5W Ku-Band Power Amplifier 12.0-15.0 GHz MAAPGM0016-DIE Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ 12.0-15.0 GHz Operation 5 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG ® MESFET Process Description The MAAPGM0016-DIE is a 3-stage 5 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ ♦ ♦ Point-to-Point Radio SatCom DBS Electrical Characteristics: T B = 40°C1, Z0 = 50 Ω, VDD = 8V, IDQ = 2.4 A2, Pin = 21 dBm, RG=25 Ω Parameter Symbol Bandwidth Output Power POUT Units 12.0-15.0 GHz 37 dBm Power Added Efficiency PAE 24 % 1-dB Compression Point P1dB 36 dBm Small Signal Gain Gn 20 dB VSWR 3:1 Input VSWR 1. 2. f Typical Gate Current IGG <2 mA Drain Current IDD <3.5 A 2nd Harmonic 2f -40 dBc 3rd Harmonic 3f -75 dBc TB = MMIC Base Temperature Adjust VGG between –2.5 and –1.2V to achieve specified Idq. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 5W Ku-Band Power Amplifier 12.0-15.0 GHz MAAPGM0016-DIE Rev A Preliminary Datasheet Maximum Ratings 3 Parameter Symbol Absolute Maximum Units Input Power PIN 28.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 2.5 A Quiescent DC Power Dissipated (No RF) PDISS 20.3 W Junction Temperature TJ 170 °C Storage Temperature TSTG -55 to +150 °C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic 4. 5. Symbol Min Typ Max Unit Drain Voltage VDD 4.0 8.0 10.0 V Gate Voltage VGG -2.5 -2.0 -1.2 V Input Power PIN 6.0 25.0 dBm Thermal Resistance ΘJC 3.9 MMIC Base Temperature TB °C/W Note 5 °C Operation outside of these ranges may reduce product reliability. MMIC Base Temperature = 170°C — ΘJC* VDD * I DQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8.0 V. 3. Adjust VGG to set IDQ, (approximately @ –2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 5W Ku-Band Power Amplifier 12.0-15.0 GHz MAAPGM0016-DIE Rev A Preliminary Datasheet 50 50 50 50 40 40 40 30 30 30 20 20 10 10 PAE (%) POUT (dBm) 30 0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 10 0 4 5 6 7 8 9 10 Frequency (GHz) Drain Voltage (volts) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V. Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 13 GHz. 6 30 VDD = 4 VDD = 8 20 PAE 0 50 VDD = 6 VDD = 10 GAIN 40 25 30 20 4 20 15 3 10 10 2 0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 VSWR 5 11.5 12.0 12.5 13.0 13.5 14.0 14.5 Frequency (GHz) Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 8V. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 5 VSWR Gain (dB) P1dB (dBm) POUT 20 10 0 15.5 15.0 PAE (%) PAE POUT (dBm) POUT 40 15.0 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 1 15.5 5W Ku-Band Power Amplifier 12.0-15.0 GHz MAAPGM0016-DIE Rev A Preliminary Datasheet Mechanical Information Chip Size: 4.206 x 4.404 x 0.075 mm (166 x 173 x 3 mils) 4.206mm. 3.879mm. 1.556mm. 0.656mm. 0.152mm. 4 .4 04 m m . 4 .1 86 m m . VD2 OUT IN 2 .2 02 m m . VD1 VG G 4 .1 86 m m . VD2 VD1 VG G 0 .2 19 m m . 2 .2 02 m m . 0 .2 19 m m . 0 4.053mm. 3.879mm. 1.556mm. 0.656mm. 0 Figure 5. Die Layout Bond Pad Dimensions Pad Size (μm) Size (mils) RF In and Out 100 x 200 4x8 DC Drain Supply Voltage VD1 200 x 150 8x6 DC Drain Supply Voltage VD2 500 x 150 20 x 6 DC Gate Supply Voltage VGG 150 x 150 6x6 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 5W Ku-Band Power Amplifier 12.0-15.0 GHz MAAPGM0016-DIE Rev A Preliminary Datasheet Assembly and Bonding Diagram 0. 1 μF 0.1 μF 0.1 μF VDD 1 0 0 pF 10 0 p F 10 0 p F VD2 VD1 V GG R F O UT RF IN OUT IN V GG VD2 VD1 VGG 1 0 0 pF 10 0 p F 1 00 pF V DD 25 Ω 0. 1 μF 0.1 μ F 0. 1 μF Figure 6. Die Layout Assembly Instructions: Die attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 °C to less than 5 minutes. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.