RF2363 0 DUAL-BAND 3V LOW NOISE AMPLIFIER Typical Applications • GSM/DCS Dual-Band Handsets • General Purpose Amplification • Cellular/PCS Dual-Band Handsets • Commercial and Consumer Systems Product Description 0.15 0.05 1.59 1.61 0.365 TEXT* The RF2363 is a dual-band Low Noise Amplifier designed for use as a front-end for 950MHz GSM/1850MHz DCS applications and may be used for dual-band cellular/PCS applications. The 900MHz LNA is a single-stage amplifier; the 1900MHz LNA is a 2-stage amplifier. The part may also be tuned for applications in other frequency bands. The device has an excellent combination of low noise figure and high linearity at a very low supply current. It is packaged in a very small industry standard SOT 8-lead plastic package. 2.80 3.00 0.650 2.60 3.00 1.44 1.04 *When Pin 1 is in upper left, text reads downward (as shown). 0.127 3°MAX 0°MIN 0.35 0.55 Optimum Technology Matching® Applied 9 Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS Package Style: SOT, 8-Lead Features • Low Noise and High Intercept Point • 18dB Gain at 900MHz • 21dB Gain at 1900MHz • Low Supply Current RF OUT1 1 8 RF IN1 GND 2 7 GND RF OUT2 3 6 RF IN2 EN1 4 5 EN2 • Single 2.5V to 5.0V Power Supply • Very Small SOT-23-8 Plastic Package Ordering Information RF2363 RF2363 PCBA Functional Block Diagram Rev B3 040114 Dual-Band 3V Low Noise Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-347 RF2363 Absolute Maximum Ratings Parameter Supply Voltage Input RF Level Operating Ambient Temperature Storage Temperature Parameter Rating Unit -0.5 to +6.0 +10 -40 to +85 -40 to +150 VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Specification Min. Typ. Max. Unit 800 to 1000 1800 to 2000 MHz MHz Condition Overall RF Frequency Range T = 25°C, RF=950MHz, VCC =2.8V, EN1=2.8V, EN2=0V 950MHz Performance Gain Isolation Gain Step Noise Figure Output IP3 Input P1dB Reverse Isolation Input VSWR Output VSWR 16 +17 18 16 34 1.3 +24 -10 20 1.8:1 1.8:1 20 dB dB dB dB dBm dBm dB 2:1 2:1 No external matching With external match as per GSM/DCS Application Schematic T = 25°C, RF=1850MHz, VCC =2.8V, EN2=2.8V, EN1=0V 1850MHz Performance Gain Isolation Gain Step Noise Figure Output IP3 Input P1dB Reverse Isolation Input VSWR Output VSWR 20 +16 21.5 10 31.5 1.4 +22 -12 30 1.7:1 1.7:1 24 EN1=0V Gain - Isolation dB dB dB dB dBm dBm dB 2:1 2:1 EN2=0V Gain - Isolation No external matching With external match as per GSM/DCS Application Schematic LNA Select “Enable” Voltage “Disable” Voltage VCC 0 V V 2.8 2.5 to 5.0 5 V V mA 7.5 mA Power Supply Voltage Current Consumption 1 4-348 μA T = 25 °C Specifications Operating limits 900MHz LNA Enabled, 1900MHz LNA Disabled; total DC current 1900MHz LNA Enabled, 900MHz LNA Disabled; total DC current EN1=EN2=0V Rev B3 040114 RF2363 Pin 1 2 3 Function RF OUT1 GND RF OUT2 4 EN1 5 EN2 6 RF IN2 7 8 GND RF IN1 Rev B3 040114 Description RF output pin for ~900MHz LNA. This pin is an open-collector output. It must be biased to either VCC or pin 4 through a choke or matching inductor. It is typically matched to 50Ω with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. Ground connection. NOTE: Ground traces on pins 2 and 7 are equivalent to a small amount of inductance (~0.75nH). The dimensions of these lines are as follows. Pin 2: L=56mils, W=15mils, H=31mils Pin 7: L=56mils, W=15mils, H=31mils Dielectric is FR-4. RF output pin for ~1900MHz LNA. This pin is an open-collector output. It must be biased to either VCC or pin 4 through a choke or matching inductor. It is typically matched to 50Ω with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. Enable pin for ~900MHz LNA. A voltage equal to the supply voltage LNA. This pin should be disabled (0V) when the ~1900MHz LNA is in use. Enable pin for ~1900MHz LNA. A voltage equal to the supply voltage LNA. This pin should be disabled (0V) when the ~900MHz LNA is in use. See package drawing for description of pin orientation. RF input pin for ~1900MHz. This pin is matched to approximately 50Ω at DCS/PCS frequencies. An external AC coupling capacitor is required at this pin. Same as pin 2. RF input pin for ~900MHz. This pin is matched to approximately 50Ω at GSM/Cellular frequencies. An external AC coupling capacitor is required at this pin. Interface Schematic RF OUT RF IN1 To Bias Circuits LNA1 LNA2 Pin 2 Pin 7 EN2 RF OUT2 RF IN2 See pin 3. See pin 3. See pin 2. See pin 1. 