ONSEMI MBRS540T3_05

MBRS540T3
Preferred Device
Surface Mount Schottky
Power Rectifier
The MBRS540T3 employs the Schottky Barrier principle in a large
area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes in
surface mount applications where compact size and weight are critical
to the system.
Features
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SCHOTTKY BARRIER
RECTIFIER
5.0 AMPERES, 40 VOLTS
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
Pb−Free Package is Available
SMC
CASE 403
PLASTIC
Mechanical Characteristics
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
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•
•
•
MARKING DIAGRAM
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Notch in Plastic Body Indicates Cathode Lead
ESD Rating: Machine Model, C (> 400 V)
Human Body Model, 3B (> 8000 V)
Device Meets MSL 1 Requirements
AYWW
B540G
G
B540
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
Average Rectified Forward Current
(At Rated VR, TC = 105°C)
IF(AV)
5
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave,
20 KHz, TC = 80°C)
IFRM
10
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
190
A
Storage Temperature Range
Tstg
−65 to +150
°C
TJ
−65 to +150
°C
dv/dt
10,000
V/ms
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated VR)
ORDERING INFORMATION
Device
MBRS540T3
MBRS540T3G
Package
Shipping†
SMC
2500/Tape & Reel
SMC
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 5
1
Publication Order Number:
MBRS540T3/D
MBRS540T3
THERMAL CHARACTERISTICS
Symbol
Characteristic
Value
Unit
°C/W
Thermal Resistance,
Junction−to−Lead (Note 2)
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJL
12
RqJA
111
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 5.0 A, TC= 25°C)
VF
0.50
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TC = 25°C)
(Rated dc Voltage, TC = 100°C)
iR
0.3
15
mA
2. Rating applies when surface mounted on the minimum pad size recommended.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
IF, INSTANTANEOUS FORWARD
CURRENT (A)
1
10
TJ = 125°C
0.1
0.10
TJ = 100°C
0.20
TJ = 25°C
0.30
TJ = −55°C
0.40
0.50
TJ = 125°C
0.60
TJ = 100°C
TJ = −55°C
TJ = 25°C
0.20
0.30
0.40
0.50
0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
100E−3
0.70
100E−3
TJ = 125°C
10E−3
IR, REVERSE CURRENT (A)
1
0.1
0.10
1E−3
TJ = 100°C
100E−6
10E−6
TJ = 25°C
1E−6
IR, MAXIMUM REVERSE CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
10
TJ = 125°C
10E−3
TJ = 100°C
1E−3
TJ = 25°C
100E−6
100E−9
TJ = −55°C
10E−9
1E−9
100E−12
0
10
20
30
VR, REVERSE VOLTAGE (V)
40
TJ = −55°C
10E−6
1E−6
0
Figure 3. Typical Reverse Current
10
20
30
VR, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
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2
40
MBRS540T3
TYPICAL CHARACTERISTICS
IO, AVERAGE FORWARD
CURRENT (A)
8
PFO, AVERAGE POWER DISSIPATION (W)
9
freq = 20 kHz
dc
7
6
5
4
3
2
1
SQUARE WAVE
Ipk/IO = p
Ipk/IO = 5
Ipk/IO = 10
Ipk/IO = 20
0
25
45
65
85
105
125
145
TL, LEAD TEMPERATURE (°C)
4.5
4
SQUARE
WAVE
3.5
3
2.5
2
Ipk/IO = p
1.5
Ipk/IO = 5
1
Ipk/IO = 10
0.5
0
Ipk/IO = 20
0
TJ, DERATED OPERATING TEMPERATURE (°C)
TJ = 25 °C
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (V)
2
3
4
5
6
7
8
9
Figure 6. Forward Power Dissipation
C, CAPACITANCE (pF)
100
1
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
1000
dc
35
40
125
RqJA = 12 °C/W
115
105
RqJA = 47 °C/W
95
RqJA = 81 °C/W
85
RqJA = 111 °C/W
75
RqJA = 136 °C/W
65
55
0
Figure 7. Capacitance
5
35
10
15
20
25
30
VR, DC REVERSE VOLTAGE (V)
40
Figure 8. Typical Operating Temperature
Derating
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3
45
MBRS540T3
r(t), TRANSIENT THERMAL RESPONSE (C/W)
1000
100 D = 0.5
10
0.2
0.1
P(pk)
0.05
0.02
1 0.01
Test Type > min pad 1 oz
RqJC = min pad 1 oz C/W
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
r(t), TRANSIENT THERMAL RESPONSE (C/W)
Figure 9. Thermal Response − MBRS540T3 on min pad
100
D = 0.5
0.2
10
0.1
P(pk)
0.05
1
0.02
0.01
0.1
0.00001
Test Type > min pad 1 oz
RqJC = min pad 1 oz C/W
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.0001
0.001
0.1
0.01
1
t, TIME (s)
Figure 10. Thermal Response − MBRS540T3 on 1” pad
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4
10
100
1000
MBRS540T3
PACKAGE DIMENSIONS
SMC
CASE 403−03
ISSUE E
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
4. 403−01 THRU −02 OBSOLETE, NEW STANDARD 403−03.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
MIN
1.90
0.05
2.92
0.15
5.59
6.60
7.75
0.76
MILLIMETERS
NOM
MAX
2.13
2.41
0.10
0.15
3.00
3.07
0.23
0.30
5.84
6.10
6.86
7.11
7.94
8.13
1.02
1.27
0.51 REF
MIN
0.075
0.002
0.115
0.006
0.220
0.260
0.305
0.030
INCHES
NOM
0.084
0.004
0.118
0.009
0.230
0.270
0.313
0.040
0.020 REF
MAX
0.095
0.006
0.121
0.012
0.240
0.280
0.320
0.050
A
L
L1
c
A1
SOLDERING FOOTPRINT*
4.343
0.171
3.810
0.150
2.794
0.110
SCALE 4:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
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MBRS540T3/D