MITSUBISHI RD12MVP1

MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD12MVP1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
(a)
(b)
RD12MVP1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
7.0+/-0.2
0.2+/-0.05
FEATURES
(4.5)
•High Power Gain
Pout>10W, Gp>[email protected]=7.2V,f=175MHz
•High Efficiency: 55%min. (175MHz)
•No gate protection diode
INDEX MARK
[Gate]
4.2+/-0.2
5.6+/-0.2
6.2+/-0.2
(3.6)
8.0+/-0.2
(d)
(b)
0.65+/-0.2
OUTLINE DRAWING
DESCRIPTION
2.6+/-0.2
0.95+/-0.2
(c)
TOP VIEW
SIDE VIEW
BOTTOM VIEW
APPLICATION
SIDE VIEW
For output stage of high power amplifiers in
VHF band mobile radio sets.
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
Standoff = max 0.05
0.7+/-0.1
1.8+/-0.1
DETAIL A
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD12MVP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
ID
Pin
Pch
Tj
Tstg
Rthj-c
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Channel Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
CONDITIONS
VGS=0V
VDS=0V
Zg=Zl=50Ω
Tc=25°C
Junction to Case
RATINGS
60
-5 to +20
4.0
1.0
125
+150
-40 to +125
1.5
UNIT
V
V
A
W
W
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
(Tc=25°C, UNLESS OTHERWISE NOTED)
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
VTH
Pout
ηD
Zero Gate Voltage Drain Current
Gate to Source Leak Current
Gate Threshold Voltage
Output Power
Drain Efficiency
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
f=175MHz,VDD=7.2V
Pin=0.5W,Idq=1.0A
VDD=9.5V,Po=10W(Pin Control)
f=175MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
VSWRT Load VSWR tolerance
MIN.
1.8
10
55
LIMITS
TYP. MAX.
10
1.0
4.4
12
57
No destroy
UNIT
uA
uA
V
W
%
-
Note: Above parameters, ratings, limits and conditions are subject to change.
RD12MVP1
MITSUBISHI ELECTRIC
1/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD12MVP1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
CHANNEL DISSIPATION Pch(W
60
Vgs-Ids CHARACTERISTICS
7
*PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm)
Thermal sheet: GELTEC COOH-4000(t=0.5mm)
50
Ta=+25°C
Vds=10V
6
Ids
5
30
Ids(A)
40
On PCB with Termal sheet
and Heat-sink
(Size : 41 x 55mm, t=7.2 mm)
20
4
3
2
10
1
0
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(deg:C.)
200
0
Vds-Ids CHARACTERISTICS
Ta=+25°C
Vgs=7.5V
6
7
120
5
Vgs=6.5V
4
3
Ciss(pF)
Ids(A)
5
Ta=+25°C
f=1MHz
140
6
Vgs=5.5V
1
100
80
60
40
2
20
Vgs=4.5V
0
0
0
1
2
3
4
5
Vds(V)
6
7
8
9
0
Vds VS. Coss CHARACTERISTICS
5
10
Vds(V)
15
20
Vds VS. Crss CHARACTERISTICS
20
160
Ta=+25°C
f=1MHz
140
Ta=+25°C
f=1MHz
18
16
120
14
100
Crss(pF)
Coss(pF)
3
4
Vgs(V)
160
7
80
60
12
10
8
6
40
4
20
2
0
0
0
RD12MVP1
2
Vds VS. Ciss CHARACTERISTICS
9
8
1
5
10
Vds(V)
15
20
0
