DATA SHEET BAV19WS~BAV21WS SURFACE MOUNT SWITCHING DIODES VOLTAGE 120-250 Volts POWER SOD-323 200mWatts Unit: inch (mm) FEATURES .014(.35) .054(1.35) • Electrically Identical to Standard JEDEC .045(1.15) • Surface mount package Ideally Suited for Automatic insertion .009(.25) .078(1.95) .068(1.75) • Fast switching speed. • High Conductance .006(.15) Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .002(.05) .038(.95) .027(.70) • Both normal and Pb free product are available : .107(2.7) .090(2.3) .012(.30)MIN. MECHANICAL DATA Case: SOD-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.0045 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified. For capacitive load, derate current by 20%. PA RA M E TE R S YM B O L B AV 1 9 W S B AV 2 0 W S B AV 2 1 W S A8 A80 A82 VR 100 150 200 V V RM 120 200 250 V M a r k i ng C o d e R e ve r s e V o l t a g e P e a k R e ve r s e V o l t a g e R e c t i f i e d C ur r e nt ( A ve r a g e ) , H a l f Wa ve R e c t i f i c a t i o n w i t h R e s i s t i ve L o a d a nd f > = 5 0 H z U N IT S IO 200 mA P e a k F o r w a r d S ur g e C ur r e nt , 1 . 0 us IF S M 2 .5 A P o w e r D i s s i p a t i o n D e r a t e A b o ve 2 5 OC P TOT 200 mW M a xi m um F o r w a r d V o l t a g e a t 0 . 1 A VF 1 .0 V M a xi m um D C R e ve r s e C ur r e nt a t R a t e d D C B l o c k i ng V o l t a g e T J = 2 5 OC IR 0 .1 uA Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e s 1 ) CJ 5 .0 pF M a xi m um R e ve r s e R e c o ve r y ( N o t e s 2 ) T RR 50 ns Rθ J A 640 T J , T S TG -5 5 to +1 5 0 M a xi m um The r m a l R e s i s t a nc e O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e O C / W O C NOTE: 1. CJ at VR=0, f=1MHZ 2.From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω STAD-MAY.18.2004 PAGE . 1 100 100 I R , LEAKAGE CURRENT, uA FORWARD CURRENT, mA 1000 TJ =25OC 10 1.0 0.1 0.01 0 1.0 10 1.0 0.1 0.01 2.0 FORWARD VOLTAGE, VOLTS Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE P D , POWER DISSIPATION (mW) DIODE CAPACITANCE, pF 4.5 3.0 1.5 2 4 6 REVERSE VOLTAGE, VOLTS FIG. 3 TYPICAL JUNCTION CAPACITANCE STAD-MAY.18.2004 200 O 6.0 0 100 T J , JUNCTION TEMPERATURE, C FIG. 1-TYPICAL FORWARD CHARACTERISTIC 0 0 8 400 300 200 100 0 50 100 150 200 O AMBIENT TEMPERATURE( C) FIG. 4 POWER DERATING CURVE PAGE . 2