MCR22-6, MCR22-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. • 150 Amperes for 2 µs Safe Area • High dv/dt • Very Low Forward “On” Voltage at High Current • Low-Cost TO-226AA (TO-92) • Device Marking: Device Type, e.g., MCR22–6, Date Code http://onsemi.com SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) A Rating Symbol Peak Repetitive Off–State Voltage (RGK = IK, TJ = 40 to +110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR22–6 MCR22–8 VDRM, VRRM On-State Current RMS (180° Conduction Angles, TC = 80°C) IT(RMS) 1.5 Amps ITSM 15 Amps * Peak Non-repetitive Surge Current, TA = 25°C (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 msec, TA = 25°C) Forward Average Gate Power (t = 8.3 msec, TA = 25°C) Value Volts 400 600 I2t 0.9 A2s PGM 0.5 Watt PG(AV) 0.1 Watt IFGM Reverse Peak Gate Voltage (Pulse Width ≤ 1.0 µs, TA = 25°C) VRGM 5.0 Volts TJ –40 to +110 °C Storage Temperature Range Tstg 0.2 Amp °C –40 to +150 (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Semiconductor Components Industries, LLC, 2000 May, 2000 – Rev. 3 1 1 2 3 TO–92 (TO–226AA) CASE 029 STYLE 10 PIN ASSIGNMENT 1 Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TA = 25°C) Operating Junction Temperature Range @ Rated VRRM and VDRM K Unit Cathode 2 Gate 3 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR22–6/D MCR22–6, MCR22–8 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 50 °C/W Thermal Resistance, Junction to Ambient RθJA 160 °C/W TL +260 °C Lead Solder Temperature (Lead Length 1/16″ from case, 10 s Max) q ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit — — — — 10 200 µA µA VTM — 1.2 1.7 Volts TC = 25°C TC = –40°C IGT — — 30 — 200 500 µA TC = 25°C TC = –40°C VGT — — — — 0.8 1.2 Volts VGD 0.1 — — Volts — — 2.0 — 5.0 10 — 25 — Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1000 Ohms) IDRM, IRRM TC = 25°C TC = 110°C ON CHARACTERISTICS Peak Forward On–State Voltage(1) (ITM = 1 A Peak) Gate Trigger Current (Continuous dc)(2) (VAK = 6 Vdc, RL = 100 Ohms) Gate Trigger Voltage (Continuous dc)(2) (VAK = 7 Vdc, RL = 100 Ohms) Gate Non–Trigger Voltage(1) (VAK = 12 Vdc, RL = 100 Ohms) TC = 110°C Holding Current (VAK = 12 Vdc, Gate Open) Initiating Current = 200 mA TC = 25°C TC = –40°C IH mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off–State Voltage (TC = 110°C) dv/dt v (1) Pulse Width = 1.0 ms, Duty Cycle 1%. (2) RGK Current not included in measurement. http://onsemi.com 2 V/µs MCR22–6, MCR22–8 Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM IDRM Peak Repetitive Off State Forward Voltage VRRM IRRM Peak Repetitive Off State Reverse Voltage Anode + VTM on state Peak Forward Blocking Current IH IRRM at VRRM Peak Reverse Blocking Current VTM IH Peak on State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode – TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (° C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) CURRENT DERATING 140 100 α = 180° α = CONDUCTION ANGLE 60 dc 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 140 120 100 80 60 dc 40 α = 180° α = CONDUCTION ANGLE 20 0 0 Figure 1. Maximum Case Temperature 0.2 0.4 0.6 0.8 IT(AV), AVERAGE ON-STATE CURRENT (AMP) Figure 2. Maximum Ambient Temperature http://onsemi.com 3 1.0 MCR22–6, MCR22–8 5.0 3.0 TJ = 110°C 2.0 25°C I T , INSTANTANEOUS ON-STATE CURRENT (AMP) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0 0.5 1.0 1.5 2.0 2.