MITSUBISHI ELECTRIC
2/7
5
10
Vds(V)
15
20
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD12MVP1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
90
14
60
30
ηd
Gp
20
40
10
20
Idd
0
5
10
15
20
Pin(dBm)
80
70
10
8
ηd
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=1.0A
6
4
Idd
25
0
30
60
50
40
30
2
0
0
Po
12
ηd(%)
Po(dBm) , Gp(dB) , Idd(A)
80
Po
Pout(W) , Idd(A)
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=1.0A
40
ηd(%)
Pin-Po CHARACTERISTICS @f=175MHz
0.0
0.5
1.0
20
1.5
Pin(W)
Vdd-Po CHARACTERISTICS @f=175MHz
30
6
Po(W)
25
Po
5
Idd
20
4
15
3
10
2
5
1
4
RD12MVP1
Idd(A)
Ta=25°C
f=175MHz
Pin=0.6W
Idq=1.0A
Zg=ZI=50 ohm
6
8
Vdd(V)
10
12
MITSUBISHI ELECTRIC
3/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
TEST CIRCUIT (f=175MHz)
Vgg
Vdd
C1
C2
22uF,50V
19mm W
RD12MVP1
175MHz
L2
4.7k Ohm
W 19mm
RF-in
47pF
17mm
3.5mm
3mm
3mm
L1
24pF
100pF
Note:Board material= glass-Epoxy Substrate
Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm
W:Line width=1.0mm
RD12MVP1
RF-out
9.5mm
9.5mm
330pF
47pF
14mm
9mm
330pF
54pF
L1:10.8nH,4Turns,D:0.43mm,1.66mm(outside diameter)
L2:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter)
C1,C2:2200pF
MITSUBISHI ELECTRIC
4/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD12MVP1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq.
[MHz]
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
RD12MVP1
S11
(mag)
0.782
0.801
0.817
0.833
0.847
0.860
0.872
0.882
0.894
0.901
0.910
0.917
0.918
0.923
0.930
0.933
0.938
0.939
0.942
0.943
0.946
0.950
0.950
0.953
0.952
0.954
0.955
0.954
0.955
0.958
0.958
0.956
0.958
0.956
0.958
0.957
0.959
S21
(ang)
-165.5
-166.9
-168.0
-168.8
-169.7
-170.6
-171.6
-172.4
-173.0
-173.5
-174.2
-175.2
-176.1
-176.7
-177.2
-177.7
-178.1
-178.8
-179.3
179.7
179.5
179.1
178.8
178.3
177.9
177.5
176.9
176.4
176.3
175.9
175.6
175.1
174.5
174.3
174.0
173.8
173.6
(mag)
6.105
4.716
3.724
3.023
2.519
2.137
1.828
1.569
1.361
1.193
1.062
0.947
0.844
0.756
0.683
0.623
0.568
0.520
0.477
0.439
0.407
0.378
0.350
0.327
0.306
0.286
0.268
0.252
0.238
0.225
0.213
0.203
0.192
0.182
0.175
0.166
0.158
S12
(ang)
69.0
62.4
56.4
51.6
47.5
43.5
39.6
36.0
33.4
31.0
28.5
25.9
23.5
21.5
20.4
18.7
17.2
15.7
14.3
13.3
12.2
11.3
10.4
9.8
8.9
8.3
7.7
7.2
7.0
6.4
5.9
5.5
5.3
5.3
5.3
5.2
5.7
(mag)
0.024
0.022
0.021
0.019
0.016
0.015
0.013
0.012
0.010
0.008
0.007
0.006
0.005
0.004
0.005
0.005
0.006
0.007
0.008
0.009
0.011
0.011
0.012
0.013
0.014
0.015
0.016
0.018
0.018
0.020
0.021
0.022
0.023
0.024
0.025
0.026
0.026
S22
(ang)
-16.8
-20.5
-25.7
-27.3
-31.1
-30.0
-34.0
-30.9
-31.7
-24.1
-20.9
-13.8
-1.5
16.0
35.4
43.3
53.6
58.5
63.6
68.8
73.9
72.4
74.8
79.1
77.0
77.2
79.2
78.9
79.9
78.9
80.1
79.0
79.6
79.3
78.3
