DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low-barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead (Pb)-free, RoHS-compliant, and Green ● ● Description Skyworks silicon Schottky diode chips are intended for use as detector and mixer devices in hybrid integrated circuits at frequencies from below 100 MHz to higher than 40 GHz. Skyworks “Universal Chip” design features a 4-mil-diameter bond pad that is offset from the semiconductor junction preventing damage to the active junction as a result of wire bonding. As power-sensing detectors, these Schottky diode chips all have the same voltage sensitivity so long as the output video impedance is much higher than the video resistance of the diode. Figure 1 shows the expected detected voltage sensitivity as a function of RF source impedance in an untuned circuit. Note that sensitivity is substantially increased by transforming the source impedance from 50 Ω to higher values. Maximum sensitivity occurs when the source impedance equals the video resistance. P-type Schottky diodes generate lower 1/F noise and are preferred for Doppler mixers and biased detector applications. The bond pad for the P-type Schottky diode is the cathode. N-type Schottky diodes have lower parasitic resistance, RS, and will perform with lower conversion loss in mixer circuits. The bond pad for the N-type Schottky diode is the anode. NEW Skyworks Green™ products are lead (Pb)-free, RoHS (Restriction of Hazardous Substances)-compliant, conform to the EIA/EICTA/JEITA Joint Industry Guide (JIG) Level A guidelines, and are free from antimony trioxide and brominated flame retardants. In a detector circuit operating at zero bias, depending on the video load impedance, a ZBD device with RV less than 10 kΩ may be more sensitive than a low-barrier diode with RV greater than 100 kΩ. Applying forward bias reduces the diode video resistance as shown in Figure 2. Lower video resistance also increases the video bandwidth but does not increase voltage sensitivity, as shown in Figure 3. Biased Schottky diodes have better temperature stability and also may be used in temperature compensated detector circuits. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 200139 Rev. E • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • September 5, 2007 1 DATA SHEET • SILICON SCHOTTKY DIODE CHIPS Electrical Specifications at 25 °C CJ(1) (pF) RT(2) Ω) (Ω VF @ 1 mA (mV) VB(3) (V) RV @ Zero Ω) Bias (kΩ Max. Max. Min.–Max. Min. Typ. Outline Drawing Part Number Barrier Junction Type CDC7630-000 ZBD P 0.25 30 135–240 1 5.5 571-006 CDC7631-000 ZBD P 0.15 80 150–300 2 7.2 571-006 CDB7619-000 Low P 0.1 40 275–375 2 735 571-006 CDB7620-000 Low P 0.15 30 250–350 2 537 571-006 CDF7621-000 Low N 0.1 20 270–350 2 680 571-011 CDF7623-000 Low N 0.3 10 240–300 2 245 571-011 1. CJ for low barrier diodes specified at 0 V. CJ for ZBDs specified at 0.15 V reverse bias. 2. RT is the slope resistance at 10 mA. RS Max. may be calculated from: RS = RT - 2.6 x N. 3. VB for low barrier diodes is specified at 10 µA. VB for ZBDs is specified at 100 µA. Typical Performance Data 10000 Detector Voltage RF Source Impedance Detected Voltage (mV) 1000 PINPUT RFC Video Load Impedance 500 Ω 100 200 Ω 100 Ω Zero Biased Detector 50 Ω 10 25 Ω Detector Voltage 1 RF Source Impedance 0.1 -40 -30 -20 -10 0 RFC PINPUT Video Load Impedance 10 Input Power (dBm) Biased Detector Figure 1. Detected Voltage vs. Input Power and RF Source Impedance 100000 10000 0 dBm +10 dBm Detected Voltage (mV) Video Resistance (Ω) 1000 Low Barrier 10000 ZBD 1000 100 10 1 -30 dBm -20 dBm 0.1 -10dBm 0.01 100 1 10 100 Forward Bias (µA) Figure 2. Video Resistance vs. Forward Bias Current 0.001 0.001 0.01 0.1 1 Forward Current (mA) Figure 3. Detected Voltage vs. Forward Current Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 2 September 5, 2007 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200139 Rev. E 10 DATA SHEET • SILICON SCHOTTKY DIODE CHIPS SPICE Model Parameters Parameter CDB7619 CDB7620 CDF7621 CDF7623 CDC7630 CDC7631 IS 3.70E-08 5.40E-08 4.0E-08 1.1E-07 5.0E-06 3.8E-06 Units A RS 9 14 12 6 20 51 Ω N 1.05 1.12 1.05 1.04 1.05 1.05 TT 1E-11 1E-11 1E-11 1E-11 1E-11 1E-11 s CJ0 0.08 0.15 0.1 0.22 0.14 0.08 pF M 0.35 0.35 0.35 0.32 0.4 0.4 EG 0.69 0.69 0.69 0.69 0.69 0.69 XTI 2 2 2 2 2 2 eV FC 0.5 0.5 0.5 0.5 0.5 0.5 BV 2 4 3 2 2 2 V IBV 1E-05 1E-05 1E-05 1E-05 1E-04 1E-04 A VJ 0.495 0.495 0.495 0.495 0.34 0.34 V Outline Drawing Absolute Maximum Ratings 571-006 (Cathode Bond Pad), 571-011 (Anode Bond Pad) Bonding Pad Diameter 0.0035–0.0045 0.013 (0.33 mm) 0.011 (0.28 mm) Characteristic Reverse voltage (VR) Value Voltage rating Forward current (IF) 50 mA Power dissipation (PD) 75 mW Storage temperature (TST) -65 °C to +150 °C Operating temperature (TOP) -65 °C to +150 °C Electrostatic Discharge (ESD) Human Body Mode (HBM) Class 0 Electrostatic Discharge (ESD) Charged Device Model (CDM) Class C4 Performance is guaranteed only under the conditions listed in the specifications table and is not guaranteed under the full range(s) described by the Absolute Maximum specifications. Exceeding any of the absolute maximum/minimum specifications may result in permanent damage to the device and will void the warranty. 0.013 (0.33 mm) 0.011 (0.28 mm) 0.0085 (0.216 mm) 0.0065 (0.165 mm) CAUTION: Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 200139 Rev. E • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • September 5, 2007 3 DATA SHEET • SILICON SCHOTTKY DIODE CHIPS Copyright © 2002, 2003, 2004, 2005, 2006, 2007, Skyworks Solutions, Inc. All Rights Reserved. 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Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 4 September 5, 2007 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200139 Rev. E