ADPOW MRF586

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF586
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
Silicon NPN, TO-39 packaged VHF/UHF Transistor
•
Ft = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,
•
•
G
U max
|S21|
2
1. Emitter
2. Base
3. Collector
= 12.5dB (typ) @ 300 MHz, 15v, 40mA
= 12.5dB (typ) @ 300 MHz, 15v, 40mA
TO-39
DESCRIPTION:
The MRF586 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier,
pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter
17
V
VCBO
Collector-Base Voltage
35
V
VEBO
Emitter-Base Voltage
3.0
V
PD
Total Device Dissipation
1.0
W
IC
Collector Current
200
mA
1.0
5.71
Watts
mW/°C
Thermal Data
PD
Total Device Dissipation @ TA = 25°C
Derate above 25°C
ELECTRICAL SPECIFICATIONS
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF586
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCEO
IC = 5.0 mA
17
-
-
V
BVEBO
IE = 0.1 mA
3.0
-
-
V
BVCBO
IC =1.0 mA
30
-
-
V
ICBO
VCB = 10 V
-
50
-
µA
HFE
VCE = 5.0 V
40
-
200
-
IC = 50 mA
DYNAMIC
Symbol
Test Conditions
fT
f = 300 MHz
IC = 90 mA
COB
f = 1.0MHz
VCB = 10V
VCE = 14 V
Value
Min.
Typ.
Max.
-
3.0
-
3.0
Unit
GHz
pf
FUNCTIONAL
Symbol
G
Test Conditions
Value
Min.
Typ.
Max.
Unit
U max
Maximum Unilateral Gain
(1)
IC = 40 mA, VCE = 15V, f =
300 MHz
-
12.5
-
dB
MAG
Maximum Available Gain
IC = 40 mA, VCE = 15V, f =
300 MHz
-
13.5
-
dB
IC = 40 mA, VCE = 15V, f =
300 MHz
10
11.5
-
dB
|S21|
2
Insertion Gain
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF586
Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 40 mA
f
S11
S21
S12
S22
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
100
.096
107
10.28
103
.053
84
.479
-40
200
.129
114
5.58
89
.104
83
.361
-49
300
.165
108
3.94
79
.160
76
.356
-56
400
.185
115
3.04
71
.192
74
.388
-71
500
.237
115
2.64
67
.246
75
.384
-79
600
.247
112
2.42
60
.288
71
.408
-82
700
.247
113
2.26
54
.326
69
.417
-84
800
.238
118
2.06
48
.334
67
.432
-87
900
.260
119
1.97
47
.369
71
.420
-91
1000
.246
116
2.06
43
.405
67
.444
-92
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
∠φ
MRF586
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.