MPS6729 Preferred Device One Watt Amplifier Transistor PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –80 Vdc Collector–Base Voltage VCBO –80 Vdc Emitter–Base Voltage VEBO –4.0 Vdc Collector Current – Continuous IC –500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watt mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watts mW/°C TJ, Tstg –55 to +150 °C Operating and Storage Junction Temperature Range 2 BASE 1 EMITTER TO–92 (TO–226) CASE 29–10 STYLE 1 1 THERMAL CHARACTERISTICS Characteristic 2 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 125 °C/W MARKING DIAGRAM Thermal Resistance, Junction to Case RJC 50 °C/W MPS 6729 YWW Y = Year WW = Work Week ORDERING INFORMATION Device MPS6729 Package Shipping TO–92 Bulk Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 – Rev. 0 1 Publication Order Number: MPS6729/D MPS6729 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage (Note 1.) (IC = –1.0 mAdc, IB = 0) V(BR)CEO –80 – Vdc Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO –80 – Vdc Emitter–Base Breakdown Voltage (IE = –10 Adc, IC = 0) V(BR)EBO –5.0 – Vdc Collector Cutoff Current (VCB = –60 Vdc, IE = 0) ICBO – –0.1 µAdc Emitter Cutoff Current (VEB = –5.0 Vdc, IC = 0) IEBO – –10 µAdc 80 50 – 250 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 1.) DC Current Gain (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –250 mAdc, VCE = –1.0 Vdc) hFE – Collector–Emitter Saturation Voltage (IC = –250 mAdc, IB = –10 mAdc) VCE(sat) – –0.5 Vdc Base–Emitter On Voltage (IC = –250 mAdc, VCE = –1.0 Vdc) VBE(on) – –1.2 Vdc Collector–Base Capacitance (VCB = –10 Vdc, f = 1.0 MHz) Ccb – 30 pF Small–Signal Current Gain (IC = 200 mA, VCE = 5.0 V, f = 20 MHz) hfe 2.5 25 SMALL–SIGNAL CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 MPS6729 400 hFE, DC CURRENT GAIN TJ = 125°C 200 VCE = -1.0 V 25°C -55°C 100 80 60 40 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 -200 -300 -500 -1.0 -1.0 TJ = 25°C TJ = 25°C -0.8 -0.8 -0.6 IC = -10 mA -50 mA -100 mA -250 mA V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain -500 mA -0.4 -0.2 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA) -10 -20 0 -0.5 -1.0 -50 Figure 2. Collector Saturation Region -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) Figure 3. “On” Voltages http://onsemi.com 3 -500 MPS6729 100 θ VB, TEMPERATURE COEFFICIENT (mV/°C) -0.8 70 -1.2 C, CAPACITANCE (pF) 50 -1.6 θVB for VBE -2.0 30 20 10 -2.4 Cobo 7.0 -2.8 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) 5.0 -0.1 -500 -0.2 Figure 4. Base–Emitter Temperature Coefficient -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -50 -100 Figure 5. Capacitance 200 VCE = -2.0 V TJ = 25°C IC, COLLECTOR CURRENT (mA) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TJ = 25°C Cibo 100 DUTY CYCLE ≤ 10% -2 k 1.0 ms -1 k 100 µs -500 70 TA = 25°C TC = 25°C -200 50 -100 30 -50 -20 20 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) -10 -1.0 -200 Figure 6. Current–Gain – Bandwidth Product dc 1.0 s dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW55 MPSW56 -2.0 -5.0 -10 -20 -60 -80 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Active Region – Safe Operating Area PACKAGE DIMENSIONS http://onsemi.com 4 MPS6729 TO–92 (TO–226) CASE 29–10 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X–X N INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 5 MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --- MPS6729 Notes http://onsemi.com 6 MPS6729 Notes http://onsemi.com 7 MPS6729 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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