APTDF400AA170G Dual Common Anode diodes Power Module VRRM = 1700V IC = 400A @ Tc = 55°C Application K1 • • • • A Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features • • • • • • K2 • Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits A K2 • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(A V) Maximum Average Forward Current IF(RMS) IFSM RMS Forward Current Non-Repetitive Forward Surge Current Duty cycle = 50% Tc = 25°C Tc = 55°C Tj = 25°C Max ratings Unit 1700 V 480 400 500 1500 A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTDF400AA170G – Rev 1 June, 2006 K1 APTDF400AA170G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions VF Diode Forward Voltage IF = 400A IRM Maximum Reverse Leakage Current VR = 1700V Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Test Conditions IF = 400A VR = 900V di/dt = 4000A/µs Min Typ 2.2 2.1 Typ Tj = 25°C 572 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 704 80 140 280 400 Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 3500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 2.5 Unit V 750 1000 µA Max Unit ns µC A Max 0.095 150 125 100 5 3.5 280 Unit °C/W V °C N.m g www.microsemi.com 2-3 APTDF400AA170G – Rev 1 June, 2006 SP6 Package outline (dimensions in mm) APTDF400AA170G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage TJ=25°C 800 600 TJ=125°C 400 200 TJ=25°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 trr, Reverse Recovery Time (ns) 800 0 TJ=125°C V R=900V 700 600 500 800 A 400 400 A 300 200 A 200 0 5000 10000 15000 20000 25000 VF, Anode to Cathode Voltage (V) -diF/dt (A/µs) IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 320 TJ=125°C V R=900V 280 800 A 400 A 240 200 200 A 160 120 80 0 5000 10000 15000 20000 25000 -diF /dt (A/µs) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) 10 Trr vs. Current Rate of Charge 1000 IF, Forward Current (A) 1 1600 TJ=125°C V R=900V 1400 400 A 800 A 200 A 1200 1000 800 600 400 200 0 5000 10000 15000 20000 25000 -diF/dt (A/µs) Max. Average Forward Current vs. Case Temp. 600 Duty Cycle = 0.5 TJ=150°C 400 300 200 100 0 0 25 50 75 100 125 150 Case Temperature (ºC) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APTDF400AA170G – Rev 1 June, 2006 IF(AV) (A) 500