RF3816 Proposed 0 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz Typical Applications • Cellular Basestation Amplifiers and • Narrow and Broadband Commercial and Transceivers Military Radio Designs • Gain Stage or Driver Amplifiers for Linear and Saturated Amplifiers Product Description IG N S 45° + 1° 0.055 + 0.005 0.070 sq. 0.020 + 0.002 N E W D E S R1 The RF3816 is a high-performance InGaP/GaAs general purpose RF and microwave gain block amplifier. This 50Ω amplifier is based on a reliable HBT MMIC design, providing unsurpassed performance for many small-signal applications. Designed with an external bias resistor, the RF3816 provides high output power and high gain over broad frequency range. This low-cost amplifier is packaged in a thermally efficient, industry standard, ceramic Micro-X package providing excellent ThetaJC performance. 0.200 sq. Typ Optimum Technology Matching® Applied Si BJT GaAs HBT Si Bi-CMOS SiGe HBT Si CMOS Package Style: Micro-X, 4-Pin, Ceramic Features SiGe Bi-CMOS R GaN HEMT • Reliable, Low-Cost HBT Design • 12.1dB Gain, +17.3dBm [email protected] • High P1dB of [email protected] GND 4 N O T NOTES: 1. Shaded lead is pin 1. 2. Darkened areas are metallization. GaAs MESFET FO 9InGaP/HBT 0.040 + 0.002 • Single 6V Power Supply Operation MARKING - R1 • 50Ω I/O Matched • Thermally-Efficient Package RF IN 1 3 RF OUT Ordering Information RF3816 2 GND Functional Block Diagram Cascadable Broadband GaAs MMIC Amplifier DC to 6GHz (Bulk: 25 piece increment) RF3816SB 5-piece Sample Bag RF3816SR 100-piece Reel RF3816TR7 7” Reel (1,000 pieces) RF3816PCBA-410 Evaluation Board RF Micro Devices, Inc. Tel (336) 664 1233 7628 Thorndike Road Fax (336) 664 0454 Greensboro, NC 27409, USA http://www.rfmd.com NOT FOR NEW DESIGNS Rev A2 041013 4-1 RF3816 Proposed N O T FO R N E W D E S IG N S Please contact RF Micro Devices Applications Engineering at (336) 678-5570 for more information. 4-2 Rev A2 041013