ONSEMI NSR15TWD

NSR15TW1
Triple RF
Schottky Diode
These diodes are designed for analog and digital applications,
including DC based signal detection and mixing applications.
Features:
• Low Capacitance (<1 pF)
• Low VF (390 mV typical @ 1 mA)
• Low VF (1 mV typical @ 1 mA)
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RF SCHOTTKY
BARRIER DIODES
15 VOLTS, 30 mA
Benefits:
• Reduced Parasitic Losses
• Accurate Signal Measurement
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
Forward Current
Operating and Storage
Temperature Range
Symbol
Max
Unit
VR
15
V
IF
30
mA
TJ, Tstg
–65 to
+150
°C
6
5
4
1
2
3
ESD Rating: Class 1 per Human Body Model
ESD Rating: Class A per Machine Model
6
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance –
Junction to Ambient
Symbol
Value
Unit
RJA
500
°C/W
1
2
5
4
3
SC–88
CASE 419B
STYLE 15
MARKING DIAGRAM
OZ M
OZ = Specific Device Code
M = Date Code
ORDERING INFORMATION
 Semiconductor Components Industries, LLC, 2002
February, 2002 – Rev. 1
1
Device
Package
Shipping
NSR15TW1T2
SC–88
3000/Tape & Reel
Publication Order Number:
NSR15TW1/D
NSR15TW1
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
VBR
15
20
–
V
Reverse Leakage (VR = 1 V)
IR
–
2
50
nA
Forward Voltage (IF = 1 mA)
VF1
–
390
415
mV
Forward Voltage (IF = 10 mA)
VF2
–
530
680
mV
Delta VF (IF = 1 mA, All Diodes)
VF
–
1
15
mV
CT
–
0.8
1
pF
Breakdown Voltage (IR = 10 A)
Capacitance (VF = 0 V, f = 1 MHz)
100 k
IR, REVERSE CURRENT (nA)
IF, FORWARD CURRENT (mA)
100
10
25°C
75°C
1
125°C
–25°C
0.1
0.01
10 k
125°C
1k
75°C
100
25°C
10
1
0
0.1
0.2
0.3
0.4
0.5
VF, FORWARD VOLTAGE (V)
0.6
0
0.7
5
10
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Current versus Forward
Voltage at Temperatures
Figure 2. Reverse Current versus Reverse
Voltage
1000
RD, DYNAMIC RESISTANCE ()
CT, CAPACITANCE (pF)
1
0.9
0.8
0.7
0.6
0.5
15
100
10
1
0
1
2
3
4
5
6
VR, REVERSE VOLTAGE (V)
7
8
0.1
Figure 3. Total Capacitance versus Reverse
Voltage
1
10
IF, FORWARD CURRENT (mA)
100
Figure 4. Dynamic Resistance versus Forward
Current
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2
100
IF (left scale)
10
10
VF (right scale)
1
0.3
0.4
0.5
0.6
0.7
VF, FORWARD VOLTAGE (V)
0.8
0.1
Figure 5. Typical VF Match at Mixer Bias Levels
IF (left scale)
1
VF (right scale)
1
0.1
0.175
0.225
0.275
VF, FORWARD VOLTAGE (V)
0.325
Figure 6. Typical VF Match at Detector Bias Levels
1
10
DC Bias = 3 A
1
0.1
0.1
NSR15TW1
RF IN
VDET, (Vdc)
VDET, (Vdc)
10
100
10
1
0.1
VF, FORWARD VOLTAGE DIFFERENCE (mV)
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (mA)
100
VF, FORWARD VOLTAGE DIFFERENTIAL (mV)
NSR15TW1
VO
18 nH
0.01
0.001
RF IN
0.0001
100 pF
3.3 nH
0.01
68 100 k
NSR15TW1
VO
100 pF
4.7 k
0.00001
0.001
–40
–35
–30
–25 –20
–15
–10
Pin, INPUT POWER (dBm)
–5
0.000001
–20 –15 –10
0
Figure 7. Typical Output Voltage versus Input Power,
Small Signal Detector Operating at 850 MHz
5
10 15
–5
0
Pin, INPUT POWER (dBm)
CONVERSION LOSS (dB)
10
9
8
7
0
2
4
6
8
10
LOCAL OSCILLATOR POWER (dBm)
12
Figure 9. Typical Conversion Loss versus L.O. Drive,
2.0 GHz
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3
25
30
Figure 8. Typical Output Voltage versus Input
Power, Large Signal Detector Operating at 915 MHz
12
6
–2
20
NSR15TW1
PACKAGE DIMENSIONS
SC–88 (SOT–363)
CASE 419B–01
ISSUE G
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
G
V
6
5
4
1
2
3
DIM
A
B
C
D
G
H
J
K
N
S
V
–B–
S
D 6 PL
0.2 (0.008)
B
M
M
N
J
C
H
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
0.012
0.016
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
0.30
0.40
STYLE 15:
PIN 1. ANODE
2. ANODE
3. ANODE
4. CATHODE
5. CATHODE
6. CATHODE
K
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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4
NSR15TW1/D