RFMD RF2155_06

RF2155
0
3V PROGRAMMABLE GAIN POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Typical Applications
• Analog Communication Systems
• Driver Stage for Higher Power Applications
• 900MHz Spread Spectrum Systems
• 3V Applications
• 400MHz Industrial Radios
Product Description
The RF2155 is a 3V medium power programmable gain
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in analog cellular phone transmitters or ISM
applications operating at 915MHz. The device is self-contained with the exception of the output matching network
and power supply feed line. A two-bit digital control provides 4 levels of power control, in 8dB steps.
-A0.009
0.004
0.158
0.150
0.021
0.014
0.069
0.064
0.392
0.386
0.244
0.230
0.050
0.060
0.054
8° MAX
0° MIN
0.035
0.016
Optimum Technology Matching® Applied
9
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
0.010
0.008
Package Style: Standard Batwing
Features
• Single 3V Supply
• 500mW CW Output Power
NC
1
16
G16
• 31dB Small Signal Gain
VCC1
2
15
G8
• Up to 60% Efficiency
VCC2
3
14
RF OUT
• Digitally Controlled Output Power
GND
4
13
GND
• 430MHz to 930MHz Frequency Range
GND
5
12
GND
GND1
6
11
RF OUT
RF IN
7
10
NC
PD
8
9
NC
Functional Block Diagram
Rev B8 060921
Ordering Information
RF2155
3V Programmable Gain Power Amplifier
RF2155PCBA-41X Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
2-173
RF2155
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Down Voltage (VPD)
DC Supply Current
Input RF Power
Output Load VSWR
Ambient Operating Temperature
Storage Temperature
Parameter
Rating
Unit
-0.5 to +5.5
-0.5 to +3.3
500
+10
10:1
-30 to +85
-40 to +150
VDC
V
mA
dBm
°C
°C
Specification
Min.
Typ.
Max.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit
T=25 °C, VCC =3.6V, VPD =2.8V,
ZLOAD =13Ω, PIN =0dBm, Freq=915MHz
Overall
Frequency Range
Maximum CW Output Power
Small Signal Gain
Second Harmonic
Third Harmonic
Fourth Harmonic
Input VSWR
CW Efficiency
Output Load VSWR
Condition
50
6:1
430 to 930
450
300
31
-30
-40
-36
2:1
56
MHz
mW
mW
dB
dBc
dBc
dBc
%
VCC =3.6V
VCC =3.0V
Without external second harmonic trap
All gain settings
G16=“high”, G8=“high”, PIN =0dBm
Spurious<-60dBc
Power Control
Power Down “ON”
Power Down “OFF”
PD Input Current
G16, G8 “ON”
G16, G8 “OFF”
G16, G8 Input Current
Output Power
2.7
0
2.2
0
0.8
+25.5
+15.0
+7.5
-2.5
2.8
0.5
3.7
2.5
0.3
1.0
+26.5
+18.5
+10.5
+1.5
Turn On/Off Time
3.0
0.8
5.0
3.0
0.5
1.6
+28.0
+21.0
+13.0
+4.0
100
V
V
mA
V
V
mA
dBm
dBm
dBm
dBm
ns
Voltage supplied to the input
Voltage supplied to the input
Only in “ON” state
Voltage supplied to the input
Voltage supplied to the input
Only in “ON” state
G16=“high”, G8=“high”, PIN =0dBm
G16=“high”, G8=“low”, PIN =0dBm
G16=“low”, G8=“high”, PIN =0dBm
G16=“low”, G8=“low”, PIN =0dBm
5.0
300
115
55
35
110
10
V
V
mA
mA
mA
mA
mA
μA
Specifications
Operating limits
G16=“high”, G8=“high”, PIN =0dBm
G16=“high”, G8=“low”, PIN =0dBm
G16=“low”, G8=“high”, PIN =0dBm
G16=“low”, G8=“low”, PIN =0dBm
G16=“high”, G8=“high”, No RF In
G16=“low”, G8=“low”, PD=“low”
Power Supply
Power Supply Voltage
3.6
3.0
Power Supply Current
20
2-174
225
90
37
25
50
1
Rev B8 060921
RF2155
Pin
1
2
Function
NC
VCC1
3
VCC2
4
GND
5
6
GND
GND1
7
RF IN
8
PD
9
10
11
12
13
14
15
NC
NC
RF OUT
GND
GND
RF OUT
G8
Rev B8 060921
Description
Interface Schematic
Not internally connected.
Positive supply for the first stage (driver) amplifier. This is an
unmatched transistor collector output. This pin should see an inductive
path to AC ground (VCC with a UHF bypassing capacitor). This inductance can be achieved with a short, thin microstrip line (approximately
equivalent to 0.4nH). At lower frequencies, the inductance value should
be larger (longer microstrip line) and VCC should be bypassed with a
larger bypass capacitor. This inductance forms a matching network
with the amplifier stages, setting the amplifier's frequency of maximum
gain. An additional 1μF bypass capacitor in parallel with the UHF
bypass capacitor is also recommended, but placement of this component is not as critical. A resistor of 39Ω from this pin to pin 3 is necessary to ensure stability under extreme output VSWR conditions.
Positive supply for the bias circuits. This pin should be bypassed with a
single UHF capacitor, placed as close as possible to the package.
Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance.
Same as pin 4.
Ground return for the first stage; this should be connected to a via very
close to the device.
