SDR10D thru SDR10M and SDR10DSMS thru SDR10MSMS Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 10 AMPS 200 ─ 1000 VOLTS 5 µs STANDARD RECOVERY RECTIFIER Designer’s Data Sheet Part Number/Ordering Information 1/ SDR10 __ __ __ │ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ S = S Level │ └ Package Type __ = Axial Leaded SMS = Surface Mount Square Tab Voltage/Family D = 200V G = 400V J = 600V K = 800 V M = 1000 V • • • • • • • • • • • FEATURES: Standard Recovery: 5 µs maximum 4/ PIV to 1000 Volts Hermetically Sealed Low Reverse Leakage Current Single Chip Construction High Surge Rating Replaces Larger DO-4 Rectifiers Low Thermal Resistance Available in Axial & Square Tab Versions TX, TXV, and S-Level Screening Available 2/ Faster Recovery Devices Available - Contact Factory MAXIMUM RATINGS 3/ RATING SDR10D & SDR10DSMS SDR10G & SDR10GSMS SDR10J & SDR10JSMS SDR10K & SDR10KSMS SDR10M & SDR10MSMS Peak Repetitive Reverse Voltage And DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TA = 25°C ) Peak Surge Current (8.3 ms pulse, half sine wave, superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25°C) Operating & Storage Temperature Thermal Resistance Junction to Lead for Axial, L =.125" Junction to End Tab for Surface Mount NOTES: SYMBOL VALUE UNIT VRRM VRWM VR 200 400 600 800 1000 Volts IO 10.0 Amps IFSM 150 Amps -65 to +175 °C 8 4 °C/W TJ and TSTG RθJL RθJE Axial Leaded 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. SMS 4/ IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: R00001C DOC SDR10D thru SDR10M and SDR10DSMS thru SDR10MSMS Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS 3/ CHARACTERISTICS SYMBOL VALUE UNIT MAX Instantaneous Forward Voltage Drop IF = 10.0 Adc, 300-500μs pulse Reverse Leakage Current Rated VR, 300μs pulse minimum TA = +25°C TA = -55°C VF1 VF2 1.25 1.40 Vdc TA = +25°C TA =+100°C IR1 IR2 5 200 μA CJ 80 pF trr 5 µs Junction Capacitance VR = 10 Vdc, f = 1MHz, TA = 25°C Reverse Recovery Time IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C Package Outlines: DIMENSIONS (inches) DIM. A B C D Minimum --.210 .037 1.000 DIMENSIONS (inches) Maximum .170 .250 .043 --- AXIAL NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DIM. A B C D Minimum .170 .260 .020 .002 Maximum .180 .300 .030 --- SMS DATA SHEET #: R00001C DOC