80.7
78.8
MITSUBISHI ELECTRIC
5/7
(mag)
0.743
0.766
0.783
0.799
0.825
0.845
0.864
0.871
0.879
0.888
0.901
0.915
0.918
0.917
0.922
0.928
0.935
0.943
0.941
0.941
0.945
0.949
0.950
0.952
0.954
0.951
0.955
0.957
0.958
0.961
0.954
0.960
0.958
0.962
0.964
0.964
0.962
(ang)
-162.7
-164.0
-165.6
-166.4
-167.2
-167.7
-168.6
-169.6
-170.4
-171.3
-172.1
-172.9
-173.6
-174.4
-174.8
-175.5
-176.3
-176.8
-177.1
-177.8
-178.3
-178.9
-179.5
-179.8
179.8
179.4
178.9
178.6
178.1
177.7
177.5
177.3
176.8
176.4
176.0
176.0
175.8
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD12MVP1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz]
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
RD12MVP1
S11
(mag)
0.799
0.813
0.825
0.835
0.846
0.857
0.868
0.877
0.886
0.895
0.900
0.907
0.909
0.913
0.921
0.925
0.932
0.931
0.933
0.937
0.943
0.943
0.946
0.947
0.946
0.951
0.949
0.951
0.950
0.956
0.956
0.956
0.953
0.948
0.955
0.955
0.957
S21
(ang)
-169.4
-170.7
-171.3
-171.9
-172.5
-173.4
-174.3
-174.9
-175.3
-175.7
-176.4
-177.3
-178.1
-178.7
-179.1
-179.6
-180.0
179.2
178.6
178.0
177.7
177.3
177.0
176.6
175.9
175.5
175.0
174.7
174.5
174.3
173.7
173.3
172.8
172.5
172.2
172.0
171.8
(mag)
5.980
4.690
3.726
3.045
2.569
2.206
1.904
1.648
1.436
1.270
1.141
1.023
0.917
0.820
0.745
0.683
0.627
0.575
0.529
0.486
0.452
0.422
0.391
0.366
0.341
0.322
0.302
0.284
0.269
0.253
0.240
0.228
0.218
0.206
0.196
0.186
0.178
S12
(ang)
72.2
65.9
60.1
55.9
52.3
48.4
44.3
40.7
38.2
35.8
33.1
30.4
27.7
25.8
24.6
23.0
21.2
19.4
18.1
16.6
16.1
14.9
14.0
12.7
12.0
11.3
10.5
9.6
9.3
9.2
8.7
7.9
7.1
6.6
7.0
7.3
7.1
(mag)
0.021
0.020
0.019
0.017
0.016
0.015
0.013
0.011
0.010
0.009
0.008
0.007
0.007
0.005
0.006
0.006
0.007
0.007
0.008
0.009
0.010
0.011
0.013
0.013
0.015
0.015
0.016
0.017
0.019
0.020
0.020
0.021
0.023
0.024
0.024
0.025
0.026
S22
(ang)
-11.2
-14.9
-17.2
-21.5
-22.4
-21.1
-21.2
-21.3
-19.9
-15.8
-11.9
-7.2
1.3
20.2
27.4
36.9
50.8
53.6
57.3
67.9
70.4
70.9
73.8
75.6
76.9
75.8
76.4
77.8
79.0
77.8
78.7
78.7
77.3
76.8
78.3
78.6
79.1
MITSUBISHI ELECTRIC
6/7
(mag)
0.757
0.780
0.785
0.794
0.821
0.846
0.863
0.864
0.864
0.876
0.891
0.906
0.915
0.908
0.910
0.921
0.933
0.937
0.935
0.931
0.935
0.945
0.948
0.946
0.946
0.945
0.949
0.952
0.955
0.954
0.950
0.952
0.953
0.958
0.959
0.958
0.956
(ang)
-166.6
-167.5
-168.8
-169.3
-169.3
-169.5
-170.4
-170.9
-171.4
-172.0
-172.6
-173.1
-173.9
-174.4
-174.5
-175.2
-175.9
-176.6
-176.8
-177.0
-177.4
-178.0
-178.6
-179.0
-179.3
-179.6
179.9
179.4
179.0
178.9
178.9
178.4
177.9
177.4
177.3
177.4
177.1
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Warning!
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD12MVP1
MITSUBISHI ELECTRIC
7/7
1st Jun. 2006