APTM20AM06S Phase leg Series & parallel diodes MOSFET Power Module VDSS = 200V RDSon = 6mW max @ Tj = 25°C ID = 300A @ Tc = 25°C Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies Features · · · G1 VBUS 0/VBUS OUT S1 · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits · · · · S2 G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 300 225 1200 ±30 6 1250 24 30 1300 Unit V A V mW W A May, 2004 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM20AM06S – Rev 1 Symbol VDSS APTM20AM06S All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 1.5mA Min 200 VGS = 0V,VDS = 200V Tj = 25°C VGS = 0V,VDS = 160V Tj = 125°C VGS = 10V, ID = 150A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V Typ 3 Max 500 3 6 5 ±500 Unit V µA mA mW V nA Max Unit Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 100V ID = 300A Typ 18.5 6.03 0.58 325 nF nC 144 156 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A RG = 0.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, RG = 0.8Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, RG = 0.8Ω 28 56 81 ns 99 1543 µJ 1517 2027 µJ 1770 u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 120A VR = 133V di/dt = 400A/µs Min Tj = 125°C Typ 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 Tc = 85°C APT website – http://www.advancedpower.com Max Unit A 1.15 V ns May, 2004 VF Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A nC 2-6 APTM20AM06S – Rev 1 Symbol Characteristic Maximum Average Forward Current IF(AV) APTM20AM06S Parallel diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 130V di/dt = 400A/µs Min Tj = 125°C Typ 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 Tc = 85°C Max Unit A 1.15 V ns nC Thermal and package characteristics Symbol Characteristic Min Transistor Diode serie Diode parallel RthJC Junction to Case VISOL TJ TSTG TC Operating junction temperature range Storage Temperature Range Operating Case Temperature RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.10 0.46 0.46 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3-6 APTM20AM06S – Rev 1 May, 2004 Package outline APTM20AM06S Typical Performance Curve Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 720 800 VGS=15 & 600 ID, Drain Current (A) 8V 400 7V 200 6V 0 600 480 360 T J=125°C 240 TJ=25°C 120 TJ=-55°C 0 0 2.5 5 7.5 10 12.5 15 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.2 320 Normalized to VGS=10V @ 44.5A 1.15 ID, DC Drain Current (A) 1.1 VGS=10V 1.05 1 0.95 VGS=20V 0.9 0 100 200 300 400 500 ID, Drain Current (A) 280 240 200 160 120 80 40 0 600 25 50 75 100 125 TC, Case Temperature (°C) 150 May, 2004 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 4-6 APTM20AM06S – Rev 1 ID, Drain Current (A) Transfert Characteristics 840 1000 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.1 1.0 0.9 0.8 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 limited by RDSon 100µs 100 1ms 10ms 10 0.7 DC line Single pulse TJ=150°C 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=300A 10 TJ=25°C V =100V DS 8 VDS=160V 6 4 2 0 0 60 120 180 240 300 360 Gate Charge (nC) May, 2004 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID= 150A 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 ON resistance vs Temperature 2.5 APT website – http://www.advancedpower.com 5-6 APTM20AM06S – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM20AM06S APTM20AM06S Rise and Fall times vs Current 90 160 80 140 td(off) 70 60 50 40 VDS=133V RG=0.8Ω TJ=125°C L=100µH 30 80 tr 60 20 10 100 150 200 250 300 350 400 450 500 0 100 150 200 250 300 350 400 450 500 ID, Drain Current (A) ID, Drain Current (A) Switching Energy vs Gate Resistance 6000 Switching Energy vs Current 4000 3000 2500 Eon VDS=133V RG=0.8Ω TJ=125°C L=100µH Eoff 2000 1500 1000 500 Switching Energy (µJ) 3500 Eon and Eoff (µJ) 100 0 100 150 200 250 300 350 400 450 500 VDS=133V ID=300A TJ=125°C L=100µH 5000 4000 3000 2000 1000 0 2 300 250 200 150 100 50 0 60 90 120 150 180 210 240 270 ID, Drain Current (A) 6 8 10 Source to Drain Diode Forward Voltage 10000 1000 TJ=150°C TJ=25°C 100 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTM20AM06S – Rev 1 May, 2004 30 IDR, Reverse Drain Current (A) VDS=133V D=50% RG=0.8Ω TJ=125°C 350 4 Gate Resistance (Ohms) Operating Frequency vs Drain Current 400 Eoff Eon ID, Drain Current (A) Frequency (kHz) tf 40 td(on) 20 VDS=133V RG=0.8Ω TJ=125°C L=100µH 120 tr and tf (ns) td(on) and td(off) (ns) Delay Times vs Current