CYStech Electronics Corp. Spec. No. : C601E3 Issued Date : 2004.07.26 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1012E3 Features • Low VCE(sat), VCE(sat)=-0.4 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Wide SOA Symbol Outline BTA1012E3 TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=10ms BTA1012E3 Symbol Limits Unit VCBO VCEO VEBO IC(DC) IC(Pulse) IB Pd(TA=25℃) Pd(TC=25℃) Tj Tstg -60 -50 -5 -5 -8 -1 2 25 150 -55~+150 V V V *1 A A W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C601E3 Issued Date : 2004.07.26 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCEO ICBO IEBO *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT ton tstg tf Min. -50 70 30 10 - Typ. 0.2 1 0.2 Max. -10 -10 -0.4 -1.2 240 - Unit V µA µA V V MHz µs µs µs Test Conditions IC=-10mA, IB=0 VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-3A, IB=-0.15A IC=-3A, IB=-0.15A VCE=-1V, IC=-1A VCE=-1V, IC=-3A VCE=-4V, IC=-1A, f=1MHz VCC=-30V, IC=-3A, IB1=-IB2=0.15A, PW=20µs *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Range BTA1012E3 O 70~140 Y 120~240 CYStek Product Specification Spec. No. : C601E3 Issued Date : 2004.07.26 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Current Gain---HFE Saturation Voltage---(mV) VCE=4V VCE(SAT)@IC=10IB 100 10 1 100 1 10 100 1000 Collector Current---IC(mA) 1 10000 10000 Power Derating Curve On Voltage vs Collector Current 2.5 Power Dissipation---PD(W) 10000 VBE(on)@VCE=4V On Voltage---(mV) 10 100 1000 Collector Current---IC(mA) 1000 2 1.5 1 0.5 0 100 0.1 1 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 200 Ambient Temperature---TA(℃) Power Derating Curve Power Dissipation---PD(W) 30 25 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC(℃) BTA1012E3 CYStek Product Specification Spec. No. : C601E3 Issued Date : 2004.07.26 Revised Date : Page No. : 4/4 CYStech Electronics Corp. TO-220AB Dimension A Marking: B D E C A1012 H K M I 3 G N 2 1 4 Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector O P 3-Lead TO-220AB Plastic Package CYStek Package Code: E3 *: Typical Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 DIM A B C D E G H Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1012E3 CYStek Product Specification