Amplifier RF input. This is a 50Ω RF input port to the amplifier. To
improve the input match over all four gain control settings, an input
inductor of 6.8nH should be added. The amplifier does not contain
internal DC blocking and, therefore, should be externally DC blocked
before connecting to any device which has DC present or which contains a DC path to ground. A series UHF capacitor is recommended for
the DC blocking.
Power down control voltage. When this pin is at 0V, the device will be in
power down mode, dissipating minimum DC power. When this pin is at
3V the device will be in full power mode delivering maximum available
gain and output power capability. This pin should not, in any circumstance, be higher than 3.3V. This pin should also have an external UHF
and HF bypassing capacitor.
VCC1
RF IN
From Bias
Stages
See pin 2.
PD
To RF
Stages
Not internally connected.
Not internally connected.
Amplifier RF output. This is an unmatched collector output of the final
amplifier transistor. It is internally connected to pins 11 and 14 to provide low series inductance and flexibility in output matching. Bias for
the final power amplifier output transistor must also be provided
through one of these pins. Typically, pin 14 is used to supply bias. A
transmission line of approximately 500mils length, followed by a bypass
capacitor, is adequate. This pin can also be used to create a second
harmonic trap. A UHF and large tantalum (1μF) capacitor should be
placed on the power supply side of the bias inductor. Pin 11 should be
used for the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as
well as providing DC blocking at the output.
Same as pin 4.
RF OUT
From Bias
Stages
Same as pin 4.
Same as pin 11.
RF output power gain control 8dB bit (see specification table for logic).
The control voltage at this pin should never exceed 3.3V and a logic
high should be at least 2.7V. This pin should also have an external UHF
bypassing capacitor.
VCC2
Gxx
To RF
Stages
2-175
RF2155
Pin
16
Function
G16
Description
Interface Schematic
RF output power gain control 16dB bit (see specification table for logic).
The control voltage at this pin should never exceed 3.3V and a logic
high should be at least 2.7V. This pin should also have an external UHF
bypassing capacitor.
Same as pin 15.
Application Schematic
915 MHz
33 pF
VCC
1
16
2
15
33 pF
16 dB Ctrl
W=20, L=180 mil
33 pF
Board Material: FR-4 (Er=4.7)
h=30 mil
39 Ω
W=20, L=570 mil
3
14
4
13
5
12
6
11
8 dB Ctrl
VCC
33 pF
33 pF
Impedances are critical at pin
2, 7, 11, and 14
W=55, L=330 mil
33 pF 6.8 nH
50 Ω
33 pF
RF Out
3.9 pF
RF In
Power Down
7
10
8
9
33 pF
2-176
Rev B8 060921
RF2155
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1
P1-1
P1-3
P2
1
VB2
2
GND
3
PD
P2-1
P2-3
1
VCC
2
GND
3
VB1
2155400 Rev -
C14
1 μF
P2-1
C13
1 μF
C6
1 nF
C5
33 pF
R1
39 Ω
C4
33 pF
RF IN
J1
50 Ω μstrip
C1
33 pF
L1
6.8 nH
P1-3
C9
1 nF
Rev B8 060921
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
C7
33 pF
C12 1 nF
L=570 mil,
W=20 mil
C8
33 pF
P2-3
P1-1
C2
33 pF
L=330 mil,
W=55 mil
C2
33 pF
50 Ω μstrip
RF OUT
J2
C10
3.9 pF
C3
33 pF
2-177
RF2155
Evaluation Board Layout
Board Size 2.0” x 2.0”
2-178
Rev B8 060921
RF2155
Pout and Icc vs. Pin, State 11
(915 MHz, Vcc=3.6 V, Vpd=3.0 V)
30
Pout and Icc vs. Pin, State 10
(915 MHz, Vcc=3.6 V, Vpd=3.0 V)
300
25
300
Pout
Pout
20
250
200
15
150
10
15
200
10
150
5
100
0
50
100
5
50
-15
-10
-5
0
5
-5
10
0
-20
-15
-10
Pin (dBm)
5
10
Pout and Icc vs. Pin, State 01
(915 MHz, Vcc=3.6 V, Vpd=3.0 V)
20
300
10
250
5
300
Pout
Pout
15
250
Icc
Icc
10
200
5
150
0
-5
-10
-15
0
Pin (dBm)
Pout and Icc vs. Pin, State 01
(915 MHz, Vcc=3.6 V, Vpd=3.0 V)
-20
-5
-10
-5
0
5
-5
150
100
-10
100
50
-15
50
0
-20
Pout (dBm)
200
Icc (mA)
0
10
Icc (mA)
-20
Pout (dBm)
Icc (mA)
20
250
Icc
Pout (dBm)
Icc
Icc (mA)
Pout (dBm)
25
0
-20
-15
-10
Pin (dBm)
-5
0
5
10
Pin (dBm)
Pout and Efficiency vs. Vcc, Full Gain
(915 MHz, Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V)
Pout vs. Temperature, All Gain Settings
(Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V)
30
60.0
30
Bit1=1;Bit2=1
Pout
Efficiency
25
29
57.0
20
27
51.0
Pout (dBm)
54.0
Efficiency (%)
Pout (dBm)
Bit1=1;Bit2=0
28
15
10
Bit1=0;Bit2=1
5
26
48.0
Bit1=0;Bit2=0
0
25
45.0
3.0
3.5
4.0
4.5
Vcc (Volts)
Rev B8 060921
5.0
5.5
-5
-25
-5
15
35
55
75
95
Temperature (°C)
2-179