4-349 RF2363 RF2363 Theory of Operation and Application Information The RF2363 contains two independent low noise amplifiers which have been optimized for dual-band applications in the GSM (905MHz to 960MHz) and DCS (1805MHz to 1880MHz) frequency bands. Fabricated using heterojunction bipolar transistor (HBT) technology, the RF2363 delivers high linear gain at a very low noise figure and low power consumption. Internal temperature compensation keeps the gain tightly controlled over temperature extremes (typically less than 1dB of gain variation from -40°C to +85°C at 2.8V). A 50Ω input impedance allows the part to be connected to standard receiver front end filters without additional matching components. MODE CONTROL The RF2363 incorporates two enable pins (EN1 and EN2) for biasing the desired LNA according to the table below. EN1 GND GND VCC EN2 GND VCC GND Mode Power Down 1900MHz LNA On 900MHz LNA On 900MHz LNA The 900MHz LNA is a single-stage, common emitter amplifier. Since the input pin contains a DC bias, an AC coupling capacitor is required at this pin. An external bias inductor from the output pin (RF OUT1) to VCC provides DC biasing for the amplifier transistor and assists in matching the output impedance to the next receiver stage. A capacitor having a good RF bypass characteristic at the frequency of operation should be placed as close as possible to the supply voltage side of the bias inductor; a low frequency bypass capacitor should also be included. The EN1 pin supplies VCC to the bias circuits of the LNA and should also be effectively bypassed with both low and high frequency capacitors. 4-350 1900MHz LNA The 1900MHz LNA is implemented by two common emitter stages in cascade. The first stage is biased through an external inductor at the EN2 pin. This inductor also acts as an interstage match; a resistor in parallel with the inductor is recommended to 'de-Q' the inductor, thus providing a broader band interstage match. An external bias inductor from the output pin (RF OUT2) to VCC provides DC biasing for the second stage transistor and assists in matching the output impedance to the next receiver stage. Low and high frequency bypass capacitors should be used on the supply side of both the EN2 and RF OUT2 bias inductors. An AC coupling capacitor is required at the RF IN2 pin. LAYOUT CONSIDERATIONS To provide optimal balance of gain and linearity, a small amount of inductance is required in the ground traces of the PCB. The recommended inductance is between 0.5 and 1.0nH, with 0.75nH used on the Evaluation Board. Depending on the application, more gain with less linearity or more linearity with less gain may be desired. Appropriate adjustment of the ground inductance can accomplish these objectives. Minimizing the ground inductance will maximize the gain at the expense of linearity while increasing the ground inductance will increase the linearity at the expense of gain. It is important to remember that the pin 7 ground inductance affects the performance of both LNAs, while the pin 2 ground inductance affects only the 1900MHz LNA. Rev B3 040114 RF2363 Application Schematic (GSM/DCS) EN1 10 nF 100 pF EN2 47 pF 10 nF 47 pF 1 kΩ 10 nF 3.9 nH 5 4 RF IN2 6 3 VCC 3.3 nH 22 nF RF OUT2 1 pF 7 2 8 1 22 nF 2 pF RF IN1 RF OUT 12 nH VCC Note orientation of package in this schematic. 