RO-P-DS-3009 - - MAAPGM0018-DIE 2W Ku-Band Power Amplifier 12.0-15.5 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 12.0-15.5 GHz GaAs MMIC Amplifier 12.0-15.5 GHz Operation 2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Excellent Input and Output VSWR Self-Aligned MSAG® MESFET Process Primary Applications ♦ ♦ Point-to-Point Radio SatCom Description The MAAPGM0018-Die is a 3-stage 2 W power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction SelfAligned Gate (MSAG®) MESFET Process. This process features silicon nitride passivation and polyimide scratch protection. Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, VGG = -2V, Pin = 18 dBm Parameter Symbol Typical Units Bandwidth f 12.0-15.5 GHz Output Power POUT 33 dBm Power Added Efficiency PAE 25 % 1-dB Compression Point P1dB 32 dBm Small Signal Gain G 18 dB Input VSWR VSWR 1.5:1 Gate Current IGG <5 mA Drain Current IDD < 1.2 A 2nd Harmonic 2f -40 dBc 3rd Harmonic 3f -55 dBc 1. TB = MMIC Base Temperature RO-P-DS-3009 - - 2W Ku-Band Power Amplifier 2/6 MAAPGM0018-DIE Maximum Operating Conditions 1 Parameter Symbol Absolute Maximum Units Input Power PIN 23.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 900 mA PDISS 7.0 W Junction Temperature TJ 180 °C Storage Temperature TSTG -55 to +150 °C Quiescent DC Power Dissipated (No RF) 1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit Drain Voltage VDD 4.0 8.0 10.0 V Gate Voltage VGG -2.3 -2.0 -1.5 V Input Power PIN 21.0 dBm Junction Temperature Tj 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150°C —11.4 °C/W * VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8.0 V. 3. Adjust VGG to set IDQ, (approximately @ –2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn gate voltage off last. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3009 - - 2W Ku-Band Power Amplifier 3/6 MAAPGM0018-DIE 50 50 POUT PAE 40 40 30 30 20 20 10 10 0 0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 18 dBm. 50 50 POUT PAE 40 40 30 30 20 20 10 10 0 0 4 5 6 7 8 9 10 Drain Voltage (V) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 13 GHz. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3009 - - 2W Ku-Band Power Amplifier 4/6 MAAPGM0018-DIE 50 VDD = 4 VDD = 8 VDD = 6 40 30 20 10 0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage 30 6 GAIN VSWR 25 5 20 4 15 3 10 2 5 11.5 1 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 Frequency (GHz) Figure 4. Small Signal Gain and Input VSWR vs. Frequency at VDD = 8V. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3009 - - 2W Ku-Band Power Amplifier 5/6 MAAPGM0018-DIE Mechanical Information Chip Size: 4.404 x 3.380 x 0.075 mm VD3 4.404mm. VD3 OUT VGG 3.218mm. 1.690mm. 0.162mm. 4.252mm. 4.177mm. 2.576mm. VD1, 2 1.551mm. 0 VGG 0.226mm. 0.152mm. 0 4.177mm. VGG IN 1.690mm. VD1, 2 x 133 x 3 mils) 2.501mm. VGG 1.551mm. 0.226mm. 0.152mm. 3.380mm. 3.228mm. (173 Chip edge to bond pad dimensions are shown to the center of the bond Figure 5. Die Layout Bond Pad Dimensions Pad Size (µm) Size (mils) RF In and Out 100 x 200 4x8 DC Drain Supply Voltage VDD 200 x 150 8x6 DC Gate Supply Voltage VGG 150 x 150 6x6 Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3009 - - 2W Ku-Band Power Amplifier 6/6 MAAPGM0018-DIE 0.1 µF 0.1 µF 0.1 µF VDD 100 pF 100 pF VGG VD1, 2 100 pF VGG VD3 RFIN RFOUT OUT IN VD1, 2 VGG 100 pF VGG 100 pF VD3 VGG 100 pF VDD 35 Ω 0.1 µF 0.1 µF 0.1 µF Note: Indicated VGG pads represent the nominal bias configuration. Optionally, the VGG pads between VD 1, 2 and VD3 can be used if more convenient. Figure 6. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing. Note: Indicated VGG pads represent the nominal bias configuration. Optionally, the VGG pads between VD 1, 2 and VD3 can be used if more convenient. Assembly Instructions: Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information.