AP1801GU
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V gate drive
D
▼ Lower on-resistance
D
D
D
▼ Surface mount package
2021-8
G
S
-20V
RDS(ON)
70mΩ
ID
S
S
BVDSS
-4A
Description
D
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
The 2021-8 J-lead package provides good on-resistance performance
and space saving like SC-70-6.
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Unit
-20
V
±12
V
3
-4
A
3
-3.3
A
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
20
A
PD@TA=25℃
Total Power Dissipation
1.6
W
Linear Derating Factor
0.013
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
78
℃/W
200111051
AP1801GU
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
-20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-4.8A
-
-
52
mΩ
VGS=-4.5V, ID=-4A
-
-
70
mΩ
VGS=-2.5V, ID=-2A
-
-
100
mΩ
-0.5
-
-1.2
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=VGS, ID=-250uA
VDS=-5V, ID=-4A
-
10
-
S
o
VDS=-20V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-16V ,VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=-4A
-
11
18
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
VDS=-10V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
26
-
ns
tf
Fall Time
RD=10Ω
-
16
-
ns
Ciss
Input Capacitance
VGS=0V
-
740
1180
pF
Coss
Output Capacitance
VDS=-20V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6.6
10
Ω
Min.
Typ.
Max.
Unit
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=-1.3A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=4A, VGS=0V,
-
29
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <5sec ; 125 ℃/W at steady state.
AP1801GU
20
20
- 5.0V
- 4.5V
- 3.5V
-ID , Drain Current (A)
15
-5.0V
-4.5V
T A = 150 o C
-3.5V
15
-ID , Drain Current (A)
o
T A =25 C
- 2.5V
10
5
10
-2.5V
5
V G = -1.5 V
V G = -1.5 V
0
0
0
1
2
3
0
4
1
Fig 1. Typical Output Characteristics
3
4
Fig 2. Typical Output Characteristics
1.4
80
I D = -4 A
V G = - 4.5V
I D = -2 A
o
Normalized R DS(ON)
T A =25 C
70
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
60
1.2
1.0
0.8
50
40
0.6
0
2
4
6
8
10
-50
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4.0
1.6
T j =150 o C
2.0
Normalized -VGS(th) (V)
-IS(A)
3.0
T j =25 o C
1.0
0.0
1.2
0.8
0.4
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP1801GU
f=1.0MHz
1000
I D =-4A
V DS =-16V
C iss
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
4
C oss
C rss
0
100
0
5
10
15
20
25
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (R thja)
Duty factor=0.5
10
100us
-ID (A)
1ms
1
10ms
0.2
0.1
0.1
0.05
0.02
100ms
o
T A =25 C
Single Pulse
1s
DC
0.01
t
T
Single Pulse
0.01
0.1
PDM
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125℃
℃ /W
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
QG
T j =150 o C
20
-4.5V
QGS
QGD
10
Charge
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q