Point Source Infrared Emitting Diode OP230WPS • • • • • • Point Source Symmetrical beam pattern Flat lens for wide beam angle Ideal for use with collimating lenses Wide operating temperature range TO-46 metal can package Product Photo Here The OP230WPS is an 850nm GaAlAs, point source, infrared emitting diode mounted in a hermetic flat lens, TO-46 metal can package. The advantage of this emitter is that it emits photons from a 0.004” area that is aligned with the package optical centerline. Unlike other GaAlAs emitters, this device performs more like an ideal point source and is suitable for use with lenses to create collimated light sources that can be used in and a variety of sensing applications. Applications include: • Optical Encoders • Light Curtains • Optical Triangulation Systems • Bar Code Readers 1—ANODE 2—CATHODE Pb RoHS Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com A subsidiary of TT electronics plc Point Source Infrared Emitting Diode OP230WPS Absolute Maximum Ratings TA = 25o C unless otherwise noted Storage Temperature -55° C to +150° C Operating Temperature -40° C to +125° C Lead Soldering Temperature (1/16” (1.6mm) from case for 5 seconds with soldering iron) 260° C (2) Forward Current 100 mA Peak Forward current (2 µs pulse width, 0.1% Duty Cycle) 3.0 A Reverse DC Voltage 2.0 V Power Dissipation 100 mW (3) Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL Ee(APT) PARAMETER Apertured Irradiance MIN TYP MAX UNITS CONDITIONS mW/cm2 IF = 100 mA (4) 0.50 VF Forward Voltage 2.2 V IF = 100 mA IR Reverse Current 10 µA VR = 2.5 V λP Peak Wavelength 850 nm IF = 20 mA β Spectral Bandwidth @50% IF=20mA 25 nm IF = 20 mA Emission Angle at Half Power ±45 tr Optical Rise Time 20 ns tf Optical Fall Time 20 ns θHP Notes: (1) (2) (3) (4) Degrees IF = 20 mA IF(Peak) = 100 mA, Pulse Width=10µs, Duty Cycle=10% All parameters tested using pulse technique. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. Derate at 1mW/°C above 25°C. Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250” (6.35mm) in diameter and perpendicular to and centered to the mechanical axis of the emitting surface at a distance of 0.466” (11.84mm). Ee(APT) is not necessarily uniform within the measured area. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com Issue 1.1 09.05 Page 2 of 3 Point Source Infrared Emitting Diode OP230WPS Forward Voltage vs. Forward Current Relative Radiant Intensity vs. Forward Current 2.0 IF = 0 to 100mA 100% IF = 0 to 100mA Pulse Width = 100µS Duty Cycle = 0.1% Pulse Width = 100µS Duty Cycle = 0.1% 1.6 Forward Voltage (V) Relative Radiant Intensity 80% 60% 40% 0.8 20% 0.4 0% 0.0 0 20 40 60 80 0 100 40 60 80 100 Forward Current (mA) Relative Radiant Intensity vs. Angular Displacement Relative Radiant Intensity vs. Ambient Temperature 120% IF = 100mA Pulse Width = 100µS Duty Cycle = 0.1% Normalized at 25°C 110% Relative Radiant Intensity 80% 60% 40% 20% 100% 90% 80% 70% 0% -90 20 Forward Current (mA) 100% Relative Radiant Intensity 1.2 60% -60 -30 0 30 60 90 Angular Displacement (Degrees) OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com -50 -25 0 25 50 75 100 125 Temperature (°C) Issue 1.1 09.05 Page 2 of 3