shown are for die only. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected] • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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