FMM5049VT Power Amplifier MMIC FEATURES • • • • High Output Power: Pout = 41.0dBm (Typ.) High Linear Gain: GL = 33.0dB (Typ.) Broad Band: 1.8 to 2.3GHz Hermetically Sealed Package DESCRIPTION The FMM5049VT is a high-gain, wide band, three-stage MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the 1.8-2.3GHz band. The output stage is partially matched for this device. This product is uniquely suited for use in base station amplifiers as it offers high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDD +12 V Gate-Source Voltage VGG -7 V Input Power Pin +15 dBm Storage Temperature Tstg -55 to +125 °C Operating Backside Temperature Top -40 to +85 °C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 10 volts. 2. The drain-source operating voltage (VGG) should not exceed -5 volts. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Output Power Pout Linear Gain (Note 1) GL Drain Current IDD Gate Current IGG DC Input Current IDD(DC) Conditions VDD1,2 = 10V f = 2.2GHz Pin = 12dBm Without RF Note 1 Pin≤-6dBm Edition 1.0 October 2001 1 Min. Limits Typ. Max. Unit 39.0 41.0 - dBm 30.0 33.0 - dB - 4000 - mA - 70 - mA - 2500 - mA FMM5049VT Power Amplifier MMIC OUTPUT POWER, IDD vs. INPUT POWER @ W-CDMA BAND(TUNED) 42 VDD = 10V, VGG = -5V 5600 Pout(2.1GHz) 40 IDD(2.1GHz) Pout(2.15GHz) 5200 38 IDD(2.15GHz) Pout(2.2GHz) 4800 36 4400 34 4000 32 3600 30 3200 28 2800 26 2400 -8 -6 -4 -2 0 2 4 6 8 10 IDD (mA) Pout (dBm) IDD(2.2GHz) 12 Pin (dBm) ACP, IMD & IDD vs. OUTPUT POWER @ W-CDMA BAND(TUNED) VDD = 10V, VGG = -5V, W-CDMA 2-tone Signal, f1 = 2.14GHz, 0 f2 = 2.155GHz VDD = 10V, VGG = -5V 42 Output Power (dBm) 40 ACP (dBc), IMD (dBc) Pin=12dBm 8dBm 38 4dBm 36 34 0dBm -10 3500 IDD IMD 5M 10M 3000 -20 2500 -30 2000 -40 1500 -50 1000 32 30 -4dBm 2.00 2.05 2.10 2.15 2.20 2.25 26 2.30 Frequency (GHz) 28 30 32 Total Output Power (dBm) 2 34 36 IDD (mA) OUTPUT POWER vs. FREQUENCY @ W-CDMA BAND(TUNED) FMM5049VT Power Amplifier MMIC S11 S22 +j50 +j100 +j25 S21 S12 +90° 80 1.7 60 2.1 +j250 1.7 2.9GHz 2.3 2.5 40 1.9 10 0 100 50Ω 180° 250 .005 2.9GHz .01 SCALE FOR |S12| 2.7 20 2.9GHz 1.7 1.9 1.9 2.7 2.1 2.7 2.3 2.5 2.11.9 2.7 2.5 2.5 -j10 -j250 1.7 2.3 2.9GHz 2.1 -j100 -j25 0° 2.3 -j50 SCALE FOR |S21| +j10 -90° S-PARAMETERS VDD1,2 = 10V, VGG = -5V FREQUENCY S11 (MHZ) MAG ANG 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 .374 .322 .252 .195 .188 .182 .192 .241 .338 .408 .463 .523 .580 92.6 65.1 15.6 -55.3 -121.9 179.1 118.2 65.6 23.9 -11.0 -39.6 -68.2 -96.6 S21 S12 S22 MAG ANG MAG ANG MAG ANG 44.398 51.515 57.842 56.725 49.890 41.985 35.139 28.492 22.187 19.007 14.903 11.450 9.734 -99.2 -144.4 165.5 114.1 65.6 21.2 -20.9 -62.0 -96.5 -134.8 -167.5 155.9 122.1 .003 .003 .003 .003 .002 .001 .001 .001 .002 .002 .002 .002 .002 14.1 -4.0 -34.5 -51.8 -73.8 -69.6 -78.6 -73.6 -102.5 -125.7 -136.7 -163.6 179.7 .594 .543 .523 .562 .578 .567 .543 .559 .570 .604 .663 .709 .747 93.0 63.0 17.2 -36.7 -75.4 -99.7 -116.1 -128.5 -144.0 -156.5 -170.2 177.1 167.1 Download S-Parameters, click here 3 FMM5049VT Power Amplifier MMIC 1.5Min. 12.9±0.2 5.2Max. 0.1 2.6 Case Style "VT" 1.5Min. 1.6 0.2Max. 6 21.0 1 17.0 5 10.7±0.3 2 10.7 4 3.2 3 3.2 0.3 2-3.2 7 1. VDD1 2. Pin 3. VGG 4. NC 5. Pout 6. VDD2 7. Source(GND) Unit: mm 2-R1.6 (1.8) Index For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0901M200 4