TOSHIBA MT3S106FS

MT3S106FS
TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
MT3S106FS
VCO OSCILLETOR STAGE
VHF-UHF Low Noise Amplifier Application
Low Noise Figure :NF=1.2dB (@f=2GHz)
•
High Gain:|S21e|2=10dB (@f=2GHz)
0.6 ±0.05
•
3
2
0.1±0.05
1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
13
V
Collector-Emitter voltage
VCEO
6
V
Emitter-Base voltage
VEBO
1
V
Collector-Current
IC
80
mA
Base-Current
IB
20
mA
PC(Note 1)
100
mW
Tj
150
°C
Tstg
−55~150
°C
Collector Power dissipation
Junction temperature
Storage temperature Range
0.1±0.05
+0.02
-0.04
41
2
0.48
3
0.8±0.05
1
0.1±0.05
Marking
0.2±0.05
FEATURES
1.0±0.05
0.15±0.05
0.35±0.05
Unit:mm
1.BASE
2.EMITTER
3.COLLECTOR
fSM
JEDEC
JEITA
TOSHIBA
Weight: 0.0006 g
2-1E1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2
Note 1: Device mounted on a glass-epoxy PCB(1.0 cm x 1.0 mm (t))
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MT3S106FS
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition Frequency
Insertion Gain
Noise Figure
Symbol
fT
Test Condition
VCE=1V, IC=10mA
Min
Typ.
Max
Unit
6.5
8.5
-
GHz
2
VCE=1V, IC=10mA, f=2GHz
-
8
-
dB
2
|S21e| (2)
VCE=3V, IC=20mA, f=2GHz
8.5
10
-
dB
NF
VCE=1V, IC=10mA, f=2GHz
-
1.2
2
dB
Min
Typ.
Max
Unit
|S21e| (1)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector Cut-off Current
ICBO
VCB=5V, IE=0
-
-
0.1
µA
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
-
-
0.5
µA
DC Current Gain
hFE
VCE=1V, IC=5mA
110
-
160
-
Reverse Transistor Capacitance
Cre
VCB=1V, IE=0, f=1MHz (Note )
-
0.5
0.7
pF
Note :
Cre is measured by 3 terminal method with capacitance Bridge.
Caution:
This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of
fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
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MT3S106FS
IC - VCE
1000
Common emitter
Ta=25°C
Common emitter
VCE=1V
Ta=25°C
40
DC current gain hFE
Collector-current IC(mA)
50
hFE - IC
IB=
300μA
30
250μA
200μA
20
150μA
100μA
10
100
50μA
10
0
0
1
2
3
4
1
5
Collector-emitter voltage VCE(V)
10
Collector-current IC(mA)
|S21e|2- IC
IC – VBE
14
Common emitter
VCE=1V
10 Ta=25°C
Insertion gain |S21e|2(dB)
Collector-current IC(mA)
100
1
0.1
0.01
0.001
Transition frequency fT(GHz)
16
0.2
0.4
0.6
0.8
VCE=3V
10
8
VCE=1V
6
4
2
10
100
Base-emitter voltage VBE(V)
Collector-current IC(mA)
fT - IC
Cre, Cob - VCB
12
10
8
6
4
2
0
1
12
1
VCE=1V
Ta=25°C
14
f=2GHz
Ta=25°C
0
1
Reverse transfer capacitance Cre(pF),
Output capacitance Cob(pF)
0
100
10
100
Collector-current IC(mA)
1.5
f=1MHz
Ta=25°C
1
Cob
Cre
0.5
0
0.1
1
10
Collector-base voltage VCB(V)
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NF, Ga - IC
4
10
Ga
3
2
NF
5
1
0
1
10
0
100
Collector power dissipation PC(mW)
Noise figure NF(dB)
5
150
15
VCE=1V
f=2GHz
Ta=25°C
Associated gain Ga (dB)
6
PC-Ta
The device is mounted on a
glass-epoxy printed circuit board
(1.0cm2 X 1mm(t))
125
100
75
50
25
Device only
0
0
25
50
75
100 125 150 175
Ambient temperature Ta(℃)
Collector-current IC(mA)
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MT3S106FS
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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