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. Typical Forward Voltage 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 t, TIME (ms) Figure 4. Thermal Response http://onsemi.com 4 500 1000 2000 5000 10000 MCR22–6, MCR22–8 TYPICAL CHARACTERISTICS 100 I GT GATE TRIGGER CURRENT ( µA) VAK = 7.0 V RL = 100 0.7 0.6 0.5 0.4 0.3 –75 –50 –25 0 25 50 100 110 75 50 30 20 10 5.0 3.0 2.0 1.0 –40 –20 0 20 60 80 100 110 TJ JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Voltage Figure 6. Typical Gate Trigger Current 2.0 10 1.8 I H , HOLDING CURRENT (mA) 40 TJ, JUNCTION TEMPERATURE (°C) P(AV) MAXIMUM AVERAGE POWER DISSIPATION (WATTS) VGT, GATE TRIGGER VOLTAGE (VOLTS) 0.8 1.6 VAK = 12 V RL = 100 Ω 30° 1.4 5.0 60° 90° 120 ° 180° 1.2 1.0 dc 0.8 0.6 2.0 0.4 0.2 1.0 –40 –20 0 20 40 60 80 100 110 0 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ, JUNCTION TEMPERATURE (°C) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 7. Typical Holding Current Figure 8. Power Dissipation http://onsemi.com 5 1.4 1.6 MCR22–6, MCR22–8 TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL H2A H2A H2B H2B H W2 H4 H5 T1 L1 H1 W1 W L T T2 F1 F2 P2 D P2 P1 P Figure 9. Device Positioning on Tape Specification Inches Symbol Item Millimeter Min Max Min Max 0.1496 0.1653 3.8 4.2 D Tape Feedhole Diameter D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51 Component Lead Pitch 0.0945 0.110 2.4 2.8 F1, F2 H Bottom of Component to Seating Plane H1 Feedhole Location .059 .156 1.5 4.0 0.3346 0.3741 8.5 9.5 1.0 H2A Deflection Left or Right 0 0.039 0 H2B Deflection Front or Rear 0 0.051 0 1.0 0.7086 0.768 18 19.5 H4 Feedhole to Bottom of Component H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5 L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11 L1 Lead Wire Enclosure 0.09842 — 2.5 — P Feedhole Pitch 0.4921 0.5079 12.5 12.9 P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95 0.06 0.08 0.15 0.20 — 0.0567 — 1.44 P2 T Adhesive Tape Thickness T1 Overall Taped Package Thickness T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65 W Carrier Strip Width 0.6889 0.7481 17.5 19 W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3 W2 Adhesive Tape Position .0059 0.01968 .15 0.5 NOTES: 1. Maximum alignment deviation between leads not to be greater than 0.2 mm. 2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 3. Component lead to tape adhesion must meet the pull test requirements. 4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more than 1 consecutive missing component is permitted. 7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes. http://onsemi.com 6 MCR22–6, MCR22–8 ORDERING & SHIPPING INFORMATION: MCR22 Series packaging options, Device Suffix Europe Equivalent U.S. MCR22–8RL1 MCR22–6,8 MCR22–6RLRA MCR22–6RLRP MCR22–8ZL1 Shipping Description of TO92 Tape Orientation Radial Tape and Reel (2K/Reel) Bulk in Box (5K/Box) Radial Tape and Reel (2K/Reel) Radial Tape and Fan Fold Box (2K/Box) Radial Tape and Fan Fold Box (2K/Box) Flat side of TO92 and adhesive tape visible N/A, Bulk Round side of TO92 and adhesive tape visible Round side of TO92 and adhesive tape visible Flat side of TO92 and adhesive tape visible PACKAGE DIMENSIONS TO–92 (TO–226AA) CASE 029–11 ISSUE AJ A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE http://onsemi.com 7 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– MCR22–6, MCR22–8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time) Email: [email protected] EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2745 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MCR22–6/D