100 pF 10 nF Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1 P2 P2-1 1 VCC 2 GND P1-1 CON2 P1-3 Note orientation of package in this schematic. P1-4 1 EN2 2 GND 3 EN1 4 VCC CON4 EN1 C9 10 nF C10 100 pF EN2 C12 10 nF J3 RF IN2 C11 47 pF R1 1 kΩ 50 Ω μstrip L1 3.9 nH C1 22 nF C7 47 pF U1 VCC 5 4 6 3 7 2 8 1 0.75nH J4 RF IN1 L2 3.3 nH C6 1 pF 50 Ω μstrip J2 RF OUT 0.75nH 50 Ω μstrip 50 Ω μstrip C2 22 nF Notes: Ground traces on pins 2 and 7 are equivalent to a small amount of inductance (-1 nH). The dimensions of these lines are as follows. Pin 2: L = 56 mils, W = 15 mils, H = 31 mils Pin 7: L = 56 mils, W = 15 mils, H = 31 mils Dielectric is FR-4 Rev B3 040114 C8 10 nF L3 12 nH C5 2 pF VCC C3 100 pF J1 RF OUT C4 10 nF 4-351 RF2363 Evaluation Board Layout Board Size 1.0" x 1.0" Board Thickness 0.031”, Board Material FR-4 4-352 Rev B3 040114 RF2363 Gain versus Frequency 900 MHz LNA 19.0 -40°C, 2.8V -40°C, 3.2V +25°C, 2.8V +25°C, 3.2V +85°C, 2.8V +85°C, 3.2V 18.8 Gain versus Frequency 1900 MHz LNA 23.0 -40°C, 2.8V -40°C, 3.2V +25°C, 2.8V +25°C, 3.2V +85°C, 2.8V +85°C, 3.2V 22.5 18.6 Gain (dB) Gain (dB) 22.0 18.4 18.2 21.5 21.0 18.0 20.5 17.8 17.6 20.0 925.0 930.0 935.0 940.0 945.0 950.0 955.0 960.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0 Frequency (MHz) Frequency (MHz) Noise Figure versus Frequency 900 MHz LNA 1.5 Noise Figure versus Frequency 1900 MHz LNA 2.0 2.8V 3.2V 2.8V 1.9 3.2V 1.4 1.8 Noise Figure (dB) Noise Figure (dB) 1.7 1.3 1.2 1.6 1.5 1.4 1.3 1.1 1.2 1.1 1.0 1.0 925.0 940.0 945.0 950.0 955.0 960.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0 Frequency (MHz) Frequency (MHz) Input 1 dB Compression Point versus Frequency 900 MHz LNA Input 1 dB Compression Point versus Frequency 1900 MHz LNA -1.0 Input Power at 1 dB Compression (dBm) 935.0 -2.0 -3.0 -6.0 -40°C, 2.8V -40°C, 3.2V +25°C, 2.8V +25°C, 3.2V +85°C, 2.8V +85°C, 3.2V -7.0 Input Power at 1 dB Compression (dBm) 0.0 930.0 -4.0 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0 -11.0 -12.0 -13.0 -9.0 -10.0 -11.0 -12.0 -13.0 -14.0 -15.0 -16.0 -17.0 -14.0 -15.0 925.0 -8.0 -40°C, 2.8V -40°C, 3.2V +25°C, 2.8V +25°C, 3.2V +85°C, 2.8V +85°C, 3.2V -18.0 930.0 935.0 940.0 945.0 Frequency (MHz) Rev B3 040114 950.0 955.0 960.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0 Frequency (MHz) 4-353 RF2363 Output 3rd Order Intercept Point versus Frequency 900 MHz LNA 32.0 31.0 29.0 30.0 28.0 29.0 27.0 28.0 26.0 -40°C, 2.8V -40°C, 3.2V +25°C, 2.8V +25°C, 3.2V +85°C, 2.8V +85°C, 3.2V 26.0 25.0 25.0 OIP3 (dBm) 27.0 OIP3 (dBm) Output 3rd Order Intercept Point versus Frequency 1900 MHz LNA 30.0 24.0 24.0 23.0 22.0 23.0 21.0 22.0 20.0 21.0 19.0 20.0 18.0 19.0 17.0 18.0 -40°C, 2.8V -40°C, 3.2V +25°C, 2.8V +25°C, 3.2V +85°C, 2.8V +85°C, 3.2V 16.0 925.0 930.0 935.0 940.0 945.0 950.0 955.0 960.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0 Frequency (MHz) Frequency (MHz) Current versus Supply Voltage 900 MHz LNA 12.0 Current versus Supply Voltage 1900 MHz LNA 14.0 900 LNA, -40°C 1900 LNA, -40°C 900 LNA, +25°C 11.0 13.0 1900 LNA, +25°C 900 LNA, +85°C 9.0 11.0 Current (mA) 12.0 Current (mA) 10.0 8.0 7.0 6.0 9.0 8.0 7.0 4.0 6.0 3.0 5.0 4.0 2.5 2.7 2.9 3.1 Supply Voltage (VDC) 4-354 10.0 5.0 2.0 1900 LNA, +85°C 3.3 3.5 2.5 2.7 2.9 3.1 3.3 3.5 Supply Voltage (VDC) Rev B3 040114 RF2363 0.8 1.0 900MHz LNA Swp Max 2.5GHz 2. 0 0 .6 Input impedance 0. 4 Output impedance 3.0 4 .0 5 .0 0.2 950 MHz 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 -10.0 -0.2 950 MHz -5.0 -4. 0 Swp Min 0.5GHz -1.0 -0.8 -0. 6 .0 -2 -3 .0 0.5 MHz .4 -0 0.8 1.0 1900MHz LNA Swp Max 2.5GHz 2.0 0 .6 Input impedance 0. 4 Output impedance 0 3. 4 .0 5.0 0.2 10.0 1850 MHz 5.0 4.0 3.0 1850 MHz 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 -10.0 0.5 MHz -5.0 0 -3 .0 -1.0 -0.8 - 0. 6 .0 -2 .4 -0 Rev B3 040114 - 4. -0.2 Swp Min 0.5GHz 4-355 RF2363 4-356 Rev B3 040114