MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. O U TLIN E D R AW IN G U nit:m illim eters (inches) 24 +/- 0.3 FEATURES 2 M IN Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=6.4-7.2 GHz High power gain GLP = 8 dB (TYP.) @ f=6.4-7.2GHz High power added efficiency PAE = 28 % (TYP.) @ f=6.4-7.2GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. 0.6 +/- 0.15 (1 ) 8 .0 +/- 0 .2 (2 ) 2 M IN 1 7 .4 +/- 0 .2 R 1.2 (3 ) 0 .1 +/- 0 .0 5 APPLICATION 16.7 4 .3 +/- 0 .4 item 01 : 6.4-7.2 GHz band power amplifier item 51 : 6.4-7.2 GHz band digital radio communication QUALITY GRADE 1 .4 IG 2 .4 +/- 0 .2 20.4 +/- 0.2 RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 8.0 (A) RG=25 (ohm) G F -38 ABSOLUTE MAXIMUM RATINGS Symbol (1 ) G AT E (2 ) S O U R C E (F IAN G E ) (3 ) D R AIN Ratings Unit VGDO Gate to drain voltage -15 V Mitsubishi Electric Corporation puts the maximum effort into VGSO Gate to source voltage -15 V making semiconductor products better and more reliable, Drain current 25 A but there is always the possibility that trouble may occur IGR Reverse gate current -80 mA with them. Trouble with semiconductors may lead to personal IGF Forward gate current 168 mA injury, fire or property damage. Remember to give due PT Total power dissipation 150 W Tch Channel temperature 175 deg.C with appropriate measures such as (1)placement of -65 / +175 deg.C substitutive, auxiliary circuits, (2)use of non-flammable ID Parameter (Ta=25 deg.C) Tstg Storage temperature *1 : Tc=25 deg.C IDSS Gm consideration to safety when making your circuit designs, material or (3)prevention against any malfunction or mishap. ELECTRICAL CARACTERISTICS Symbol < Keep safety first in your circuit designs! > Parameter (Ta=25 deg.C) Limits Test conditions Unit Min. Typ. Max. Saturated drain current VDS=3V, VGS=0V - 24 - A Transconductance VDS=3V, ID=6.4A - 8 - V VGS(off) Gate to source cut-off voltage Output power at 1dB gain P1dB compression GLP Linear power gain PAE Power added efficiency IM3 3rd order IM distortion Rth(ch-c) Thermal resistance VDS = 3V , ID = 120mA - - -5 V 44.5 45 - dBm 7 8 - dB - 35 - % -42 -45 - dBc - - 1.0 deg.C/W VDS=10V, ID(RF off)=8.0A, f=6.4-7.2GHz *1 *2 Delta Vf method *1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25deg.C) Po , PAE vs. Pin P1dB ,GLP vs. f 50 VDS=10(V) IDS=8(A) 11 45 10 GLP 44 9 43 8 42 OUTPUT POWER Po(dBm) P1dB 46 50 VDS=10(V) IDS=8(A) f=6.8(GHz) Po 45 40 40 30 35 20 PAE 30 7 10 25 6.3 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 7.3 0 20 25 30 35 40 POWER ADDED EFFICIECY PAE (%) 12 LINEAR POWER GAIN GLP(dB) OUTPUT POWER P1dB (dBm) 47 45 INPUTPOWER Pin(dBm) FREQUENCY f(GHz) Po,IM3 vs.Pin 40 0 VDS=10(V) IDS=8(A) f=7.2(GHz) Delta f=10(MHz) Po -10 36 -20 32 -30 -40 28 IM3 24 -50 20 -60 16 IM3 (dBc) OUTPUT POWER Po (dBm S.C.L.) 44 -70 18 20 22 24 26 28 30 32 34 36 INPUT POWER Pin (dBm S.C.L.) S PARAMETERS (Ta=25deg.C,VDS=10V,ID=8.0A) f (GHz) 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 Magn. 0.66 0.61 0.56 0.50 0.43 0.35 0.24 0.15 0.01 S11 Angle(deg.) 100 84 70 57 42 27 12 1 -10 Magn. 2.39 2.43 2.47 2.54 2.59 2.66 2.73 2.75 2.72 S Parameters (TYP.) S21 Angle(deg.) Magn. -106 0.057 -122 0.065 -138 0.071 -154 0.079 -170 0.088 173 0.095 155 0.101 143 0.105 123 0.109 MITSUBISHI ELECTRIC S12 Angle(deg.) -171 174 160 145 131 116 100 88 70 Magn. 0.32 0.34 0.35 0.35 0.34 0.31 0.27 0.24 0.20 S22 Angle(deg.) 74 64 52 40 27 12 -8 -27 -61 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004