P Channel Enchancement Mode MOSFET ST2301 -2.8A DESCRIPTION The ST2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE z -20V/-2.8A, RDS(ON) = 120m-ohm @VGS = -4.5V z -20V/-2.0A, RDS(ON) = 170m-ohm @VGS = -2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design 3 D G S 1 1.Gate 2 2.Source 3.Drain 3 S01YA 1 2 S: Subcontractor Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 P Channel Enchancement Mode MOSFET ST2301 -2.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS +12 V ID A IDM -2.5 -1.5 -10 A Continuous Source Current (Diode Conduction) IS -1.6 A Power Dissipation PD W TJ 1.25 0.8 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current TA=25℃ TA=70℃ Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 2 P Channel Enchancement Mode MOSFET ST2301 -2.5A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Symbol Condition V(BR)DSS VGS=0V,ID=-250uA VGS(th) IGSS RDS(on) Forward Transconductance gfs Diode Forward Voltage VSD IS=-1.6A,VGS=0V Qg Qgs Qgd Ciss Coss Crss VDS=-6V,VGS=-4.5V ID≡-2.8A On-State Drain Current ID(on) V -1.5 VDS=0V,VGS=+8V Drain-source On-Resistance IDSS -20 VDS=VGS,ID=-250uA -0.45 VDS=-30V,VGS=0V VDS=-30V,VGS=0V TJ=55℃ VDS≦-5V,VGS=-4.5V VDS≦-5V,VGS=-2.5V VGS=-4.5V,ID=-2.8A VGS=-2.5V,ID=-2.0A VDS=-5V,ID=-2.8V Zero Gate Voltage Drain Current Min Typ Max Unit V +100 nA -1 -10 -6 -3 uA A 0.09 0.12 Ω 0.145 0.17 6.5 S -0.8 -1.2 V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time td(on) tr td(off) tf VDS=-6V,VGS=0V F=1MHz VDD=-6V,RL=6Ω ID=-1A,VGEN=-4.5V RG=6Ω 5.8 0.85 1.7 415 223 23 13 36 42 34 10 nC pF 25 60 nS 70 60 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 3 P Channel Enchancement Mode MOSFET ST2301 -2.5A SOT-23-3L PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 4 P Channel Enchancement Mode MOSFET ST2301 -2.5A TYPICAL CHARACTERICTICS (25℃ Unless noted) Page 5 P Channel Enchancement Mode MOSFET ST2301 -2.5A TYPICAL CHARACTERICTICS (25℃ Unless noted) Page 6