DC COMPONENTS CO., LTD. LB123D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-126ML Pinning .163(4.12) .153(3.87) 1 = Emitter 2 = Collector 3 = Base .060(1.52) .050(1.27) .148(3.75) .138(3.50) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 8 V Collector Current(DC) IC 1 A Collector Current(Pluse) IC 2 A o Total Power Dissipation(TC=25 C) PD 30 Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .146(3.70) .136(3.44) .044(1.12) .034(0.87) .123(3.12) .113(2.87) .300(7.62) .290(7.37) 1 2 3 .591(15.0) .551(14.0) .084(2.12) .074(1.87) .084(2.14) .074(1.88) .056(1.42) .046(1.17) .033(0.84) .027(0.68) .027(0.69) .017(0.43) .180 Typ (4.56) W .090 Typ (2.28) C C Dimensions in inches and (millimeters) Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 600 - - V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 400 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 8 - - V IE=1mA, IC=0 ICBO - - 10 µA VCB=600V, IE=0 Collector Cutoff Current IEBO - - 10 µA VBE=9V, IC=0 VCE(sat)1 - - 0.8 V IC=0.1A, IB=10mA VCE(sat)2 - - 0.9 V IC=0.3A, IB=30mA Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) VBE(sat)1 - - 1.2 V IC=0.1A, IB=10mA VBE(sat)2 - - 1.8 V IC=0.3A, IB=30mA (1) DC Current Gain (1)Pulse Test: Pulse Width Test Conditions hFE1 10 - 50 - IC=0.3A, VCE=5V hFE2 10 - - - IC=0.5A, VCE=5V hFE3 6 - - - IC=1A, VCE=5V 380µs, Duty Cycle 2% Classification of hFE1 Rank B1 B2 Range 10~17 13~22 B3 18~27 B4 B5 B6 B7 B8 23~32 28~37 33~42 38~47 43~50