APTM20DAM08TG Boost chopper MOSFET Power Module VDSS = 200V RDSon = 8mΩ typ @ Tj = 25°C ID = 208A @ Tc = 25°C Application VBUS NTC2 VBUS SENSE • • • CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features • Q2 G2 • • 0/VBU S NTC1 • • G2 S2 VBUS VBUS SENSE 0/VBUS OUT OUT S2 NTC2 G2 NTC1 Benefits • • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc= 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 208 155 832 ±30 10 781 100 50 3000 Unit V A November, 2005 S2 Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM20DAM08TG – Rev 3 OUT APTM20DAM08TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Tj = 25°C VGS = 0V,VDS = 160V T j = 125°C VGS = 10V, ID = 104A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 100V ID = 208A IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions VR=200V IF = 180A IF = 360A IF = 180A IF = 180A VR = 133V di/dt = 600A/µs Unit Max Unit µA mΩ V nA nF nC 134 32 64 116 1698 1872 µJ 1972 Typ Max 500 750 Tj = 125°C 180 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 180 Tj = 125°C 750 APT website – http://www.advancedpower.com µJ 1858 Min 200 Tj = 25°C Tj = 125°C Tc = 80°C ns 88 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5Ω Maximum Reverse Leakage Current Typ 14.4 4.66 0.29 280 Max 150 750 10 5 ±150 106 Chopper diode ratings and characteristics IRM 8 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ 3 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 208A R G = 2.5Ω Rise Time Tf Min VGS = 0V,VDS = 200V Unit V µA A 1.15 V November, 2005 IDSS Characteristic ns nC 2–6 APTM20DAM08TG – Rev 3 Symbol APTM20DAM08TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Diode To Heatsink M5 Max 0.16 0.32 2500 -40 -40 -40 1.5 RT = Min R 25 °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Unit Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT website – http://www.advancedpower.com 3–6 APTM20DAM08TG – Rev 3 November, 2005 SP4 Package outline (dimensions in mm) APTM20DAM08TG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 Single Pulse 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1400 Transfert Characteristics 600 1000 9V 800 8.5V 600 8V 7.5V 400 7V 200 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 500 400 300 200 TJ=25°C 100 T J=125°C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 104A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 250 RDS(on) vs Drain Current ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.9 0.8 200 150 100 50 0 0 50 100 150 200 ID, Drain Current (A) 250 300 25 50 75 100 125 November, 2005 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4–6 APTM20DAM08TG – Rev 3 ID, Drain Current (A) 10V ID, Drain Current (A) VGS=15V 1200 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 104A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 0.6 limited by RDSon 100µs 100 1ms 10ms 10 100ms Single pulse TJ=150°C 1 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=208A V DS=40V 12 TJ =25°C VDS=100V 10 8 VDS=160V 6 4 2 0 0 40 APT website – http://www.advancedpower.com 80 120 160 200 240 280 320 November, 2005 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 Gate Charge (nC) 5–6 APTM20DAM08TG – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM20DAM08TG APTM20DAM08TG Delay Times vs Current Rise and Fall times vs Current 160 120 60 120 t d(on) 40 tr and tf (ns) 100 80 tr 60 40 20 0 0 0 50 100 150 200 250 300 350 I D, Drain Current (A) 0 50 6 Eoff Eon 2 1 Switching Energy (mJ) VDS=133V RG=2.5Ω TJ=125°C L=100µH 3 VDS=133V ID=208A TJ=125°C L=100µH 5 4 3 Eon 2 1 50 100 150 200 250 300 350 0 5 I D, Drain Current (A) Operating Frequency vs Drain Current 300 250 ZVS 200 50 V DS=133V D=50% R G=2.5Ω T J=125°C T C=75°C ZCS Hard switching 0 25 50 75 100 125 150 175 200 I D, Drain Current (A) 15 20 25 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 350 10 Gate Resistance (Ohms) 1000 TJ =150°C 100 TJ =25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 November, 2005 0 100 Eoff Eoff 0 150 100 150 200 250 300 350 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 4 Frequency (kHz) tf VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM20DAM08TG – Rev 3 t d(on) and td(off) (ns) t d(off) VDS=133V RG=2.5Ω T J=125°C L=100µH 80 20 Eon and Eoff (mJ) V DS=133V R G=2.5Ω T J=125°C L=100µH 140 100