RF3165 RF31653V 1750 MHz WCDMA Linear Power Amplifier Module 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Input/Output Internally Matched@50Ω 28dBm Linear Output Power 42% Peak Linear Efficiency 28dB Linear Gain -41dBc ACLR @ ±5MHz HSDPA Capable IM NC 15 14 13 RF IN 1 12 VCC2 GND 2 11 VCC2 10 VCC2 VMODE 3 Bias Multi-Mode W-CDMA 3G Handsets Spread-Spectrum Systems 6 7 8 NC 3V W-CDMA Band 3, 4, and 9 Handsets 5 NC 9 RF OUT NC VREG 4 Applications 16 NC VCC1/IM Features VCCBIAS RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 Functional Block Diagram Product Description The RF3165 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V W-CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1710MHz to 1785MHz band (Band 3). The RF3165 has a digital control line for low power applications to lower quiescent current. The RF3165 is assembled in at 16-pin, 3mmx3mm, QFN package. Ordering Information RF3165 RF3165PCBA-410 9GaAs HBT GaAs MESFET InGaP HBT 3V 1750MHz W-CDMA Linear Power Amplifier Module Fully Assembled Evaluation Board Optimum Technology Matching® Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A7 DS061201 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 6 RF3165 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage (RF off) +8.0 V Supply Voltage (POUT ≤31dBm) +5.2 V Control Voltage (VREG) +3.9 V Input RF Power +10 dBm Mode Voltage (VMODE) +3.9 V Operating Temperature -30 to +110 °C Storage Temperature -40 to +150 °C Moisture Sensitivity Level IPC/JEDEC J-STD-20 MSL 2 @260 °C Parameter Min. Specification Typ. Max. Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Unit T=25oC Ambient, VCCBIAS =3.4V, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =28dBm for all parameters (unless otherwise specified). Modulation is 3GPP 3.2 03-00 DPCCH+1DPDCH. High Gain Mode (VMODE Low) Operating Frequency Range 1710 1785 MHz Linear Gain 28 dB Harmonics -15 dBm Maximum Linear Output 28 f=2fo, 3fo dBm Linear Efficiency 42 Maximum ICC 442 mA ACLR1 @ ±5MHz -41 dBc ACLR2 @ ±10MHz -51 dBc Input VSWR 2:1 Output VSWR Stability % 6:1 No oscillation>-70dBc 10:1 Noise Power Condition No damage -146 dBm/Hz -50<POUT <+28dBm, RX=925MHz to 960MHz (Band 8) -115 dBm/Hz -50<POUT <+28dBm, RX=1805MHz to 1880MHz (Band 3 and 9) -144 dBm/Hz -50<POUT <+28dBm, RX=2110MHz to 2170MHz (Band 1 and 4) -151 dBm/Hz -50<POUT <+28dBm, RX=2400MHz to 2480MHz (Bluetooth) -156 dBm/Hz -50<POUT <+28dBm, RX=869MHz to 894MHz (Band 5 and 6) -140 dBm/Hz -50<POUT <+28dBm, RX=1930MHz to 1990MHz (Band 2) IM Products 2 of 6 IM 5MHz -41 -31 dBc IF offset fO +5MHz with CW signal=-40dBc IM 10MHz -51 -41 dBc IF offset fO +10MHz with CW signal=-40dBc 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A7 DS061201 RF3165 Parameter Min. Specification Typ. Max. Unit Condition T=25oC Ambient, VCCBIAS =3.4V, VCC =1.5V, VREG =2.8V, VMODE =2.8V, and POUT =16dBm for all parameters (unless otherwise specified). Modulation is 3GPP 3.2 03-00 DPCCH+1DPDCH. Low Gain/Low VCC Mode (VMODE High) Operating Frequency Range 1710 Linear Gain 1785 26 MHz dB Maximum Linear Output dBm Linear Efficiency 21.0 % ACLR @ ±5MHz -40 dBc ACLR @ ±10MHz -54 dBc Maximum ICC 125 mA Input VSWR 2:1 Output VSWR Stability Ruggedness 6:1 No oscillation>-65dBc 10:1 No damage IM Products IM 5MHz -41 -31 dBc IF offset fO +5MHz with CW signal=-40dBc IM 10MHz -53 -41 dBc IF offset fO +10MHz with CW signal=-40dBc 3.4 4.2 V Power Supply Supply Voltage (VCC1 and VCC2) 3.2 0.6 VCC Bias V 1.5 Low power with DC to DC Converter 4.2 V High Gain Idle Current (ICC1 /ICC2 /ICCBIAS) 70 93 mA VMODE =low and VREG =2.8V, VCC =3.4V Low Gain Idle Current (ICC1 /ICC2 /ICCBIAS) 60 83 mA VMODE =high and VREG =2.8V, VCC =1.5V 1 3 mA VREG Current VMODE Current 250 RF Turn On/Off Time 1.2 6 uS DC Turn On/Off Time 2 25 uS Total Current (Power Down) VREG Low Voltage (Power Down) 0.2 0 VREG High Voltage (Recommended) 2.75 VREG High Voltage (Operational) 2.8 uA 0.5 uA 0.5 V 2.95 V 2.7 3.0 V VMODE Voltage 0 0.5 V High Gain Mode VMODE Voltage 2.0 3.0 V Low Gain Mode Rev A7 DS061201 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 6 RF3165 Pin 1 2 3 Function RF IN GND VMODE 4 VREG 5 6 7 8 9 10 NC NC NC NC RF OUT VCC2 11 VCC2 12 VCC2 13 14 NC IM 15 VCC1/IM 16 Pkg Base VCCBIAS GND Description Interface Schematic RF input internally matched to 50Ω. This input is internally AC-coupled. Ground connection. For nominal operation (High Power mode), VMODE is set LOW. When set HIGH, devices are biased lower to improve efficiency at lower output levels. Regulated voltage supply for amplifier bias circuit. In power down mode, both VREG and VMODE need to be LOW (<0.5V). No connection. Do not connect this pin to any external circuit. No connection. Do not connect this pin to any external circuit. No connection. Do not connect this pin to any external circuit. No connection. Do not connect this pin to any external circuit. RF output. Internally AC-coupled. Output stage collector supply. Connect to pin 11 with the shortest trace possible. Please see the schematic for required external components. See note. Output stage collector supply and output matching. Connect to pin 10 and pin 12 with the shortest trace possible. See note. Output stage collector supply and output matching. Connect to pin 11 with the shortest trace possible. See note. No connection. Do not connect this pin to any external circuit. Interstage matching. Connect to pin 15 with the shortest trace possible. See note. First stage collector supply and interstage matching. A 4.7μF decoupling capacitor may be required. Connect to pin 14 with the shortest trace possible. See note. Power supply input for the DC bias circuitry. Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. Note: Refer to Layout Recommendation Application Note and Application Schematic for additional information. Package Drawing 3.00 1.45 A Pin 1 ID 3.00 Pin 1 ID 0.28 TYP 0.18 1.45 0.05 0.15 C B 2 PLCS 0.15 C 0.40 TYP 0.20 0.10 M C A B 2 PLCS 0.50 TYP 0.203 REF 0.08 C 0.08 C 0.925 0.775 Shaded areas represent pin 1. 4 of 6 0.102 REF C Dimensions in mm. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A7 DS061201 RF3165 Application Schematic VCC BIAS VCC L2 10 μF 1 nF 16 RF IN 15 14 13 1 12 2 11 3 10 VMODE 1 nF 1 nF Place this component next to RF3165 with minimal trace length to the PA. Bias 4 9 RF OUT VREG 1 nF 5 6 7 8 Matching Component VCC BIAS can be connected to VCC; however, VCC must be maintained above 1.5 V. L2 = 8.2 nH and may be needed to provide isolation between VCC1 and VCC2 depending on layout. Circuit Optimization for Various Output Power Requirements Output Power (dBm) Matching Component Sample Part Number Typical Efficiency (%) 28.5 15nH LQG15HN12NJ02D (Murata) 41 GRM1555C1HR50BZ01E (Murata) 42 28 N/A 27.5 0.5pF Rev A7 DS061201 42 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 6 RF3165 Evaluation Board Schematic VCCBIAS VCC1 C30 4.7 μF R1 0Ω R2 DNI L2 DNI C3 1 nF 16 J1 RF IN 50 Ω μstrip 15 14 13 1 12 2 11 VCC2 VMODE 3 C20 4.7 μF 10 C1 1 nF 9 50 Ω μstrip Bias 4 VREG C40 4.7 μF C2 1 nF 5 6 7 P2 P1-1 1 VMODE P1-2 2 VREG 3 GND P2-3 4 GND P2-4 5 GND CON5 J2 RF OUT 8 P1 6 of 6 C10 22 μF P2-1 1 VCC2 2 GND 3 VCC1 4 VCCBIAS 5 GND CON5 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A7 DS061201